利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5368 条记录 (耗时 0.037 秒)

    Display device and method for manufacturing the same
    1.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US08232598B2

    公开(公告)日：2012-07-31

    申请号：US12232311

    申请日：2008-09-15

    申请人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    发明人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    IPC分类号： H01L27/12

    CPC分类号： H01L21/67144 ,  H01L21/76254 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/66772 ,  H01L2227/326 ,  H01L2924/00011 ,  H01L2224/80001

    摘要： To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, and reduction in the area of the field-effect transistor which occupies the pixel, without depending on a microfabrication technique of the field-effect transistor, even when the number of field-effect transistors in the pixel is increased. A display device is provided with a plurality of pixels in which a plurality of field-effect transistors including a semiconductor layer which is separated from a semiconductor substrate and is bonded to a supporting substrate having an insulating surface are stacked with a planarization layer interposed therebetween.

    摘要翻译： 为了提供能够实现形成显示装置的像素的场效应晶体管的高性能的显示装置，其可以实现由于场效应晶体管的数量的增加而减小的像素的开口率的提高， 效应晶体管，并且即使当像素中的场效应晶体管的数量增加时，占据像素的场效应晶体管的面积减小，而不依赖于场效应晶体管的微细加工技术。 显示装置设置有多个像素，其中包括与半导体衬底分离并且与具有绝缘表面的支撑衬底结合的半导体层的多个场效应晶体管之间插入有平坦化层。

    Display device and method for manufacturing the same
    4.
    发明申请
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US20090078939A1

    公开(公告)日：2009-03-26

    申请号：US12232311

    申请日：2008-09-15

    申请人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    发明人： Shunpei Yamazaki ,  Ikuko Kawamata ,  Atsushi Miyaguchi

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L21/67144 ,  H01L21/76254 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/66772 ,  H01L2227/326 ,  H01L2924/00011 ,  H01L2224/80001

    摘要： To provide a display device which can realize high performance of a field-effect transistor which forms a pixel of the display device and which can achieve improvement in an aperture ratio of a pixel, which has been reduced due to increase in the number of field-effect transistors, and reduction in the area of the field-effect transistor which occupies the pixel, without depending on a microfabrication technique of the field-effect transistor, even when the number of field-effect transistors in the pixel is increased. A display device is provided with a plurality of pixels in which a plurality of field-effect transistors including a semiconductor layer which is separated from a semiconductor substrate and is bonded to a supporting substrate having an insulating surface are stacked with a planarization layer interposed therebetween.

    摘要翻译： 为了提供能够实现形成显示装置的像素的场效应晶体管的高性能的显示装置，其可以实现由于场效应晶体管的数量的增加而减小的像素的开口率的提高， 效应晶体管，并且即使当像素中的场效应晶体管的数量增加时，占据像素的场效应晶体管的面积减小，而不依赖于场效应晶体管的微细加工技术。 显示装置设置有多个像素，其中包括与半导体衬底分离并且与具有绝缘表面的支撑衬底结合的半导体层的多个场效应晶体管之间插入有平坦化层。

    Manufacturing method of semiconductor device with element isolation region formed within
    5.
    发明授权
    Manufacturing method of semiconductor device with element isolation region formed within 有权
    在其内形成元件隔离区的半导体器件的制造方法

    公开(公告)号：US08513072B2

    公开(公告)日：2013-08-20

    申请号：US12968656

    申请日：2010-12-15

    申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Ikuko Kawamata

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11546 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/1255 ,  H01L29/66825 ,  H01L29/7881

    摘要： In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.

    摘要翻译： 为了在绝缘表面上形成多个半导体元件，在一个连续半导体层中，用作半导体元件的元件区域和具有通过重复PN结将元件区域彼此电隔离的功能的元件隔离区域。 通过选择性地添加至少一种或多种氧，氮和碳的杂质元素和赋予与相邻元件区相反的导电类型的杂质元素来形成元件隔离区域，以便电隔离元件 在一个连续的半导体层中彼此相交。

    Semiconductor device and method for manufacturing the same
    6.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08445905B2

    公开(公告)日：2013-05-21

    申请号：US13567451

    申请日：2012-08-06

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

    IPC分类号： H01L29/10

    CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

    摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

    摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。

    Display device and manufacturing method of the same
    7.
    发明授权
    Display device and manufacturing method of the same 有权
    显示装置及其制造方法相同

    公开(公告)号：US07768009B2

    公开(公告)日：2010-08-03

    申请号：US12196798

    申请日：2008-08-22

    申请人： Satoshi Kobayashi ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

    发明人： Satoshi Kobayashi ,  Ikuko Kawamata ,  Koji Dairiki ,  Shigeki Komori ,  Toshiyuki Isa ,  Shunpei Yamazaki

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/12

    CPC分类号： H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

    摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.

    摘要翻译： 一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。 在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区 在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

    Method for manufacturing display device with electrode having frame shape
    9.
    发明授权
    Method for manufacturing display device with electrode having frame shape 有权
    具有框架形状的电极的显示装置的制造方法

    公开(公告)号：US08520178B2

    公开(公告)日：2013-08-27

    申请号：US12844072

    申请日：2010-07-27

    申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

    IPC分类号： G02F1/1343 ,  B05D5/00 ,  B05D1/32 ,  B05D7/22

    CPC分类号： H01L21/76801 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L2924/0002 ,  H01L2924/00

    摘要： When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

    摘要翻译： 当形成导电层时，将含有导电材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分）和第一导电层（ 绝缘层）形成。 涂布含有导电材料的第二液体组合物，以填充具有框架形状的第一导电层内的空间，由此形成第二导电层。 第一导电层和第二导电层形成为彼此接触，并且第一导电层形成为围绕第二导电层。 因此，第一导电层和第二导电层可以用作一个连续导电层。

    Semiconductor device and method for manufacturing the same
    10.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08242496B2

    公开(公告)日：2012-08-14

    申请号：US12835117

    申请日：2010-07-13

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Ikuko Kawamata

    IPC分类号： H01L29/786

    CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

    摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

    摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，以及使用金属形成的驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。