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    Method of remedying deterioration of insulating film
    1.
    发明授权
    Method of remedying deterioration of insulating film 有权
    补救绝缘膜劣化的方法

    公开(公告)号：US08088686B2

    公开(公告)日：2012-01-03

    申请号：US12226422

    申请日：2007-04-18

    申请人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

    发明人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105

    摘要： The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

    摘要翻译： 本发明提供一种补偿绝缘膜的劣化的方法，其在通过等离子体处理劣化的绝缘膜的补救处理中，不会在诸如铜布线层的布线材料上留下残留的补救剂，可以使用 干法，对大批量生产具有优异的适用性。 通过等离子体处理劣化的绝缘膜与由具有至少一个硝基和羰基的分子结构的化合物组成的补救剂与烃基和氢中的至少一种接触 组。

    Method of manufacturing a semiconductor device and processing apparatus
    4.
    发明申请
    Method of manufacturing a semiconductor device and processing apparatus 有权
    制造半导体器件和处理装置的方法

    公开(公告)号：US20090130860A1

    公开(公告)日：2009-05-21

    申请号：US12216596

    申请日：2008-07-08

    申请人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

    发明人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

    IPC分类号： H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/4405 ,  H01L21/3141 ,  H01L21/31645

    摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

    摘要翻译： 为了除去沉积在处理室内部的高介电常数膜的沉积物，通过使用仅通过加热活化的清洗气体。 该方法包括以下步骤：将衬底或多个衬底装载到处理室中; 进行处理，通过向处理室供给处理气体，将高介电常数膜沉积在基板上; 从处理室的内部卸载经处理的基板; 以及通过向所述处理室中供给卤化物气体和氧气基气体来清洁所述处理室的内部，以及去除包括沉积在所述处理室内部的所述高介电常数膜的沉积物，以及在所述处理室的内部清洁步骤 处理室中的卤化物气体和氧气基气体中的氧基气体的浓度设定为小于7％。