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    Semiconductor device and method for manufacturing the semiconductor device
    9.
    发明授权
    Semiconductor device and method for manufacturing the semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US08936963B2

    公开(公告)日：2015-01-20

    申请号：US12720092

    申请日：2010-03-09

    申请人： Hiroki Ohara ,  Toshinari Sasaki

    发明人： Hiroki Ohara ,  Toshinari Sasaki

    IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L29/786 ,  H01L27/12

    CPC分类号： H01L21/02565 ,  H01L21/02554 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/7869

    摘要： If an oxide semiconductor layer is crystallized by heat treatment without being covered with an inorganic insulating film, surface unevenness and the like are formed due to the crystallization, which may cause variation in electrical characteristics. Steps are performed in the following order: a second insulating film is formed on an oxide semiconductor layer over a substrate and then heat treatment is performed, instead of performing heat treatment during a period immediately after formation of the oxide semiconductor layer and immediately before formation of an inorganic insulating film including silicon oxide on the oxide semiconductor layer. The density of hydrogen included in the inorganic insulating film including silicon oxide is 5×1020/cm3 or more, and the density of nitrogen is 1×1019/cm3 or more.

    摘要翻译： 如果氧化物半导体层通过热处理结晶而不被无机绝缘膜覆盖，则由于结晶而形成表面不均匀等，这可能导致电特性的变化。 按照以下顺序进行步骤：在衬底上的氧化物半导体层上形成第二绝缘膜，然后进行热处理，而不是在形成氧化物半导体层之后的时间段内立即进行热处理 在氧化物半导体层上包含氧化硅的无机绝缘膜。 包括在包含氧化硅的无机绝缘膜中的氢的密度为5×10 20 / cm 3以上，氮的密度为1×10 19 / cm 3以上。

    Semiconductor device and method for manufacturing the same
    10.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08492756B2

    公开(公告)日：2013-07-23

    申请号：US12683695

    申请日：2010-01-07

    申请人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

    发明人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

    IPC分类号： H01L29/24 ,  H01L29/22 ,  H01L21/34

    CPC分类号： H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

    摘要： An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitride film.

    摘要翻译： 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氮氧化物膜的氧化物半导体层形成。