公开(公告)号：US06388474B2

公开(公告)日：2002-05-14

申请号：US09860587

申请日：2001-05-21

申请人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

发明人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

IPC分类号： H03K19094

CPC分类号： H03K19/1736 ,  G06F17/505 ,  H03K19/1737

摘要： For the relation between the first and second pass-transistor circuits (PT1, PT2), the output signal of the preceding-stage is supplied to the gate of the succeeding-stage, and for the relation between the second and third pass-transistor circuits (PT2, PT3), the output signal of the preceding-stage is supplied to the source-drain path of the succeeding-stage. The first pass-transistor circuit (PT1) receives on its first input node (In1) and second input node (In2) the first input signal and the second input signal that are logically independent from each other. This logic circuit requires a smaller number of transistors and is capable of reducing the power consumption and delay and accomplishing an intricate logic function.

摘要翻译： 对于第一和第二通过晶体管电路（PT1，PT2）之间的关系，前级的输出信号被提供给后级的栅极，并且对于第二和第三通过晶体管电路之间的关系 （PT2，PT3），将前级的输出信号提供给后级的源极 - 漏极路径。 第一通过晶体管电路（PT1）在第一输入节点（In1）和第二输入节点（In2）上接收逻辑上彼此独立的第一输入信号和第二输入信号。 该逻辑电路需要较少数量的晶体管，并且能够降低功耗并延迟并完成复杂的逻辑功能。

公开(公告)号：US6049232A

公开(公告)日：2000-04-11

申请号：US225291

申请日：1999-01-05

申请人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

发明人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

IPC分类号： G06F17/50 ,  H03K19/173 ,  H03K19/0948

CPC分类号： H03K19/1736 ,  G06F17/505 ,  H03K19/1737

摘要： For the relation between the first and second pass-transistor circuits (PT1, PT2), the output signal of the preceding-stage is supplied to the gate of the succeeding-stage, and for the relation between the second and third pass-transistor circuits (PT2, PT3), the output signal of the preceding-stage is supplied to the source-drain path of the succeeding-stage. The first pass-transistor circuit (PT1) receives on its first input node (In1) and second input node (In2) the first input signal and the second input signal that are logically independent from each other. This logic circuit requires a smaller number of transistors and is capable of reducing the power consumption and delay and accomplishing an intricate logic function.

公开(公告)号：US5712792A

公开(公告)日：1998-01-27

申请号：US633486

申请日：1996-04-17

申请人： Shunzo Yamashita ,  Kazuo Yano ,  Yasuhiko Sasaki ,  Koichi Seki

发明人： Shunzo Yamashita ,  Kazuo Yano ,  Yasuhiko Sasaki ,  Koichi Seki

IPC分类号： G06F17/50

CPC分类号： G06F17/505

摘要： In order to effectively explore a binary decision diagram for synthesizing a logic circuit, a tentative circuit comprised of AND gates and OR gates is synthesized from a logic function. The number of gates in this circuit to which two input variables are simultaneously associated are counted and used as correlation between the two input variables. A correlation matrix for correlation among all of the input variables is generated. The input variables are sequentially grouped from a set of input variables with strongest correlation in the correlation matrix: These groups are registered into a correlation tree, and an intergroup correlation tree is produced. These groups are sequentially selected from a group with the least correlation, and the intragroup order of the selected group is changed from one to another. A binary decision diagram is explored which satisfies the most appropriate condition in that group (such as the minimum number of nodes, the minimum delay, and the minimum area). The above processes repeated for all groups. Each node of the binary decision diagram thus obtained is substituted by a selector and each selector circuit is substituted by a circuit of a transistor level.

