公开(公告)号：US08895976B2

公开(公告)日：2014-11-25

申请号：US13164296

申请日：2011-06-20

申请人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/408

摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

摘要翻译： 制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管， 以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间 氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。 此外，制造包括晶体管的半导体器件。

公开(公告)号：US08268642B2

公开(公告)日：2012-09-18

申请号：US12893541

申请日：2010-09-29

申请人： Shuhei Yoshitomi ,  Masashi Tsubuku ,  Shunpei Yamazaki

发明人： Shuhei Yoshitomi ,  Masashi Tsubuku ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L51/40 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78603

摘要： An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being charged with static electricity by heat treatment or to favorably reduce static electricity with which a substrate is charged in a manufacturing process of a semiconductor device, heat treatment is performed with a substrate provided with a thin film transistor stored in a conductive container. In addition, a heating apparatus for performing the heat treatment is electrically connected to a ground potential, and the container and the substrate are also electrically connected to the ground potential.

摘要翻译： 本发明的目的是为了抑制薄膜晶体管的电特性的显着变化以及由于静电导致的偏离设计范围，并且提高制造半导体器件的成品率。 为了防止基板在半导体器件的制造工艺中通过热处理对静电进行充电或有利地降低基板充电所带来的静电，利用设置有薄膜晶体管的基板进行热处理 在导电容器中。 此外，用于进行热处理的加热装置电连接到地电位，并且容器和基板也电连接到地电位。

公开(公告)号：US20110315979A1

公开(公告)日：2011-12-29

申请号：US13164296

申请日：2011-06-20

申请人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

发明人： Masashi Tsubuku ,  Takayuki Inoue ,  Suzunosuke Hiraishi ,  Erumu Kikuchi ,  Hiromichi Godo ,  Shuhei Yoshitomi ,  Koki Inoue ,  Akiharu Miyanaga ,  Shunpei Yamazaki

IPC分类号： H01L29/78

CPC分类号： H01L29/7869 ,  H01L29/408

摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1

摘要翻译： 制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管， 以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间 氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。 此外，制造包括晶体管的半导体器件。

公开(公告)号：US20110081747A1

公开(公告)日：2011-04-07

申请号：US12893541

申请日：2010-09-29

申请人： Shuhei Yoshitomi ,  Masashi Tsubuku ,  Shunpei Yamazaki

发明人： Shuhei Yoshitomi ,  Masashi Tsubuku ,  Shunpei Yamazaki

IPC分类号： H01L21/336 ,  H01L21/26

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78603

摘要： An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being charged with static electricity by heat treatment or to favorably reduce static electricity with which a substrate is charged in a manufacturing process of a semiconductor device, heat treatment is performed with a substrate provided with a thin film transistor stored in a conductive container. In addition, a heating apparatus for performing the heat treatment is electrically connected to a ground potential, and the container and the substrate are also electrically connected to the ground potential.

摘要翻译： 本发明的目的是为了抑制薄膜晶体管的电特性的显着变化以及由于静电导致的偏离设计范围，并且提高制造半导体器件的成品率。 为了防止基板在半导体器件的制造工艺中通过热处理对静电进行充电或有利地降低基板充电所带来的静电，利用设置有薄膜晶体管的基板进行热处理 在导电容器中。 此外，用于进行热处理的加热装置电连接到地电位，并且容器和基板也电连接到地电位。

公开(公告)号：US08466014B2

公开(公告)日：2013-06-18

申请号：US13558368

申请日：2012-07-26

申请人： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

发明人： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/335

CPC分类号： H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

摘要翻译： 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：US08236627B2

公开(公告)日：2012-08-07

申请号：US12871122

申请日：2010-08-30

申请人： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

发明人： Masashi Tsubuku ,  Shuhei Yoshitomi ,  Takahiro Tuji ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hiroyuki Tomatsu ,  Masahiko Hayakawa

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/335

CPC分类号： H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

摘要翻译： 本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。 形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中， 重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以 制造。

公开(公告)号：US20080128517A1

公开(公告)日：2008-06-05

申请号：US11987124

申请日：2007-11-27

申请人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

发明人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

IPC分类号： G06K19/07 ,  H01L21/84

CPC分类号： H01L51/105 ,  G11C13/0016 ,  G11C13/004 ,  H01L27/283 ,  H01L51/006 ,  H01L51/0591

摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

摘要翻译： 在制造柔性存储器件和半导体器件的方法中，在具有分离层的衬底上形成包括元件层和密封元件层的绝缘层的堆叠，并且将堆叠与分离层分离。 元件层包括在一对电极，第一电极层和第二电极层之间具有含有有机化合物的层的存储元件，并且使用含有锡的合金层形成所述一对电极层中的至少一个。 柔性存储器件和半导体器件包括具有在一对电极之间含有有机化合物的层的存储元件，第一电极层和第二电极层，其中使用合金形成一对电极层中的至少一个 含锡层。

