公开(公告)号：US20090179281A1

公开(公告)日：2009-07-16

申请号：US12322604

申请日：2009-02-04

申请人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chungxiang Zhu ,  Dim-Lee Kwong

发明人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chungxiang Zhu ,  Dim-Lee Kwong

IPC分类号： H01L29/78

CPC分类号： H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

摘要： An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.

摘要翻译： 描述了使用镱硅化物（YbSi2-x）作为源极和漏极的N型肖特基势垒源极/漏极晶体管（N-SSDT）。 该结构包括合适的覆盖层堆叠。

公开(公告)号：US20090163005A1

公开(公告)日：2009-06-25

申请号：US12322932

申请日：2009-02-09

申请人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

发明人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC分类号： H01L21/28

CPC分类号： H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

摘要翻译： 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US07504328B2

公开(公告)日：2009-03-17

申请号：US11126031

申请日：2005-05-10

申请人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

发明人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC分类号： H01L21/441

CPC分类号： H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

摘要翻译： 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US07002175B1

公开(公告)日：2006-02-21

申请号：US10961355

申请日：2004-10-08

申请人： Jagar Singh ,  Yong Tian Hou ,  Ming Fu Li

发明人： Jagar Singh ,  Yong Tian Hou ,  Ming Fu Li

IPC分类号： H01L29/06

CPC分类号： H01L29/882 ,  B82Y10/00 ,  H01L29/66219

摘要： A double barrier resonant tunneling diode (RTD) is formed and integrated with a level of CMOS/BJT/SiGe devices and circuits through processes such as metal-to-metal thermocompressional bonding, anodic bonding, eutectic bonding, plasma bonding, silicon-to-silicon bonding, silicon dioxide bonding, silicon nitride bonding and polymer bonding or plasma bonding. The electrical connections are made using conducting interconnects aligned during the bonding process. The resulting circuitry has a three-dimensional architecture. The tunneling barrier layers of the RTD are formed of high-K dielectric materials such as SiO2, Si3N4, Al2O3, Y2O3, Ta2O5, TiO2, HfO2, Pr2O3, ZrO2, or their alloys and laminates, having higher band-gaps than the material forming the quantum well, which includes Si, Ge or SiGe. The inherently fast operational speed of the RTD, combined with the 3-D integrated architecture that reduces interconnect delays, will produce ultra-fast circuits with low noise characteristics.

摘要翻译： 通过金属对金属热压接合，阳极接合，共晶接合，等离子体接合，硅 - 二极管等工艺，形成双层势垒共振隧道二极管（RTD）并与CMOS / BJT / SiGe器件和电路集成， 硅键合，二氧化硅键合，氮化硅键合和聚合物键合或等离子体键合。 电连接使用在接合过程中对准的导电互连来制成。 所得到的电路具有三维结构。 RTD的隧道势垒层由高K电介质材料形成，例如SiO 2，Si 3 N 4 N 4，Al 2 O 3， 2个O 3，3个O 3，3个O 2，3个O 3， TiO 2，TiO 2，HfO 2，Pr 2 O 3，ZrO 2，N 2， >或其合金和层压体，具有比形成量子阱的材料（包括Si，Ge或SiGe）更高的带隙。 RTD的固有的快速操作速度与减少互连延迟的3-D集成架构相结合，将产生具有低噪声特性的超快速电路。