公开(公告)号：US20140113450A1

公开(公告)日：2014-04-24

申请号：US14125363

申请日：2012-06-12

申请人： Shuichiro Uda ,  Takaaki Nezu ,  Shinji Fuchigami ,  Koji Maruyama

发明人： Shuichiro Uda ,  Takaaki Nezu ,  Shinji Fuchigami ,  Koji Maruyama

IPC分类号： H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3065 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/32132 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/76898

摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.

摘要翻译： 等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从 使用抗蚀剂层作为掩模的蚀刻气体。 等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。

公开(公告)号：US09048191B2

公开(公告)日：2015-06-02

申请号：US14125363

申请日：2012-06-12

申请人： Shuichiro Uda ,  Takaaki Nezu ,  Shinji Fuchigami ,  Koji Maruyama

发明人： Shuichiro Uda ,  Takaaki Nezu ,  Shinji Fuchigami ,  Koji Maruyama

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/3065 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/3266 ,  H01J37/32669 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/32132 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/76898

摘要： A plasma etching method includes supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a predetermined flow rate into a processing chamber that accommodates a processing substrate including a silicon layer and a resist layer, and etching the silicon layer with plasma generated from the etching gas using the resist layer as a mask. The plasma etching method further includes a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a first flow ratio; a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio to a second flow ratio, which is lower than the first flow ratio; and a third step of etching the silicon layer while the flow ratio is adjusted to the second flow ratio.

摘要翻译： 等离子体蚀刻方法包括将含有氧气和硫氟化物气体的蚀刻气体以预定的流量供给到容纳包括硅层和抗蚀剂层的处理基板的处理室中，并且利用从 使用抗蚀剂层作为掩模的蚀刻气体。 等离子体蚀刻方法还包括：在将氧气与氟化硫气体的流量比调整为第一流量比的同时蚀刻硅层的第一步骤; 第二步骤，在降低所述氧气的流量的同时，将所述流量比降低到低于所述第一流量比的第二流量比，来蚀刻所述硅层; 以及在流量比被调节到第二流量比时蚀刻硅层的第三步骤。