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1.发明申请NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开非易失性半导体存储器件及其制造方法公开(公告)号：US20150295170A1
公开(公告)日：2015-10-15
申请号：US14748494
申请日：2015-06-24
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01L21/0234 , H01L21/28202 , H01L27/222 , H01L27/224 , H01L27/226 , H01L27/228 , H01L29/4236 , H01L29/518 , H01L29/78 , H01L43/02
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.
摘要翻译： 根据一个实施例，非易失性半导体存储器件包括形成在半导体衬底上的磁阻元件，延伸穿过形成在半导体衬底上并紧靠磁阻元件下方的层间绝缘膜的第一接触插塞具有与 半导体衬底的上表面，并且与磁阻元件相邻，以及形成在磁阻元件和第一接触插塞之间以及层间电介质膜上的绝缘膜，其中绝缘膜包括位于 所述层间电介质膜和位于所述绝缘膜中并位于所述第一区域的上表面上的第二区域，所述绝缘膜由SiN制成，并且所述第一区域与所述第二区域相比是富氮膜。
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公开(公告)号：US20150069559A1
公开(公告)日：2015-03-12
申请号：US14203422
申请日：2014-03-10
CPC分类号： H01L43/12 , H01L21/0234 , H01L21/28202 , H01L27/222 , H01L27/224 , H01L27/226 , H01L27/228 , H01L29/4236 , H01L29/518 , H01L29/78 , H01L43/02
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.
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3.发明申请公开(公告)号：US20160079519A1
公开(公告)日：2016-03-17
申请号：US14639675
申请日：2015-03-05
CPC分类号： H01L43/08 , H01L27/224 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.
摘要翻译： 根据一个实施例，一种制造磁存储器件的方法包括由包括磁性层的多个层形成的堆叠结构，该方法包括形成包括至少一层的下部结构膜，蚀刻下部结构膜以形成 堆叠结构的下部结构，在包括下部结构的区域上形成包括至少一个层的上部结构膜，并且蚀刻上部结构膜以在下部结构上形成堆叠结构的上部结构。
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公开(公告)号：US20160072055A1
公开(公告)日：2016-03-10
申请号：US14630412
申请日：2015-02-24
CPC分类号： H01L43/12 , H01L27/228
摘要： According to one embodiment, a manufacturing method of a semiconductor memory device includes the following steps. The method includes forming a first magnetic layer, a second magnetic layer, and an insulating layer therebetween, forming a mask layer on the second magnetic layer, etching the second magnetic layer, the insulating layer, and the first magnetic layer using the mask layer as a mask and forming a magnetic tunnel junction (MTJ) element, and performing oxidation a sidewall of the MTJ element with H2O.
摘要翻译： 根据一个实施例，半导体存储器件的制造方法包括以下步骤。 该方法包括在其间形成第一磁性层，第二磁性层和绝缘层，在第二磁性层上形成掩模层，使用掩模层蚀刻第二磁性层，绝缘层和第一磁性层作为 掩模和形成磁隧道结（MTJ）元件，并用H 2 O进行MTJ元件的侧壁氧化。
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公开(公告)号：US20160072050A1
公开(公告)日：2016-03-10
申请号：US14642506
申请日：2015-03-09
摘要： According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.
摘要翻译： 根据一个实施例，磁存储器件包括第一堆叠结构，其包括第一磁性层和设置在第一磁性层上的第一非磁性层，第二堆叠结构，包括设置在第一非磁性层上的第二磁性层，第二层 设置在第二磁性层上的非磁性层和设置在第二非磁性层上的顶部导电层，以及设置在第二堆叠结构的侧壁上的侧壁导电层。
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6.发明申请公开(公告)号：US20150263273A1
公开(公告)日：2015-09-17
申请号：US14479180
申请日：2014-09-05
CPC分类号： H01L43/12 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.
