公开(公告)号：US20070205423A1

公开(公告)日：2007-09-06

申请号：US11680287

申请日：2007-02-28

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tomoya Aoyama ,  Kohei Ohshima ,  Rie Matsubara ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tomoya Aoyama ,  Kohei Ohshima ,  Rie Matsubara ,  Hideaki Kuwabara

IPC分类号： H01L27/32

CPC分类号： H01L27/3225 ,  H01L27/286 ,  H01L27/3213 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3281 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object to provide a thin-type full-color display device with the long lifetime, inexpensively, in which desired emission luminance and desired color purity can be obtained at a low voltage. In a light-emitting device capable of full-color display, among a plurality of light-emitting elements emitting different emission colors (for example, colors of red (R), green (G), and blue (B)), at least one of the light-emitting elements of an emission color is a light-emitting element including an organic compound (an organic EL element), and the other light-emitting element of an emission color is a light-emitting element using an inorganic material as a light-emitting layer or a fluorescent layer (an inorganic EL element). It is to be noted that the organic EL element and the inorganic EL element are formed over the same substrate.

摘要翻译： 本发明的目的是提供一种寿命长，成本低廉的薄型全色显示装置，其中可以在低电压下获得期望的发光亮度和期望的色纯度。 在能够进行全色显示的发光装置中，在发射不同发光颜色（例如，红色（R），绿色（G）和蓝色（B）的颜色）的多个发光元件中至少 发光颜色的发光元件之一是包含有机化合物（有机EL元件）的发光元件，发光颜色的其他发光元件是使用无机材料的发光元件作为 发光层或荧光层（无机EL元件）。 应注意，有机EL元件和无机EL元件形成在相同的基板上。

公开(公告)号：US09112067B2

公开(公告)日：2015-08-18

申请号：US12766389

申请日：2010-04-23

申请人： Teruyuki Fujii ,  Kohei Ohshima ,  Junya Maruyama ,  Akihisa Shimomura

发明人： Teruyuki Fujii ,  Kohei Ohshima ,  Junya Maruyama ,  Akihisa Shimomura

IPC分类号： H01L31/0224 ,  H01L31/0296 ,  H01L31/02 ,  H01L31/028 ,  H01L31/068 ,  H01L31/075

CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/075 ,  Y02E10/50

摘要： An object relates to an electrode of a semiconductor device or a method for manufacturing a semiconductor device, which includes a bonding step, and problems are: (1) high resistance of a semiconductor device due to the use of an Al electrode, (2) formation of an alloy by Al and Si, (3) high resistance of a film formed by a sputtering method, and (4) defective bonding in a bonding step which is caused if a bonding surface has a large unevenness. A semiconductor device includes a metal substrate or a substrate provided with a metal film, a copper (Cu) plating film over and bonded to the metal substrate or the metal film by employing a thermocompression bonding method, a barrier film over the Cu plating film, a single crystal silicon film over the barrier film, and an electrode layer over the single crystal silicon film.

摘要翻译： 本发明涉及一种半导体器件的电极或半导体器件的制造方法，其包括接合工序，其问题是：（1）由于使用Al电极而导致的半导体器件的高电阻，（2） 通过Al和Si形成合金，（3）通过溅射法形成的膜的高电阻，以及（4）如果接合表面具有大的不平坦度时引起的接合步骤中的不良接合。 半导体装置包括金属基板或具有金属膜的金属基板，通过使用热压接法在金属基板或金属膜上结合的铜（Cu）电镀膜，在Cu镀膜上的阻挡膜， 阻挡膜上的单晶硅膜，以及单晶硅膜上的电极层。