公开(公告)号：US07777232B2

公开(公告)日：2010-08-17

申请号：US11389233

申请日：2006-03-27

申请人： Masahiko Hayakawa ,  Shuhei Yoshitomi ,  Ryo Tokumaru

发明人： Masahiko Hayakawa ,  Shuhei Yoshitomi ,  Ryo Tokumaru

IPC分类号： H01L21/00

CPC分类号： H01L27/3244 ,  G09G3/3233 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  H01L51/5012 ,  H01L2251/5315 ,  H01L2251/5323

摘要： A display device having a first light-emitting element, a second light-emitting element, a constant current source, and an amplifier is provided. Each of the first light-emitting element and the second light-emitting element has a first layer including an organic compound and an inorganic compound and a second layer including a light-emitting substance, which are stacked between a pair of electrodes. The first layer is provided over the second layer. Alternatively, the second layer is provided over the first layer.

摘要翻译： 提供具有第一发光元件，第二发光元件，恒流源和放大器的显示装置。 第一发光元件和第二发光元件中的每一个具有堆叠在一对电极之间的包含有机化合物和无机化合物的第一层和包括发光物质的第二层。 第一层设置在第二层之上。 或者，第二层设置在第一层上。

公开(公告)号：US20060244375A1

公开(公告)日：2006-11-02

申请号：US11409898

申请日：2006-04-24

申请人： Shuhei Yoshitomi ,  Junichiro Sakata ,  Masahiro Takahashi

发明人： Shuhei Yoshitomi ,  Junichiro Sakata ,  Masahiro Takahashi

IPC分类号： H05B33/00

CPC分类号： H01L51/5048 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081

摘要： In order to provide a light emitting device which consistently emits light at the time of continuous driving in addition to obtain light emission having a high color purity in each of red, green and blue, a light emitting element according to the present invention, in which an organic compound film comprising a hole transporting material, an electron transporting material, a first impurity (first doping material), and a second impurity (second doping material) is provided between an anode and a cathode, is characterized in that the organic compound film is laminated with a first mixed region comprising the hole transporting material and the first impurity, a hole transporting region comprising the hole transporting material, a second mixed region comprising the electron transporting material and the second impurity, and an electron transporting region comprising the electron transporting material in order from the side of the anode.

摘要翻译： 为了提供在连续驱动时一直发光的发光装置，除了获得红色，绿色和蓝色各自具有高色纯度的发光之外，还提供了根据本发明的发光元件，其中 在阳极和阴极之间设置包含空穴传输材料，电子传输材料，第一杂质（第一掺杂材料）和第二杂质（第二掺杂材料）的有机化合物膜，其特征在于有机化合物膜 层叠有包含空穴传输材料和第一杂质的第一混合区域，包含空穴传输材料的空穴传输区域，包含电子传输材料和第二杂质的第二混合区域和包含电子传输区域的电子传输区域 材料从阳极一侧依次排列。

公开(公告)号：US07053402B2

公开(公告)日：2006-05-30

申请号：US10766170

申请日：2004-01-27

申请人： Shuhei Yoshitomi ,  Junichiro Sakata ,  Masahiro Takahashi

发明人： Shuhei Yoshitomi ,  Junichiro Sakata ,  Masahiro Takahashi

IPC分类号： H01L51/00

CPC分类号： H01L51/5048 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081

摘要： In order to provide a light emitting device which consistently emits light at the time of continuous driving in addition to obtain light emission having a high color purity in each of red, green and blue, a light emitting element according to the present invention, in which an organic compound film comprising a hole transporting material, an electron transporting material, a first impurity (first doping material), and a second impurity (second doping material) is provided between an anode and a cathode, is characterized in that the organic compound film is laminated with a first mixed region comprising the hole transporting material and the first impurity, a hole transporting region comprising the hole transporting material, a second mixed region comprising the electron transporting material and the second impurity, and an electron transporting region comprising the electron transporting material in order from the side of the anode.

摘要翻译： 为了提供在连续驱动时一直发光的发光装置，除了获得红色，绿色和蓝色各自具有高色纯度的发光之外，还提供了根据本发明的发光元件，其中 在阳极和阴极之间设置包含空穴传输材料，电子传输材料，第一杂质（第一掺杂材料）和第二杂质（第二掺杂材料）的有机化合物膜，其特征在于有机化合物膜 层叠有包含空穴传输材料和第一杂质的第一混合区域，包含空穴传输材料的空穴传输区域，包含电子传输材料和第二杂质的第二混合区域和包含电子传输区域的电子传输区域 材料从阳极一侧依次排列。