公开(公告)号：US08809841B2

公开(公告)日：2014-08-19

申请号：US13303637

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

IPC分类号： H01L51/50

CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

公开(公告)号：US20120126212A1

公开(公告)日：2012-05-24

申请号：US13303637

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

公开(公告)号：US09929350B2

公开(公告)日：2018-03-27

申请号：US13405627

申请日：2012-02-27

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0059 ,  H01L51/0067 ,  H01L2251/5384 ,  H01L2251/552

摘要： A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

公开(公告)号：US20120217487A1

公开(公告)日：2012-08-30

申请号：US13405627

申请日：2012-02-27

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

IPC分类号： H01L51/54

CPC分类号： H01L51/0059 ,  H01L51/0067 ,  H01L2251/5384 ,  H01L2251/552

摘要： A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

摘要翻译： 发光元件包括在一对电极之间包括客体，n型主机和p型主机的发光层，其中三重激发态与基态之间的能量差之间的差异 n型主机（或p型主机），并且三重激发状态与客户的基态之间的能量差为0.15eV以上。 或者，在这种发光元件中，n型主机的LUMO电平高于客户的LUMO电平0.1eV以上，或p型主机的HOMO电平低于HOMO电平 的客人0.1 eV以上。

公开(公告)号：US09203044B2

公开(公告)日：2015-12-01

申请号：US13370672

申请日：2012-02-10

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki

IPC分类号： H01L29/20 ,  H01L21/00 ,  H01L51/50

CPC分类号： H01L51/5016 ,  H01L51/504 ,  H01L2251/5384

摘要： An organic light-emitting element having high efficiency and long lifetime is provided. An organic light-emitting body is provided which includes a host having a high electron-transport property (n-type host), a host having a high hole-transport property (p-type host), and a guest such as an iridium complex and in which the n-type host and the p-type host are located so as to be adjacent to each other. When an electron and a hole are injected to such a light-emitting body, the electron is trapped by the n-type host and the hole is trapped by the p-type host. Then, both the electron and the hole are injected to the guest, and thus the guest is brought into an excited state. In this process, less thermal deactivation occurs and the working rate of the guest is high; thus, highly efficient light emission can be obtained.

摘要翻译： 提供了高效率且寿命长的有机发光元件。 提供一种有机发光体，其包括具有高电子传输性质的主体（n型主体），具有高空穴传输性质的主体（p型主体））和诸如铱络合物的客体 并且其中n型主机和p型主机位于彼此相邻的位置。 当向这种发光体注入电子和空穴时，电子被n型主体捕获，孔被p型主体捕获。 然后，将电子和孔都注入到客体中，从而使客人处于激发状态。 在这个过程中，发生较少的热失活，客人的工作速度很高; 因此，可以获得高效的发光。

公开(公告)号：US08642412B2

公开(公告)日：2014-02-04

申请号：US12906175

申请日：2010-10-18

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masahiro Takahashi

IPC分类号： H01L21/385

CPC分类号： H01L21/02664 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L23/564 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

摘要翻译： 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。

公开(公告)号：US08853680B2

公开(公告)日：2014-10-07

申请号：US13429560

申请日：2012-03-26

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka

IPC分类号： H01L29/08 ,  H01L21/00 ,  H01L51/50 ,  H01L51/00 ,  H01L27/32

CPC分类号： H01L51/504 ,  H01L27/3209 ,  H01L51/0059 ,  H01L51/0061 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5072 ,  H01L2251/5346 ,  H01L2251/5376 ,  H01L2251/5384

摘要： A light-emitting element having extremely high efficiency of approximately 25% is provided. The light-emitting element includes a light-emitting layer which contains a phosphorescent guest, an n-type host, and a p-type host, where the light-emitting layer is interposed between an n-type layer including the n-type host and a p-type layer including the p-type host, and where the n-type host and the p-type host are able to form an exciplex in the light-emitting layer. The light-emitting element exhibits an extremely high emission efficiency (power efficiency of 74.3 lm/W, external quantum efficiency of 24.5%, energy efficiency of 19.3%) at a low driving voltage (2.6 V) at which luminance of 1200 cd/m2 is attainable.

摘要翻译： 提供了具有极高效率约25％的发光元件。 发光元件包括含有磷光客体，n型主体和p型主体的发光层，其中发光层插入在包括n型主体的n型层之间 以及包含p型主体的p型层，其中n型主体和p型主体能够在发光层中形成激光复合物。 在1200cd / m2的亮度的低驱动电压（2.6V）下，发光元件显示出极高的发光效率（74.3lm / W的功率效率，24.5％的外部量子效率，能量效率为19.3％） 是可以实现的

公开(公告)号：US08736157B2

公开(公告)日：2014-05-27

申请号：US13433508

申请日：2012-03-29

申请人： Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Shunpei Yamazaki

发明人： Satoshi Seo ,  Satoko Shitagaki ,  Nobuharu Ohsawa ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Shunpei Yamazaki

IPC分类号： H05B33/14

CPC分类号： H01L51/5028 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5024 ,  H05B33/14

摘要： To provide a light-emitting element with high emission efficiency or long lifetime, in which the use amount of a phosphorescent compound is small. To provide a light-emitting element including a light-emitting layer between a pair of electrodes, wherein the light-emitting layer includes a phosphorescent compound, a first organic compound, and a second organic compound, and the combination of the first organic compound and the second organic compound forms an exciplex. The light-emitting element transfers energy by utilizing the overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency, even when the concentration of the phosphorescent compound is low.

摘要翻译： 为了提供磷光化合物的使用量小的发光效率高，寿命长的发光元件。 为了提供一种在一对电极之间包括发光层的发光元件，其中发光层包括磷光化合物，第一有机化合物和第二有机化合物，以及第一有机化合物和 第二有机化合物形成激元复合物。 发光元件利用激光复合物的发射光谱和磷光化合物的吸收光谱之间的重叠而传递能量，因此即使当磷光化合物的浓度低时，也具有高的能量转移效率。

公开(公告)号：US09029191B2

公开(公告)日：2015-05-12

申请号：US12888825

申请日：2010-09-23

申请人： Shunpei Yamazaki ,  Takahiro Tsuji ,  Kunihiko Suzuki

发明人： Shunpei Yamazaki ,  Takahiro Tsuji ,  Kunihiko Suzuki

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02667 ,  H01L22/14 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

摘要： An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

摘要翻译： 本发明的目的是提供一种使用具有稳定电特性的氧化物半导体层的高可靠性薄膜晶体管。 在使用氧化物半导体层的薄膜晶体管中，BT测试前后的薄膜晶体管的阈值电压的变化量为2V以下，优选为1.5V以下，更优选为1 V以下，由此可以制造具有高可靠性和稳定电特性的半导体器件。 特别地，在作为半导体器件的一个实施例的显示装置中，可以降低由于阈值电压的变化引起的诸如显示不均的故障。

公开(公告)号：US08319218B2

公开(公告)日：2012-11-27

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。