摘要:
A semiconductor memory device is provided which has a hierarchical bit line structure and can perform a high-speed read operation even with a low voltage. A subarray 12 includes a first MOS transistor PD1 for charging a main bit line MBL1 and a second MOS transistor PS1 for charging a sub-bit line SBL1—1. The source electrode of the second MOS transistor PS1 is connected to a power source voltage, and the source electrode of the first MOS transistor PD1 is connected via a fourth MOS transistor PD2 to the power source voltage. Since there is not a resistance between the main bit line MBL1 and the sub-bit line SBL1—1, which is present if a transistor is used to achieve conduction therebetween, discharging of the main bit line and charging of the sub-bit line can be performed with high speed.
摘要:
A semiconductor memory device is provided which has a hierarchical bit line structure and can perform a high-speed read operation even with a low voltage. A subarray 12 includes a first MOS transistor PD1 for charging a main bit line MBL1 and a second MOS transistor PS1 for charging a sub-bit line SBL1—1. The source electrode of the second MOS transistor PS1 is connected to a power source voltage, and the source electrode of the first MOS transistor PD1 is connected via a fourth MOS transistor PD2 to the power source voltage. Since there is not a resistance between the main bit line MBL1 and the sub-bit line SBL1—1, which is present if a transistor is used to achieve conduction therebetween, discharging of the main bit line and charging of the sub-bit line can be performed with high speed.
摘要:
Subarrays, which constitute a memory cell array, each include a bit line driving transistor having a drain connected to a bit line, a source is connected to an interconnection having a power supply potential, and a gate is connected to a sub-bit line. The plurality of memory cells are each provided in such away that a gate is connected to a word line, a source is grounded, and whether a drain is connected to the sub-bit line or not is selected in correspondence to data to be stored. Transmission transistors each have a gate connected to the bit line, a source connected to a loading transistor section, and a drain connected to the sub-bit line.
摘要:
A semiconductor memory device includes a memory cell array, a charge circuit which compensates for OFF leakage current developed at selected bit lines, a reset circuit having a ground potential corresponding to a potential at non-selected bit lines, a read circuit constituted by a plurality of transistors whose gates are connected to the bit lines, and a bit line precharge circuit which charges the selected bit lines for a fixed time period. As a result of adopting such a configuration, there is no need to provide a transmission gate, such as a column decoder, to a charging path between the read circuit and the bit lines, so that a low-power supply voltage operation can be effected without the influence of a substrate bias effect.
摘要:
Subarrays, which constitute a memory cell array, each include a bit line driving transistor having a drain connected to a bit line, a source is connected to an interconnection having a power supply potential, and a gate is connected to a sub-bit line. The plurality of memory cells are each provided in such away that a gate is connected to a word line, a source is grounded, and whether a drain is connected to the sub-bit line or not is selected in correspondence to data to be stored. Transmission transistors each have a gate connected to the bit line, a source connected to a loading transistor section, and a drain connected to the sub-bit line.
摘要:
A semiconductor memory device includes a memory cell array, a charge circuit which compensates for OFF leakage current developed at selected bit lines, a reset circuit having a ground potential corresponding to a potential at non-selected bit lines, a read circuit constituted by a plurality of transistors whose gates are connected to the bit lines, and a bit line precharge circuit which charges the selected bit lines for a fixed time period. As a result of adopting such a configuration, there is no need to provide a transmission gate, such as a column decoder, to a charging path between the read circuit and the bit lines, so that a low-power supply voltage operation can be effected without the influence of a substrate bias effect.
摘要:
An output end and an inverted output end of a latch circuit that is connected to an output buffer circuit are switched with each other, and thereby, the relationship between the data of “0” or “1” and the drain of a memory cell is connected or not connected to a bit line is changed. In addition, an input of a sense amplifier is fixed at the grounding potential by means of a test control signal, and thereby, positive logic is confirmed in the case where the output of the output buffer circuit is “L,” and negative logic is confirmed in the case where the output of the output buffer circuit is “H.”
摘要:
A semiconductor device is provided for outputting data read from a read only storage device. The semiconductor device includes a read only storage device including memory cells, an address signal line for transmitting an address signal to each read only storage device, and a switching device to which the address signal is inputted. The address signal indicates an address of memory cells storing data to be read. The switching device includes an address storage circuit, a bit storage circuit and a switching storage circuit. The address storage circuit stores address information of a defective memory cell of the read only storage devices and detects whether or not memory cells storing data selected by an address signal includes a defective memory cell. The bit storage circuit stores bit information indicating which bit of data stored in memory cells including a defective memory cell is defective, and outputs a controlling signal. The switching circuit inputs the controlling signal and data outputted from a read only storage device which is selected by an address signal and outputs the data from the read only storage device. The switching circuit inverts a defective bit of the data outputted from the read only storage device in response to receipt of the controlling signal from the bit storage circuit and outputs data whose defective bit is inverted instead of the data outputted from the read only storage device.
摘要:
An output end and an inverted output end of a latch circuit that is connected to an output buffer circuit are switched with each other, and thereby, the relationship between the data of “0” or “1” and the drain of a memory cell is connected or not connected to a bit line is changed. In addition, an input of a sense amplifier is fixed at the grounding potential by means of a test control signal, and thereby, positive logic is confirmed in the case where the output of the output buffer circuit is “L,” and negative logic is confirmed in the case where the output of the output buffer circuit is “H.”
摘要:
The object of the present invention is directed to shorten a manufacturing TAT when changing a stored data of a mask ROM incorporated into a semiconductor integrated circuit device with multi-layered structure, and to improve a manufacturing yield. For example, when the semiconductor integrated circuit device comprising an interconnection layer with five layers are manufactured, when fabricating samples or prototypes where data to be written to the mask ROM is frequently changed, the manufacturing TAT is shortened by means of configuring a bit line as a fifth layer of metal interconnection layer of an uppermost layer, and an interlayer dielectric (ILD) layer just below it as a forming layer of a via hole for use in data writing. During the manufacture of mass-produced products after determining the ROM data, it is possible to decrease the number of layers for configuring the memory cell by means of forming the bit line by the first metal interconnection layer of a lowermost layer, and configuring the ILD layer just below it as a forming layer of the via hole for use in data writing, to improve the manufacturing yield by reducing manufacturing process steps of the memory cell.