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公开(公告)号：US20050175927A1
公开(公告)日：2005-08-11
申请号：US10520461
申请日：2003-07-11
IPC分类号： G03F7/11 , C08K5/00 , C08L61/24 , C08L101/00 , G03F7/09 , H01L21/027 , G03F7/00 , G03F7/004
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
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公开(公告)号：US07947424B2
公开(公告)日：2011-05-24
申请号：US10520461
申请日：2003-07-11
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
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3.发明申请公开(公告)号：US20060216652A1
公开(公告)日：2006-09-28
申请号：US11444392
申请日：2006-06-01
IPC分类号： G03C5/00
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
摘要翻译： 一种用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，其包含含有三聚氰酸或其衍生物的树脂或含有衍生自氰尿酸或其衍生物的结构单元的树脂 。 结构单元优选由式（1）表示：并且可以包含在树脂的主链或侧链或主链和侧链中。 由组合物获得的用于光刻的抗反射涂层具有高的反射降低效果，并且不会引起与抗蚀剂层的混合，以产生优异的抗蚀剂图案。 与抗蚀剂相比，它在干蚀刻中具有更高的选择性。
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公开(公告)号：US06927266B2
公开(公告)日：2005-08-09
申请号：US10078108
申请日：2002-02-20
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , C08F122/40
摘要： The present invention relates to a bottom anti-reflective coat forming composition having the resin with the structural unit comprising maleimide or maleimide derivative for the lithography process in the preparation of semiconductor device. The resin comprises maleimide or derivative thereof in the principal chain or the side chain and its weight-average molecular weight is 700-1000000. The invention offers the bottom anti-reflective coating for lithography showing high anti-reflective effect, no intermixing with resist layer, excellent resist pattern, and large dry etching rate in comparison to resist.
摘要翻译： 本发明涉及具有该树脂的底部抗反射涂层形成组合物，该树脂具有包含马来酰亚胺或马来酰亚胺衍生物，用于制备半导体器件的光刻工艺。 该树脂包含主链或侧链中的马来酰亚胺或其衍生物，其重均分子量为700-1000000。 与抗蚀剂相比，本发明提供了用于光刻的底部抗反射涂层，其具有高抗反射效果，不与抗蚀剂层混合，优异的抗蚀剂图案和大的干蚀刻速率。
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5.发明授权公开(公告)号：US07326509B2
公开(公告)日：2008-02-05
申请号：US10486891
申请日：2002-08-13
摘要： There is provided a composition for forming anti-reflective coating for use in a lithography which has a high effect of inhibiting reflected light, causes no intermixing with resist layers, affords excellent resist patterns, has a higher dry etching rate compared with the resist, and has broader margin of depth of focus and higher resolution than the prior compositions.Concretely, the composition is one for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, and comprises a resin containing a lactone structure. The resin is one which a γ-lactone structure or a δ-lactone structure is introduced to a main chain thereof or a side chain bonded to the main chain.
摘要翻译： 提供了一种用于形成抗蚀涂层的组合物，其具有抑制反射光的高效果，不会与抗蚀剂层混合，提供优异的抗蚀剂图案，与抗蚀剂相比具有更高的干蚀刻速率，以及 具有比现有组合物更宽的焦点深度和更高的分辨率。 具体地，该组合物是用于形成用于制造半导体器件的平版印刷工艺中的抗反射涂层的组合物，并且包含含有内酯结构的树脂。 树脂是将γ-内酯结构或δ-内酯结构引入其主链或与主链结合的侧链的树脂。
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公开(公告)号：US07425403B2
公开(公告)日：2008-09-16
申请号：US11444392
申请日：2006-06-01
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
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7.发明授权公开(公告)号：US07332266B2
公开(公告)日：2008-02-19
申请号：US10472695
申请日：2002-04-10
IPC分类号： G03F7/23
CPC分类号： H01L21/0276 , C08G18/791 , C08G73/0655 , C09D179/04 , G03F7/091
摘要： A composition for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device, comprising as a component a resin containing cyanuric acid or a derivative thereof, or a resin containing a structural unit derived from cyanuric acid or a derivative thereof. The structural unit is preferably represented by formula (1): and can be contained in a main chain or a side chain, or both main chain and side chain of a resin. The anti-reflective coating for lithography obtained from the composition has a high reflection reducing effect and does not cause intermixing with a resist layer to give an excellent resist pattern. It has a higher selectivity in dry-etching compared with the resists.
