摘要:
A silver halide photographic light-sensitive material improved in light-fastness of dye images and in prevention of yellow-stain formation in a non-colored area after processing. The photographic material comprises a support having thereon photographic structural layers including at least one silver halide emulsion layer. At least one of the photographic component layers contains a compound represented by the following Formula [I]: ##STR1## A magenta coupler represented by the following formula [M-I] is preferably used with the above compound. ##STR2##
摘要:
Silver halide color photographic light-sensitive material is disclosed, which is improved in color reproducibility and in fastness of magenta images to light, heat and humidity. The photographic material a magenta coupler represented by Formula (M-1) and a compound represented by Formula (XI) or Formula (XII). ##STR1## In formulas (XI) and (XII) X.sup.1 is an oxygen atom, a sulfur atom or an --NR.sup.10 --; X.sup.2 represents a hydroxyl sulfur atom; R.sup.6 and R.sup.7 each represent a substituent having a .sigma. p value of not more than -0.25; M represents a metal atom; and a and b each represent an integer of 0 to 3.
摘要:
A silver halide photographic material comprising a pyrazolotriazole coupler represented by the following Formula I and a stabilizer represented by the following Formula VIII. ##STR1## The substituents are as defined in the specification.
摘要:
A process for producing (meth)acrylic acid of the present invention comprises the steps in the following order: a crystallization step of supplying a cooling medium cooled by a heat source device to a crystallizer to obtain a (meth)acrylic acid crystal from a crude (meth)acrylic acid solution; an adjustment step of returning the cooling medium discharged from the crystallizer to the crystallizer without cooling; a sweating step of supplying a heating medium to the crystallizer to partially melt the (meth)acrylic acid crystal, thereby obtaining a melted liquid, and discharging the melted liquid from the crystallizer; and a melting step of supplying the heating medium to the crystallizer to melt the (meth)acrylic acid crystal, thereby obtaining purified (meth)acrylic acid. According to the present invention, purified (meth)acrylic acid with high purity can be obtained.
摘要:
A process for producing (meth)acrylic acid of the present invention comprises the steps in the following order: a crystallization step of supplying a cooling medium cooled by a heat source device to a crystallizer to obtain a (meth)acrylic acid crystal from a crude (meth)acrylic acid solution; an adjustment step of returning the cooling medium discharged from the crystallizer to the crystallizer without cooling; a sweating step of supplying a heating medium to the crystallizer to partially melt the (meth)acrylic acid crystal, thereby obtaining a melted liquid, and discharging the melted liquid from the crystallizer; and a melting step of supplying the heating medium to the crystallizer to melt the (meth)acrylic acid crystal, thereby obtaining purified (meth)acrylic acid. According to the present invention, purified (meth)acrylic acid with high purity can be obtained.
摘要:
The present invention provides a novel polypeptide having a β1,3-N-acetylglucosaminyl transferase activity; a method for producing the polypeptide; a DNA which encodes the polypeptide; a recombinant vector into which the DNA is inserted; a transformant comprising the recombinant vector; a method for producing a sugar chain or complex carbohydrate, using the polypeptide; a method for producing a sugar chain or complex carbohydrate, using the transformant; an antibody which recognizes the polypeptide; a method for screening a substance which changes the expression of the gene which encodes the polypeptide; and a method for screening a substance which changes the activity of the polypeptide.
摘要:
A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.
摘要:
A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.
摘要:
In a network system, which has a first computer belonging to a first network, a second computer belonging to a second network, and a first router and a second router belonging to a third network, wherein the first computer and the second computer are connected through a logical path built between the first router and the second router, wherein the first, second and third network are connected to one another, wherein the first and second network and the third network are independently operated; the first router stores as its first address an address used by the first network but not used by the first computer, or an address used by the second network but not used by the second computer and, based on the first address, sends a first packet and receives a second packet corresponding to the first packet.