摘要翻译： 根据一个实施例，磁存储器包括在半导体衬底中具有第一和第二扩散层的晶体管和位于第一和第二扩散层之间的栅电极，半导体衬底上的第一绝缘层，覆盖晶体管的第一绝缘层， 第一绝缘层中的第一接触插塞，连接到第一扩散层的第一接触插塞，第一绝缘层中的第二接触插塞，连接到第二扩散层的第二接触插塞，第一绝缘层上的磁阻元件 连接到第一接触插塞的磁阻元件，磁阻元件上的电极以及第一绝缘层，第二接触插塞和电极中的杂质区域。
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公开(公告)号：US20150263265A1
公开(公告)日：2015-09-17
申请号：US14479192
申请日：2014-09-05
申请人： Masatoshi YOSHIKAWA , Hiroaki YODA , Shuichi TSUBATA , Kenji NOMA , Tatsuya KISHI , Satoshi SETO , Kazuhiro TOMIOKA
发明人： Masatoshi YOSHIKAWA , Hiroaki YODA , Shuichi TSUBATA , Kenji NOMA , Tatsuya KISHI , Satoshi SETO , Kazuhiro TOMIOKA
摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
摘要翻译： 根据一个实施例，磁存储器件包括堆叠结构，其包括磁性元件，覆盖层叠结构的保护绝缘膜以及设置在堆叠结构和保护绝缘膜之间的界面处的界面层。 界面层包含不包含在磁性元件或保护绝缘膜中的预定元件。
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公开(公告)号：US20160072056A1
公开(公告)日：2016-03-10
申请号：US14637019
申请日：2015-03-03
CPC分类号： H01L43/12 , H01L27/222 , H01L43/02
摘要： According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.
摘要翻译： 根据一个实施例，一种制造磁存储器件的方法包括在下面的区域上形成包括磁性层的叠层膜，在叠层膜上形成硬掩模，通过使用硬掩模蚀刻叠层膜形成堆叠结构 作为掩模，在堆叠结构的侧表面上形成第一保护绝缘膜，并进行氧化处理。
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公开(公告)号：US20160072047A1
公开(公告)日：2016-03-10
申请号：US14629087
申请日：2015-02-23
摘要： According to one embodiment, a semiconductor memory device includes a lower electrode, an MTJ element, a cap layer and an upper electrode. The lower electrode is provided above a semiconductor substrate. The MTJ element is provided above the lower electrode. The cap layer is provided above the MTJ element and is oxygen-free. The upper electrode is connected to the cap layer.
摘要翻译： 根据一个实施例，半导体存储器件包括下电极，MTJ元件，盖层和上电极。 下电极设置在半导体衬底上。 MTJ元件设置在下电极的上方。 盖层设置在MTJ元件上方且无氧。 上电极连接到盖层。
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公开(公告)号：US20160064653A1
公开(公告)日：2016-03-03
申请号：US14638699
申请日：2015-03-04
CPC分类号： H01L43/08 , G11C11/161 , H01L43/12
摘要： According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a first magnetic layer, forming a mask portion on the stack film, forming a sidewall insulating portion on a sidewall of the mask portion, etching the stack film using the mask portion and the sidewall insulating portion as a mask to form a stack structure including a first portion below the mask portion and a second portion below the sidewall insulating portion, forming an ambient insulating film enclosing the mask portion, the sidewall insulating portion and the stack structure, and etching the ambient insulating film, the sidewall insulating portion and the second portion of the stack structure using the mask portion as a mask to leave the first portion of the stack structure.
摘要翻译： 根据一个实施例，一种制造磁存储器件的方法包括形成包括第一磁性层的堆叠膜，在叠层膜上形成掩模部分，在掩模部分的侧壁上形成侧壁绝缘部分，蚀刻叠层 使用掩模部分和侧壁绝缘部分作为掩模的薄膜，以形成包括掩模部分下方的第一部分和侧壁绝缘部分下方的第二部分的堆叠结构，形成包围掩模部分的环境绝缘膜，侧壁绝缘部分 并且使用掩模部分作为掩模蚀刻环境绝缘膜，侧壁绝缘部分和堆叠结构的第二部分，以离开堆叠结构的第一部分。
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