公开(公告)号：US07270012B2

公开(公告)日：2007-09-18

申请号：US11237897

申请日：2005-09-29

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US07045843B2

公开(公告)日：2006-05-16

申请号：US10788369

申请日：2004-03-01

申请人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

发明人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

IPC分类号： H01L27/108 ,  H01L29/76

CPC分类号： H01H59/0009 ,  H01H2001/0042 ,  H01H2001/0063

摘要： Disclosed herein is a latchable MEMS switch device capable of retaining its ON or OFF state even after the external power source is turned off. It is unnecessary not only to introduce novel materials such as magnetic material but also to form complicated structures. At least one of the cantilever and pull-down electrode of a cold switch is connected to a second MEMS switch. A capacitor between the cantilever and pull-down electrode of the cold switch is charged by the second MEMS switch. Thereafter since the cold switch is isolated in the device, the charge remains stored. Therefore, the cold switch can remain in the ON state since the charge continues to create electrostatic attraction between the cantilever and the pull-down electrode.

摘要翻译： 这里公开了即使在外部电源关闭之后也能够保持其接通或关断状态的可闭锁的MEMS开关装置。 不仅不需要引入诸如磁性材料的新型材料，而且形成复杂的结构。 冷开关的悬臂和下拉电极中的至少一个连接到第二MEMS开关。 冷开关的悬臂和下拉电极之间的电容器由第二MEMS开关充电。 此后，由于冷开关在器件中隔离，所以电荷保持存储。 因此，由于电荷继续在悬臂与下拉电极之间产生静电引力，所以冷开关可以保持在导通状态。

公开(公告)号：US20060070449A1

公开(公告)日：2006-04-06

申请号：US11237897

申请日：2005-09-29

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US07451656B2

公开(公告)日：2008-11-18

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00 ,  G01L9/16

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US20070262401A1

公开(公告)日：2007-11-15

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： H01L29/84

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

公开(公告)号：US20070102831A1

公开(公告)日：2007-05-10

申请号：US10583862

申请日：2003-12-24

申请人： Shuntaro Machida ,  Natsuki Yokoyama ,  Yasushi Goto

发明人： Shuntaro Machida ,  Natsuki Yokoyama ,  Yasushi Goto

IPC分类号： H01L21/66 ,  H01L23/28

CPC分类号： H01L21/78 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention has a object to enhance the yield and facilitate bonding in a device provided with micro-mechanical elements formed by a MEMS technique. According to the inveniton, when a first wafer having a plurality of areas in which micro-mechanical elements and pads are formed and a second wafer in which an aperture is formed are to be glued together, the aperture is shared by the pads in the plurality of areas. This makes it possible for individual chips, into which the wafer is cut out, to be bonded with a conventionally used wire bonder because a sufficient aperture is provided above the pads. Further according to the invention, at the step of dicing two glued wafers into individual chips, the two wafers are separately cut. This enables chipping of the wafers to be reduced and the yield at the dicing step to be enhanced.

摘要翻译： 本发明的目的是提高在通过MEMS技术形成的微机械元件的装置中的产量和促进结合。 根据本发明，当具有其中形成有微机械元件和焊盘的多个区域的第一晶片和其中形成有孔的第二晶片将被胶合在一起时，该孔由多个焊盘共享 的地区。 这使得可以用常规使用的引线接合器将切割出晶片的各个芯片结合，因为在焊盘上方设置足够的孔。 此外，根据本发明，在将两个胶合晶片切割成单个芯片的步骤中，两个晶片被分开切割。 这样可以削减晶片的碎裂并提高切割步骤的成品率。

公开(公告)号：US20050067621A1

公开(公告)日：2005-03-31

申请号：US10788369

申请日：2004-03-01

申请人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

发明人： Yasushi Goto ,  Shuntaro Machida ,  Natsuki Yokoyama

IPC分类号： H01L21/82 ,  H01H59/00 ,  H01L21/00

CPC分类号： H01H59/0009 ,  H01H2001/0042 ,  H01H2001/0063

摘要： Disclosed herein is a latchable MEMS switch device capable of retaining its ON or OFF state even after the external power source is turned off. It is unnecessary not only to introduce novel materials such as magnetic material but also to form complicated structures. At least one of the cantilever and pull-down electrode of a cold switch is connected to a second MEMS switch. A capacitor between the cantilever and pull-down electrode of the cold switch is charged by the second MEMS switch. Thereafter since the cold switch is isolated in the device, the charge remains stored. Therefore, the cold switch can remain in the ON state since the charge continues to create electrostatic attraction between the cantilever and the pull-down electrode.

