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    Device, and method for manufacturing the same
    1.
    发明申请
    Device, and method for manufacturing the same 失效
    装置及其制造方法

    公开(公告)号：US20080128517A1

    公开(公告)日：2008-06-05

    申请号：US11987124

    申请日：2007-11-27

    申请人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

    发明人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

    IPC分类号： G06K19/07 ,  H01L21/84

    CPC分类号： H01L51/105 ,  G11C13/0016 ,  G11C13/004 ,  H01L27/283 ,  H01L51/006 ,  H01L51/0591

    摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

    摘要翻译： 在制造柔性存储器件和半导体器件的方法中，在具有分离层的衬底上形成包括元件层和密封元件层的绝缘层的堆叠，并且将堆叠与分离层分离。 元件层包括在一对电极，第一电极层和第二电极层之间具有含有有机化合物的层的存储元件，并且使用含有锡的合金层形成所述一对电极层中的至少一个。 柔性存储器件和半导体器件包括具有在一对电极之间含有有机化合物的层的存储元件，第一电极层和第二电极层，其中使用合金形成一对电极层中的至少一个 含锡层。

    Device, and method for manufacturing the same
    2.
    发明授权
    Device, and method for manufacturing the same 失效
    装置及其制造方法

    公开(公告)号：US07712676B2

    公开(公告)日：2010-05-11

    申请号：US11987124

    申请日：2007-11-27

    申请人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

    发明人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

    IPC分类号： G06K21/06

    CPC分类号： H01L51/105 ,  G11C13/0016 ,  G11C13/004 ,  H01L27/283 ,  H01L51/006 ,  H01L51/0591

    摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

    摘要翻译： 在制造柔性存储器件和半导体器件的方法中，在具有分离层的衬底上形成包括元件层和密封元件层的绝缘层的堆叠，并且将堆叠与分离层分离。 元件层包括在一对电极，第一电极层和第二电极层之间具有含有有机化合物的层的存储元件，并且使用含有锡的合金层形成所述一对电极层中的至少一个。 柔性存储器件和半导体器件包括具有在一对电极之间含有有机化合物的层的存储元件，第一电极层和第二电极层，其中使用合金形成一对电极层中的至少一个 含锡层。

    Memory element and semiconductor device
    4.
    发明申请
    Memory element and semiconductor device 有权
    存储元件和半导体器件

    公开(公告)号：US20080017849A1

    公开(公告)日：2008-01-24

    申请号：US11713751

    申请日：2007-03-05

    申请人： Mikio Yukawa ,  Nozomu Sugisawa

    发明人： Mikio Yukawa ,  Nozomu Sugisawa

    IPC分类号： H01L51/10

    CPC分类号： H01L27/13 ,  H01L27/101

    摘要： It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.

    摘要翻译： 本发明的目的是减少每个存储元件的行为变化。 此外，本发明的另一个目的是获得其性能和可靠性方面优于其上安装有存储元件的半导体器件。 本发明的记忆元件在其结构中包括第一导电层; 半导体层; 有机化合物层; 以及第二导电层，其中半导体层和有机化合物层介于第一导电层和第二导电层之间，并且半导体层形成为与第一导电层和/或第二导电层接触 。 利用这种结构，减少了每个存储元件的行为变化。

    Memory element and semiconductor device including the memory element
    5.
    发明授权
    Memory element and semiconductor device including the memory element 有权
    存储元件和包括存储元件的半导体器件

    公开(公告)号：US08421061B2

    公开(公告)日：2013-04-16

    申请号：US11713751

    申请日：2007-03-05

    申请人： Mikio Yukawa ,  Nozomu Sugisawa

    发明人： Mikio Yukawa ,  Nozomu Sugisawa

    IPC分类号： H01L29/08 ,  H01L51/00

    CPC分类号： H01L27/13 ,  H01L27/101

    摘要： It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.

    摘要翻译： 本发明的目的是减少每个存储元件的行为变化。 此外，本发明的另一个目的是获得其性能和可靠性方面优于其上安装有存储元件的半导体器件。 本发明的记忆元件在其结构中包括第一导电层; 半导体层; 有机化合物层; 以及第二导电层，其中半导体层和有机化合物层介于第一导电层和第二导电层之间，并且半导体层形成为与第一导电层和/或第二导电层接触 。 利用这种结构，减少了每个存储元件的行为变化。

    Memory device and a semiconductor device
    7.
    发明授权
    Memory device and a semiconductor device 有权
    存储器件和半导体器件

    公开(公告)号：US08847209B2

    公开(公告)日：2014-09-30

    申请号：US13085727

    申请日：2011-04-13

    申请人： Mikio Yukawa

    发明人： Mikio Yukawa

    IPC分类号： H01L35/24 ,  G11C13/04 ,  G11C13/00 ,  B82Y10/00 ,  H01L27/13 ,  H01L51/52

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/13 ,  H01L51/52

    摘要： The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.

    摘要翻译： 本发明提供了一种以低成本写入的高可靠性的存储器件和半导体器件。 此外，本发明提供了一种具有非易失性存储元件的存储器件和半导体器件，其中可以额外地写入数据，并且可以防止由于重写等引起的伪造。 存储元件包括形成在第一导电层和第二导电层之间的第一导电层，第二导电层和有机化合物层，并且其具有通过复合可以是激发态的光敏氧化还原剂 电子和空穴的能量以及可与光敏氧化还原剂反应的物质。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08101943B2

    公开(公告)日：2012-01-24

    申请号：US11918611

    申请日：2006-04-25

    申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

    发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

    IPC分类号： H01L35/24 ,  H01L51/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

    摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

    摘要翻译： 本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07688624B2

    公开(公告)日：2010-03-30

    申请号：US11547905

    申请日：2005-11-22

    申请人： Hiroko Abe ,  Mikio Yukawa ,  Tamae Takano ,  Yoshinobu Asami ,  Kiyoshi Kato ,  Ryoji Nomura ,  Yoshitaka Moriya

    发明人： Hiroko Abe ,  Mikio Yukawa ,  Tamae Takano ,  Yoshinobu Asami ,  Kiyoshi Kato ,  Ryoji Nomura ,  Yoshitaka Moriya

    IPC分类号： G11C11/34

    CPC分类号： H01L27/1266 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L27/283 ,  H01L51/0059

    摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

    摘要翻译： 本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。 本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。