Electro-Discharge-Machine Machining Condition Optimization Method
    1.
    发明申请
    Electro-Discharge-Machine Machining Condition Optimization Method 有权
    放电机加工条件优化方法

    公开(公告)号:US20080245780A1

    公开(公告)日:2008-10-09

    申请号:US10575108

    申请日:2005-01-24

    IPC分类号: B23K9/10

    CPC分类号: B23H1/022 B23H7/16 B23H7/20

    摘要: A discharge voltage detecting unit 7 detects a discharge voltage and determines an average discharge voltage in a specified period of time. An optimum machining condition computing unit 8 determines a discharge current that makes an average discharge voltage detected by the discharge voltage detecting unit equal to an average discharge voltage when a new machining liquid is used and determines discharging time, non-operating time, and a servo reference voltage depending on the determined discharge current from the relational equations with a discharge current, discharging time, non-operating time, and a servo reference voltage that are stored in the machining condition data base storing unit 9 and establish optimum machining conditions and controls a servo 4 and a machining electrode 5 under the optimum machining conditions by a servo control unit 6 at the time of machining.

    摘要翻译: 放电电压检测单元7检测放电电压并且在指定的时间段内确定平均放电电压。 最佳加工条件计算单元8确定当使用新的加工液体时使由放电电压检测单元检测的平均放电电压等于平均放电电压的放电电流并确定放电时间,非工作时间和伺服 参考电压取决于来自具有放电电流,放电时间,非工作时间以及存储在加工条件数据库存储单元9中的伺服参考电压的关系式的确定的放电电流,并建立最佳加工条件并控制 伺服机构4和加工电极5,在最佳加工条件下由伺服控制单元6进行加工。

    Electric discharge machine and method for optimizing machining conditions of the electric discharge machine
    2.
    发明授权

    公开(公告)号:US07652222B2

    公开(公告)日:2010-01-26

    申请号:US10575108

    申请日:2005-01-24

    IPC分类号: B23H7/20

    CPC分类号: B23H1/022 B23H7/16 B23H7/20

    摘要: A discharge voltage detecting unit of an electric discharge machine detects a discharge voltage and determines an average discharge voltage in a specified period of time. An optimum machining condition computing unit determines a discharge current that makes an average discharge voltage detected by a discharge voltage detecting unit equal to an average discharge voltage when a new machining liquid is used. The optimum machining condition computing unit determines an optimal discharging time, an optimal non-operating time, and an optimal servo reference voltage from relational equations depending on the determined discharge current. A machining condition data base storing unit stores the discharge current, the discharging time, the non-operating time, and the servo reference voltage. A servo control unit establishes the optimum machining conditions at the time of machining.

    摘要翻译: 放电机的放电电压检测部检测放电电压,并在规定的时间内确定平均放电电压。 最佳加工条件计算单元确定当使用新的加工液体时使由放电电压检测单元检测到的平均放电电压等于平均放电电压的放电电流。 最佳加工条件计算单元根据所确定的放电电流从关系方程式确定最佳放电时间,最佳非工作时间和最佳伺服参考电压。 加工条件数据库存储单元存储放电电流,放电时间,非工作时间和伺服参考电压。 伺服控制单元在加工时建立最佳加工条件。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
    制造半导体器件的方法

    公开(公告)号:US20080227292A1

    公开(公告)日:2008-09-18

    申请号:US12043165

    申请日:2008-03-06

    申请人: Shinsuke Miki

    发明人: Shinsuke Miki

    IPC分类号: H01L21/768

    CPC分类号: B81C1/00849

    摘要: A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alcohol vapor, heating the semiconductor wafer after drying the semiconductor wafer, and performing an RA cleaning on the semiconductor wafer after heating the semiconductor wafer by using a fuming nitric acid.

    摘要翻译: 一种制造半导体器件的方法包括:制备半导体晶片,在半导体晶片上形成半导体功能元件,通过使用异丙醇蒸气在形成半导体功能元件之后干燥半导体晶片,在干燥半导体晶片之后加热半导体晶片, 并且在通过使用发烟硝酸加热半导体晶片之后,在半导体晶片上进行RA清洗。

    Acceleration sensor
    4.
    发明申请
    Acceleration sensor 审中-公开
    加速度传感器

    公开(公告)号:US20090025478A1

    公开(公告)日:2009-01-29

    申请号:US12153500

    申请日:2008-05-20

    申请人: Shinsuke Miki

    发明人: Shinsuke Miki

    IPC分类号: G01P15/12

    摘要: The present invention provides an acceleration sensor that improves endurance by avoiding damage to stopper portions. When a downward vibration is applied to a weight member and the weight member displaces downward, a bottom face of the weight member abuts a bottom plate, and the weight member stops and downward displacement is obstructed. Furthermore, when the weight member displaces upward, peripheral weight portions abut stopper portions, and the weight member stops and upward displacement is obstructed. Because displacement of the weight member is obstructed by abutting the stopper portions, if the strength of the stopper portions is low, the stopper portions may be damaged. However, by providing reinforcement portions which reinforce the stopper portions, damage to the stopper portions may be prevented, and endurance of the acceleration sensor is improved.

    摘要翻译: 本发明提供一种加速度传感器,其通过避免对止动部的损坏来提高耐久性。 当向配重构件施加向下的振动并且配重构件向下移动时,配重构件的底面抵靠底板,并且配重构件停止并且向下的位移被阻挡。 此外,当配重构件向上移动时,周向配重部分邻接止动部分,并且配重构件停止并且向上移位被阻挡。 由于通过抵靠止动部而阻碍配重构件的位移,所以如果止动部的强度低,则止动部可能被损坏。 然而,通过设置加固止动部的加强部,可以防止对止动部的损伤,提高加速度传感器的耐久性。

    Method for manufacturing semiconductor device
    5.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07790625B2

    公开(公告)日:2010-09-07

    申请号:US12043165

    申请日:2008-03-06

    申请人: Shinsuke Miki

    发明人: Shinsuke Miki

    IPC分类号: H01L21/302

    CPC分类号: B81C1/00849

    摘要: A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alcohol vapor, heating the semiconductor wafer after drying the semiconductor wafer, and performing a cleaning on the semiconductor wafer after heating the semiconductor wafer by using a fuming nitric acid.

    摘要翻译: 一种制造半导体器件的方法包括:制备半导体晶片,在半导体晶片上形成半导体功能元件,通过使用异丙醇蒸气在形成半导体功能元件之后干燥半导体晶片,在干燥半导体晶片之后加热半导体晶片, 并且在通过使用发烟硝酸加热半导体晶片之后对半导体晶片进行清洁。