Abstract:
A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma. By disposing an extracting electrode at the opening of the plasma-generating vessel, ion beams can be extracted from the main plasma.
Abstract:
An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18. The control apparatus 22 performs, at least once respectively, {circle around (1)} the current value control routine which calculates average values of all beam current measured by the beam current measuring instruments 18, and increases and decreases the respective filament current IF such that the average value comes near to the set value, and {circle around (2)} the uniformity control routine which groups the beam current measuring instruments 17 into the number of the filaments, seeks for a maximum value and the minimum value from all the measured values of the beam current IB, decides groups to which the maximum value and the minimum value belong, decreases the filament current IF passing to the filaments 6 corresponding to the maximum value, and increases the filament current IF passing to the filaments 6 corresponding to the minimum value.
Abstract:
The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1. Vs=K[Vm(t1)+{1/(Cm·Rm)}∫0t1Vm(t)dt]where K=(Cs+Cm)/Cs or K=Cm/Cs (if Cm>>Cs)
Abstract:
The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1. Vs=K[Vm(t1)+{1/(Cm·Rm)}∫0t1Vm(t)dt] where K=(Cs+Cm)/Cs or K=Cm/Cs (if Cm>>Cs).
Abstract translation:充电电压测量装置包括:测量电极,用于形成具有设置在基板保持单元上的基板的静电电容Cs;测量电容器,其具有连接在测量电极和接地电位部分之间的静电电容Cm; 用于测量测量电容器两端的测量电压Vm的电压测量单元和计算单元。 计算单元22基于在时刻t 1的测量电压Vm(t 1),电压分压的倒数K,根据下面的数值计算时刻t 1的基板表面的充电电压Vs 比率和与测量电容器18并联设置的电阻器的电阻值Rm,当测量时间为t时。<?in-line-formula description =“In-line Formulas”end =“lead”?> Vs = K [Vm(t 1)+ {1/(Cm.Rm)}∫0t1Vm(t)dt]> Cs)的直线公式“end =”tail“?>
Abstract:
The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1 Vs=K[Vm(t1)+{1/(Cm·Rm)}∫0t1Vm(t)dt] where K=(Cs+Cm)/Cs or K=Cm/Cs (if Cm>>Cs).