Light emitting device and fabrication method thereof
    6.
    发明授权
    Light emitting device and fabrication method thereof 有权
    发光元件及其制造方法

    公开(公告)号:US07154120B2

    公开(公告)日:2006-12-26

    申请号:US10756454

    申请日:2004-01-14

    IPC分类号: H01L29/04

    摘要: The present invention provides an inexpensive light emitting device and an inexpensive electric appliance. By reducing the number of photolithography steps in the fabrication of TFTs, the yield of the light emitting devices can be enhanced and the manufacturing period can be shortened. The present invention is substantially characterized in that a gate electrode is formed of a conductive film made of a plurality of layers and the concentration of impurity regions formed in the inside of an active layer can be adjusted by making use of the selection ratio at the time of etching these layers.

    摘要翻译: 本发明提供廉价的发光装置和便宜的电器。 通过减少TFT的制造中的光刻步骤的数量,可以提高发光器件的产量,并且可以缩短制造周期。 本发明的特征在于,栅电极由多层制成的导电膜形成,并且可以通过利用当时的选择比来调节在有源层的内部形成的杂质区的浓度 蚀刻这些层。