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公开(公告)号：US20090186469A1
公开(公告)日：2009-07-23
申请号：US12416185
申请日：2009-04-01
IPC分类号： H01L21/322 , H01L21/423
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US08003958B2
公开(公告)日：2011-08-23
申请号：US12416185
申请日：2009-04-01
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US20080070389A1
公开(公告)日：2008-03-20
申请号：US11946125
申请日：2007-11-28
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US07118996B1
公开(公告)日：2006-10-10
申请号：US09235143
申请日：1999-01-21
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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公开(公告)号：US20060006348A1
公开(公告)日：2006-01-12
申请号：US11221956
申请日：2005-09-09
IPC分类号： G21K5/10
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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公开(公告)号：US06734446B1
公开(公告)日：2004-05-11
申请号：US09696863
申请日：2000-10-25
IPC分类号： H01J37317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。离子电流是 形成为具有线性截面构造，并且通过在与离子电流的截面的纵向方向基本垂直的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US08344336B2
公开(公告)日：2013-01-01
申请号：US13208581
申请日：2011-08-12
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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公开(公告)号：US20120021592A1
公开(公告)日：2012-01-26
申请号：US13208581
申请日：2011-08-12
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US5892235A
公开(公告)日：1999-04-06
申请号：US855818
申请日：1997-05-12
IPC分类号： H01J37/317
CPC分类号： H01J37/3171
摘要： An apparatus for doping a material includes an ion current which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 用于掺杂材料的装置包括特别适用于处理具有大面积的衬底的离子电流。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US07521699B2
公开(公告)日：2009-04-21
申请号：US11946125
申请日：2007-11-28
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。
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