摘要翻译： 这里公开了即使在外部电源关闭之后也能够保持其接通或关断状态的可闭锁的MEMS开关装置。 不仅不需要引入诸如磁性材料的新型材料，而且形成复杂的结构。 冷开关的悬臂和下拉电极中的至少一个连接到第二MEMS开关。 冷开关的悬臂和下拉电极之间的电容器由第二MEMS开关充电。 此后，由于冷开关在器件中隔离，所以电荷保持存储。 因此，由于电荷继续在悬臂与下拉电极之间产生静电引力，所以冷开关可以保持在导通状态。

公开(公告)号：US07405588B2

公开(公告)日：2008-07-29

申请号：US10933272

申请日：2004-09-03

申请人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

发明人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

IPC分类号： H03K19/173

CPC分类号： G11C23/00 ,  H03K19/1776 ,  H03K19/1778

摘要： The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.

摘要翻译： 本发明涉及可以改变功能的LSI，特别是实现通过使用MEMS开关改变电路的连接来改变功能的系统LSI。 可以保持状态并且表现出最佳缝合性能的双稳态MEMS开关，即开关在导通状态下具有几欧姆或更小的非常小的电阻，并且在断开状态下具有无限电阻; 被雇用。 通过使用CMOS半导体的布线层来形成功能可以在操作期间改变的元件来形成MEMS开关。 实现了具有高自由度，高速度，小面积化的高自由度的半导体装置。

公开(公告)号：US07199022B2

公开(公告)日：2007-04-03

申请号：US10814627

申请日：2004-04-01

申请人： Kan Yasui ,  Toshiyuki Mine ,  Yasushi Goto ,  Natsuki Yokoyama

发明人： Kan Yasui ,  Toshiyuki Mine ,  Yasushi Goto ,  Natsuki Yokoyama

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  Y10S438/907

摘要： In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring in an isolation trench, the silicon nitride film liner is first deposited on the inner wall of the trench formed on a silicon substrate. The upper surface of a first embedded insulator film for filling the inside of the trench is recessed downward so as to expose an upper end portion of the silicon nitride film liner. Next, the exposed portion of the silicon nitride film liner is converted into non-silicon-nitride type insulator film, such as a silicon oxide film. A second embedded insulator film is then deposited on the upper portion of the first embedded insulator film, and the deposited surface is then planarized.

摘要翻译： 为了实现根据本发明的隔离沟槽形成方法，其中可以容易地控制氮化硅膜衬垫的结构并且允许器件特征长度的减小和在隔离沟槽中发生的应力的减小， 氮化硅膜衬垫首先沉积在形成在硅衬底上的沟槽的内壁上。 用于填充沟槽内部的第一嵌入式绝缘体膜的上表面向下凹入以暴露氮化硅膜衬垫的上端部分。 接下来，将氮化硅膜衬垫的露出部分转换成诸如氧化硅膜的非氮化硅型绝缘膜。 然后将第二嵌入式绝缘膜沉积在第一嵌入式绝缘膜的上部上，然后将沉积的表面平坦化。

公开(公告)号：US07193281B2

公开(公告)日：2007-03-20

申请号：US11296289

申请日：2005-12-08

申请人： Jiro Yugami ,  Natsuki Yokoyama ,  Toshiyuki Mine ,  Yasushi Goto

发明人： Jiro Yugami ,  Natsuki Yokoyama ,  Toshiyuki Mine ,  Yasushi Goto

IPC分类号： H01L29/76

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823456 ,  H01L21/823462 ,  H01L29/42368 ,  H01L29/495 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： There is provided a semiconductor device configured as follows. On a semiconductor substrate, a titanium oxide film which is an insulating film having a higher dielectric constant than that of a silicon dioxide film is formed as a gate insulating film, and a gate electrode is disposed thereon, resulting in a field effect transistor. The end portions in the gate length direction of the titanium oxide film are positioned inwardly from the respective end portions on the source side and on the drain side of the gate electrode, and the end portions of the titanium oxide film are positioned in a region in which the gate electrode overlaps with the source region and the drain region in plan configuration. This semiconductor device operates at a high speed, and is excellent in short channel characteristics and driving current. Further, in the semiconductor device, the amount of metallic elements introduced into a silicon substrate is small.

摘要翻译： 提供如下配置的半导体器件。 在半导体衬底上形成作为绝缘膜的介电常数高于二氧化硅膜的氧化钛膜作为栅极绝缘膜，并且在其上设置栅电极，得到场效应晶体管。 氧化钛膜的栅极长度方向的端部位于栅电极的源极侧和漏极侧的各端部的内侧，氧化钛膜的端部位于 其中栅电极以平面构型与源区和漏区重叠。 该半导体器件以高速度工作，并且具有优异的短沟道特性和驱动电流。 此外，在半导体器件中，导入硅衬底的金属元素的量小。