摘要翻译： 一种用于制造半导体器件的光刻工艺中用于形成抗反射涂层的组合物，其包含含有三聚氰酸或其衍生物的树脂或含有衍生自氰尿酸或其衍生物的结构单元的树脂 。 结构单元优选由式（1）表示：并且可以包含在树脂的主链或侧链或主链和侧链中。 由组合物获得的用于光刻的抗反射涂层具有高的反射降低效果，并且不会引起与抗蚀剂层的混合，以产生优异的抗蚀剂图案。 与抗蚀剂相比，它在干蚀刻中具有更高的选择性。
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公开(公告)号：US07847003B2
公开(公告)日：2010-12-07
申请号：US10565977
申请日：2004-07-28
申请人： Shinsuke Tsuji , Yosuke Iinuma , Shinya Arase
发明人： Shinsuke Tsuji , Yosuke Iinuma , Shinya Arase
CPC分类号： G03F7/0233 , G03F7/022 , G03F7/0226 , G03F7/038
摘要： The present invention provides a positive photosensitive resin composition which can form a cured film excellent in process resistance such as heat resistance, solvent resistance or long-time baking resistance and transparency, and which is excellent in photosensitive properties such as resolution and sensitivity, and which has high storage stability and a wide process margin. Further, the present invention provides a positive photosensitive resin composition having such high reliability that no deterioration of electrical characteristics will be led in its application for liquid crystal display devices.A positive photosensitive resin composition characterized by comprising an alkali-soluble resin which is a copolymer essentially comprising an unsaturated carboxylic acid derivative and an N-substituted maleimide and which has a number average molecular weight of from 2,000 to 20,000, a 1,2-quinone diazide compound represented by the formula (1): (wherein each of D independently is a hydrogen atom or an organic group having a 1,2-quinone diazide group, R1 is a tetravalent organic group, provided that at least one of D is an organic group having a 1,2-quinone diazide group), and from 5 to 50 parts by weight, per the alkali-soluble resin, of a crosslinking compound represented by the formula (2): (wherein n is an integer of from 2 to 10, m is an integer of from 0 to 4, and R2 is a n-valent organic group).
摘要翻译： 本发明提供一种正型感光性树脂组合物，其可以形成耐热性，耐溶剂性，耐久耐久性和透明性等耐加工性优异的固化膜，并且其分辨率和灵敏度等感光性能优异， 具有高储存稳定性和广泛的加工余量。 此外，本发明提供了一种具有高可靠性的正型感光性树脂组合物，其在液晶显示装置的应用中不会引起电特性的劣化。 一种正型感光性树脂组合物，其特征在于，含有基本上含有不饱和羧酸衍生物和N-取代马来酰亚胺并且数均分子量为2,000〜20,000的共聚物的碱溶性树脂，1,2-醌 由式（1）表示的重氮化合物：其中D各自独立地为氢原子或具有1,2-醌二叠氮基的有机基团，R 1为四价有机基团，条件是D为至少一个为 具有1,2-醌二叠氮基的有机基团）和5至50重量份的碱溶性树脂，由式（2）表示的交联化合物：其中n为2的整数 至10，m为0〜4的整数，R2为n价的有机基团）。
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公开(公告)号：US07361718B2
公开(公告)日：2008-04-22
申请号：US10540389
申请日：2003-12-25
申请人： Satoshi Takei , Kazuhisa Ishii , Shinya Arase
发明人： Satoshi Takei , Kazuhisa Ishii , Shinya Arase
IPC分类号： C08F212/02 , C08F20/06
CPC分类号： H01L21/02118 , G03F7/094 , G03F7/11 , H01L21/0274 , H01L21/31058 , H01L21/31133 , H01L21/31144 , H01L21/312 , H01L21/76224 , H01L21/76808
摘要： There is provided a gap fill material forming composition for lithography that is used in dual damascene process and contributes toward an improvement in production efficiency. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the substrate by use of lithography process, and that the composition is coated on the substrate prior to coating of the photoresist, and comprises a polymer having a hydroxy group or a carboxy group and a crosslinking agent. The gap fill material layer obtained from the gap fill material forming composition can be etched back with an alkaline aqueous solution.
摘要翻译： 提供了用于光刻的间隙填充材料形成组合物，其用于双镶嵌工艺，并有助于提高生产效率。 具体地说，它是间隙填充材料形成组合物，其特征在于该组合物用于制造半导体器件，方法包括在具有高度/直径为1或更大的长宽比的孔的基底上涂覆光致抗蚀剂，并且转移 通过使用平版印刷方法将图像转印到基板上，并且在涂覆光致抗蚀剂之前将组合物涂覆在基材上，并且包含具有羟基或羧基的聚合物和交联剂。 从间隙填充材料形成组合物获得的间隙填充材料层可以用碱性水溶液回蚀。
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公开(公告)号：US08766158B2
公开(公告)日：2014-07-01
申请号：US13574897
申请日：2011-01-20
申请人： Shinya Arase , Takahiro Sakaguchi
发明人： Shinya Arase , Takahiro Sakaguchi
CPC分类号： G02B3/0012 , G02B3/0056 , H01L27/14627 , H01L27/14685
摘要： A production method of a solid-state imaging device in which microlenses are arranged adjacent to each other on a substrate, includes: a first process of forming first microlenses on a surface of the substrate leaving space therebetween for providing second microlenses; and a second process of applying an overcoating material onto the surface of the substrate on which the first microlenses are formed, drying the overcoating material, exposing the overcoating material to light using a gray scale mask, and developing the exposed overcoating material, so as to form second microlenses in the space between the first microlenses adjacent to each other.
摘要翻译： 其中微透镜在衬底上彼此相邻布置的固态成像器件的制造方法包括：在衬底的表面上形成第一微透镜并在其间留出空间以提供第二微透镜的第一工艺; 以及将外涂层材料施加到其上形成有第一微透镜的基板的表面上的第二过程，干燥外涂层材料，使用灰度掩模将外涂层材料暴露于光，并显影曝光的外涂层材料，以便 在彼此相邻的第一微透镜之间的空间中形成第二微透镜。
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