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    Display device and method for manufacturing the same
    5.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US08232598B2

    公开(公告)日：2012-07-31

    申请号：US12232311

    申请日：2008-09-15

    申请人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    发明人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    IPC分类号： H01L27/12

    CPC分类号： H01L21/67144 ,  H01L21/76254 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/66772 ,  H01L2227/326 ,  H01L2924/00011 ,  H01L2224/80001

    摘要： To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, and reduction in the area of the field-effect transistor which occupies the pixel, without depending on a microfabrication technique of the field-effect transistor, even when the number of field-effect transistors in the pixel is increased. A display device is provided with a plurality of pixels in which a plurality of field-effect transistors including a semiconductor layer which is separated from a semiconductor substrate and is bonded to a supporting substrate having an insulating surface are stacked with a planarization layer interposed therebetween.

    摘要翻译： 为了提供能够实现形成显示装置的像素的场效应晶体管的高性能的显示装置，其可以实现由于场效应晶体管的数量的增加而减小的像素的开口率的提高， 效应晶体管，并且即使当像素中的场效应晶体管的数量增加时，占据像素的场效应晶体管的面积减小，而不依赖于场效应晶体管的微细加工技术。 显示装置设置有多个像素，其中包括与半导体衬底分离并且与具有绝缘表面的支撑衬底结合的半导体层的多个场效应晶体管之间插入有平坦化层。

    Display device and method for manufacturing the same
    6.
    发明申请
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US20090078939A1

    公开(公告)日：2009-03-26

    申请号：US12232311

    申请日：2008-09-15

    申请人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    发明人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L21/67144 ,  H01L21/76254 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/66772 ,  H01L2227/326 ,  H01L2924/00011 ,  H01L2224/80001

    摘要： To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, and reduction in the area of the field-effect transistor which occupies the pixel, without depending on a microfabrication technique of the field-effect transistor, even when the number of field-effect transistors in the pixel is increased. A display device is provided with a plurality of pixels in which a plurality of field-effect transistors including a semiconductor layer which is separated from a semiconductor substrate and is bonded to a supporting substrate having an insulating surface are stacked with a planarization layer interposed therebetween.

    摘要翻译： 为了提供能够实现形成显示装置的像素的场效应晶体管的高性能的显示装置，其可以实现由于场效应晶体管的数量的增加而减小的像素的开口率的提高， 效应晶体管，并且即使当像素中的场效应晶体管的数量增加时，占据像素的场效应晶体管的面积减小，而不依赖于场效应晶体管的微细加工技术。 显示装置设置有多个像素，其中包括与半导体衬底分离并且与具有绝缘表面的支撑衬底结合的半导体层的多个场效应晶体管之间插入有平坦化层。

    Display device and electronic device having the display device, and method for manufacturing thereof
    7.
    发明申请
    Display device and electronic device having the display device, and method for manufacturing thereof 有权
    具有显示装置的显示装置和电子装置及其制造方法

    公开(公告)号：US20090039352A1

    公开(公告)日：2009-02-12

    申请号：US12222259

    申请日：2008-08-06

    申请人： Satoshi Kobayashi ,  Atsushi Miyaguchi ,  Yoshitaka Moriya ,  Yoshiyuki Kurokawa ,  Daisuke Kawae

    发明人： Satoshi Kobayashi ,  Atsushi Miyaguchi ,  Yoshitaka Moriya ,  Yoshiyuki Kurokawa ,  Daisuke Kawae

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L29/66765 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/78696

    摘要： To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.

    摘要翻译： 提供一种显示装置，其具有可以实现高电特性和减少截止电流的薄膜晶体管。 具有薄膜晶体管的显示装置包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极上的微晶半导体膜，栅极绝缘膜插入其间，沟道保护 提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜，设置在栅极绝缘膜上方，并且在微晶半导体膜和沟道保护层的侧表面上，设置在非晶半导体膜上的杂质半导体层 以及设置在杂质半导体层上方并与其接触的源电极和漏电极。 非晶半导体膜的厚度大于微晶半导体膜的厚度。

    Display device and electronic device having the display device, and method for manufacturing thereof
    8.
    发明授权
    Display device and electronic device having the display device, and method for manufacturing thereof 有权
    具有显示装置的显示装置和电子装置及其制造方法

