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公开(公告)号：US20050175927A1
公开(公告)日：2005-08-11
申请号：US10520461
申请日：2003-07-11
IPC分类号： G03F7/11 , C08K5/00 , C08L61/24 , C08L101/00 , G03F7/09 , H01L21/027 , G03F7/00 , G03F7/004
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
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2.发明申请公开(公告)号：US20060216652A1
公开(公告)日：2006-09-28
申请号：US11444392
申请日：2006-06-01
IPC分类号： G03C5/00
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
摘要翻译： 一种用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，其包含含有三聚氰酸或其衍生物的树脂或含有衍生自氰尿酸或其衍生物的结构单元的树脂 。 结构单元优选由式（1）表示：并且可以包含在树脂的主链或侧链或主链和侧链中。 由组合物获得的用于光刻的抗反射涂层具有高的反射降低效果，并且不会引起与抗蚀剂层的混合，以产生优异的抗蚀剂图案。 与抗蚀剂相比，它在干蚀刻中具有更高的选择性。
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公开(公告)号：US06927266B2
公开(公告)日：2005-08-09
申请号：US10078108
申请日：2002-02-20
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , C08F122/40
摘要： The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.
摘要翻译： 本发明涉及具有该树脂的底部抗反射涂层形成组合物，该树脂具有包含马来酰亚胺或马来酰亚胺衍生物，用于制备半导体器件的光刻工艺。 该树脂包含主链或侧链中的马来酰亚胺或其衍生物，其重均分子量为700-1000000。 与抗蚀剂相比，本发明提供了用于光刻的底部抗反射涂层，其具有高抗反射效果，不与抗蚀剂层混合，优异的抗蚀剂图案和大的干蚀刻速率。
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公开(公告)号：US07947424B2
公开(公告)日：2011-05-24
申请号：US10520461
申请日：2003-07-11
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
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5.发明授权公开(公告)号：US07326509B2
公开(公告)日：2008-02-05
申请号：US10486891
申请日：2002-08-13
摘要： There is provided a composition for forming anti-reflective coating for use in a lithography which has a high effect of inhibiting reflected light, causes no intermixing with resist layers, affords excellent resist patterns, has a higher dry etching rate compared with the resist, and has broader margin of depth of focus and higher resolution than the prior compositions.Concretely, the composition is one for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, and comprises a resin containing a lactone structure. The resin is one which a γ-lactone structure or a δ-lactone structure is introduced to a main chain thereof or a side chain bonded to the main chain.
摘要翻译： 提供了一种用于形成抗蚀涂层的组合物，其具有抑制反射光的高效果，不会与抗蚀剂层混合，提供优异的抗蚀剂图案，与抗蚀剂相比具有更高的干蚀刻速率，以及 具有比现有组合物更宽的焦点深度和更高的分辨率。 具体地，该组合物是用于形成用于制造半导体器件的平版印刷工艺中的抗反射涂层的组合物，并且包含含有内酯结构的树脂。 树脂是将γ-内酯结构或δ-内酯结构引入其主链或与主链结合的侧链的树脂。
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公开(公告)号：US07425403B2
公开(公告)日：2008-09-16
申请号：US11444392
申请日：2006-06-01
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
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7.发明授权公开(公告)号：US07332266B2
公开(公告)日：2008-02-19
申请号：US10472695
申请日：2002-04-10
IPC分类号： G03F7/23
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
摘要翻译： 一种用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，其包含含有三聚氰酸或其衍生物的树脂或含有衍生自氰尿酸或其衍生物的结构单元的树脂 。 结构单元优选由式（1）表示：并且可以包含在树脂的主链或侧链或主链和侧链中。 由组合物获得的用于光刻的抗反射涂层具有高的反射降低效果，并且不会引起与抗蚀剂层的混合，以产生优异的抗蚀剂图案。 与抗蚀剂相比，它在干蚀刻中具有更高的选择性。
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8.发明授权公开(公告)号：US07425399B2
公开(公告)日：2008-09-16
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
IPC分类号： G03C1/825 , C07D251/30 , C07D251/72
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
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公开(公告)号：US20080206680A1
公开(公告)日：2008-08-28
申请号：US11979448
申请日：2007-11-02
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
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公开(公告)号：US20060290429A1
公开(公告)日：2006-12-28
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Kanayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Kanayama , Yasuo Kawamura
IPC分类号： H03F1/14
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
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