Abstract:
A light emitting device includes: a first semiconductor light emitting element having a solid-state blue light emitting element that emits blue light with a light emission peak in a wavelength range from 420 nm to less than 480 nm, and a first red phosphor layer that covers the solid-state blue light emitting element and includes a first red phosphor that emits red light with a light emission peak in a wavelength range from 600 nm to less than 680 nm; and a second semiconductor light emitting element having a solid-state green light emitting element that emits green light with a light emission peak in a wavelength range from 500 nm to less than 550 nm, and a second red phosphor layer that covers the solid-state green light emitting element and includes a second red phosphor that emits red light with a light emission peak in a wavelength range from 600 nm to less than 680 nm.
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract:
A plasma display device has a plasma display panel including phosphor layers 35 which emits light through electric discharge to output blue, green, and red lights, wherein at least one of the green light and the red light is a wavelength-converted light which is a light emitted from a first phosphor and wavelength-converted by a second phosphor, the first phosphor is a phosphor selected from a plurality of phosphors having an emission peak in a wavelength region ranging from at least 200 nm to less than 600 nm, the second phosphor used to emit the green light is a green phosphor having an emission peak in a wavelength region ranging from at least 500 nm to less than 560 nm, and the second phosphor used to emit the red light is a red phosphor having an emission peak in a wavelength region ranging from at least 600 nm to less than 780 nm.
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract translation:使用含有以组成式aM3N2.bAlN.cSi3N4为代表的成分为主成分的荧光体主体的荧光体组合物制造发光元件,其中,“M”为选自Mg ,Ca,Sr,Ba和Zn,“a”,“b”和“c”是满足0.2 <= a /(a + b)<= 0.95,0.05 <= b /(b + )<= 0.8,且0.4 <= c /(c + a)<= 0.95。 这使得能够提供发出白光的发光装置,同时满足高显色性和高光通量。
Abstract:
A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2≦a/(a+b)≦0.95, 0.05≦b/(b+c)≦0.8, and 0.4≦c/(c+a)≦0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.
Abstract translation:使用含有以组成式aM3N2.bAlN.cSi3N4为代表的成分为主成分的荧光体主体的荧光体组合物制造发光元件,其中,M为选自Mg,Ca ,Sr,Ba和Zn,a,b和c分别是满足0.2&nlE; a /(a + b)&nlE; 0.95,0.05&amp; nlE; b /(b + c)&nlE; 0.8,0.4& ; c /(c + a)&nlE; 0.95。 这使得能够提供发出白光的发光装置,同时满足高显色性和高光通量。
Abstract:
A nitridosilicate-based compound is produced by reacting an alkaline-earth metal compound capable of generating an alkaline-earth metal oxide by heating or a rare earth compound capable of generating a rare earth oxide by heating with at least a silicon compound, while the alkaline-earth metal compound or the rare earth compound is being reduced and nitrided by the reaction with carbon in an atmosphere of nitriding gas. Because of this, a nitridosilicate-based compound of high quality can be produced industrially at low cost.