    公开(公告)号：US08013338B2

    公开(公告)日：2011-09-06

    申请号：US12222259

    申请日：2008-08-06

    申请人： Satoshi Kobayashi ,  Atsushi Miyaguchi ,  Yoshitaka Moriya ,  Yoshiyuki Kurokawa ,  Daisuke Kawae

    发明人： Satoshi Kobayashi ,  Atsushi Miyaguchi ,  Yoshitaka Moriya ,  Yoshiyuki Kurokawa ,  Daisuke Kawae

    IPC分类号： H01L29/04

    CPC分类号： H01L29/66765 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/78696

    摘要： To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.

    摘要翻译： 提供一种显示装置，其具有可以实现高电特性和减少截止电流的薄膜晶体管。 具有薄膜晶体管的显示装置包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极上的微晶半导体膜，栅极绝缘膜插入其间，沟道保护 提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜，设置在栅极绝缘膜上方，并且在微晶半导体膜和沟道保护层的侧表面上，设置在非晶半导体膜上的杂质半导体层 以及设置在杂质半导体层上方并与其接触的源电极和漏电极。 非晶半导体膜的厚度大于微晶半导体膜的厚度。

    Display device and electronic device having the display device, and method for manufacturing thereof
    9.
    发明授权
    Display device and electronic device having the display device, and method for manufacturing thereof 有权
    具有显示装置的显示装置和电子装置及其制造方法

    公开(公告)号：US08222640B2

    公开(公告)日：2012-07-17

    申请号：US13215469

    申请日：2011-08-23

    申请人： Satoshi Kobayashi ,  Atsushi Miyaguchi ,  Yoshitaka Moriya ,  Yoshiyuki Kurokawa ,  Daisuke Kawae

    发明人： Satoshi Kobayashi ,  Atsushi Miyaguchi ,  Yoshitaka Moriya ,  Yoshiyuki Kurokawa ,  Daisuke Kawae

    IPC分类号： H01L29/04

    CPC分类号： H01L29/66765 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/78696

    摘要： To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.

    摘要翻译： 提供一种显示装置，其具有可以实现高电特性和减少截止电流的薄膜晶体管。 具有薄膜晶体管的显示装置包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极上的微晶半导体膜，栅极绝缘膜插入其间，沟道保护 提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜，设置在栅极绝缘膜上方，并且在微晶半导体膜和沟道保护层的侧表面上，设置在非晶半导体膜上的杂质半导体层 以及设置在杂质半导体层上方并与其接触的源电极和漏电极。 非晶半导体膜的厚度大于微晶半导体膜的厚度。

    Semiconductor memory device and semiconductor device
    10.
    发明授权
    Semiconductor memory device and semiconductor device 有权
    半导体存储器件和半导体器件

    公开(公告)号：US08248833B2

    公开(公告)日：2012-08-21

    申请号：US12552749

    申请日：2009-09-02

    申请人： Jun Koyama ,  Atsushi Miyaguchi

    发明人： Jun Koyama ,  Atsushi Miyaguchi

    IPC分类号： G11C5/06 ,  G11C5/08

    CPC分类号： H01L27/1021 ,  G11C17/16 ,  H01L27/12

    摘要： An anti-fuse memory device includes a plurality of word lines, a plurality of bit lines, and a memory cell provided with respect to an intersecting portion of any of the plurality of word lines and any of the plurality of bit lines. Memory cell includes a PIN diode and an anti-fuse. An anode of the PIN diode is electrically connected to any of the bit lines. A cathode of the PIN diode is electrically connected to a first terminal of the anti-fuse. A second terminal of the anti-fuse is electrically connected to any of the word lines. The anti-fuse includes a silicon layer and an insulating layer which are interposed between electrodes.

    摘要翻译： 反熔丝存储器件包括多个字线，多个位线以及相对于多个字线中的任一个和多个位线中的任一个的交叉部分而设置的存储单元。 存储单元包括PIN二极管和反熔丝。 PIN二极管的阳极电连接到任何位线。 PIN二极管的阴极电连接到反熔丝的第一端子。 反熔丝的第二端子电连接到任何字线。 反熔丝包括介于电极之间的硅层和绝缘层。