摘要翻译： 为了有效地研究用于合成逻辑电路的二进制判定图，从逻辑功能合成了由与门和或门组成的暂定电路。 两个输入变量同时关联的该电路中的门数被计数并用作两个输入变量之间的相关。 生成所有输入变量之间相关的相关矩阵。 输入变量从相关矩阵中具有最强相关性的一组输入变量顺序分组：将这些组注册到相关树中，并产生一个组间相关树。 从具有最小相关性的组中顺序地选择这些组，并且所选择的组的组内顺序从一个改变为另一组。 探讨了满足该组中最合适条件（如最小节点数，最小延迟和最小面积）的二进制决策图。 上述过程对所有组重复。 由此获得的二进制判定图的每个节点由选择器代替，并且每个选择器电路被晶体管电平的电路代替。

公开(公告)号：US5923189A

公开(公告)日：1999-07-13

申请号：US633053

申请日：1996-04-16

申请人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

发明人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

IPC分类号： G06F17/50 ,  H03K19/173 ,  H03K19/0948

CPC分类号： H03K19/1736 ,  G06F17/505 ,  H03K19/1737

摘要： For the relation between the first and second pass-transistor circuits (PT1, PT2), the output signal of the preceding-stage is supplied to the gate of the succeeding-stage, and for the relation between the second and third pass-transistor circuits (PT2, PT3), the output signal of the preceding-stage is supplied to the source-drain path of the succeeding-stage. The first pass-transistor circuit (PT1) receives on its first input node (In1) and second input node (In2) the first input signal and the second input signal that are logically independent from each other. This logic circuit requires a smaller number of transistors and is capable of reducing the power consumption and delay and accomplishing an intricate logic function.

摘要翻译： 对于第一和第二通过晶体管电路（PT1，PT2）之间的关系，前级的输出信号被提供给后级的栅极，并且对于第二和第三通过晶体管电路之间的关系 （PT2，PT3），将前级的输出信号提供给后级的源极 - 漏极路径。 第一通过晶体管电路（PT1）在第一输入节点（In1）和第二输入节点（In2）上接收逻辑上彼此独立的第一输入信号和第二输入信号。 该逻辑电路需要较少数量的晶体管，并且能够降低功耗并延迟并完成复杂的逻辑功能。

公开(公告)号：US06259276B1

公开(公告)日：2001-07-10

申请号：US09542620

申请日：2000-04-04

申请人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

发明人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

IPC分类号： H03K19094

CPC分类号： H03K19/1736 ,  G06F17/505 ,  H03K19/1737

摘要： For the relation between the first and second pass-transistor circuits (PT1, PT2), the output signal of the preceding-stage is supplied to the gate of the succeeding-stage, and for the relation between the second and third pass-transistor circuits (PT2, PT3), the output signal of the preceding-stage is supplied to the source-drain path of the succeeding-stage. The first pass-transistor circuit (PT1) receives on its first input node (In1) and second input node (In2) the first input signal and the second input signal that are logically independent from each other. This logic circuit requires a smaller number of transistors and is capable of reducing the power consumption and delay and accomplishing an intricate logic function.

摘要翻译： 对于第一和第二通过晶体管电路（PT1，PT2）之间的关系，前级的输出信号被提供给后级的栅极，并且对于第二和第三通过晶体管电路之间的关系 （PT2，PT3），将前级的输出信号提供给后级的源极 - 漏极路径。 第一通过晶体管电路（PT1）在第一输入节点（In1）和第二输入节点（In2）上接收逻辑上彼此独立的第一输入信号和第二输入信号。 该逻辑电路需要较少数量的晶体管，并且能够降低功耗并延迟并完成复杂的逻辑功能。

公开(公告)号：US06845349B1

公开(公告)日：2005-01-18

申请号：US09659735

申请日：2000-09-11

申请人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

发明人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

IPC分类号： G06F17/50 ,  H03K19/173 ,  G06G7/62

CPC分类号： H03K19/1737 ,  G06F17/505 ,  H03K19/1736

摘要： A program for automatically designing a logic circuit used for a method of designing a pass transistor circuit, by which the number of required transistors, delay time, power consumption and chip area of the pass transistor circuit is reduced. The program executes the following steps: a) receiving inputted logic functions which define the logical relationship between the inputs and the outputs, and an inputted target specification, b) generating a binary decision diagram from part of the logic functions received at (a), c) replacing the diagram nodes formed at (b) with pass transistor circuit, d) judging whether or not the simulation characteristics of the pass transistor circuit described in (c) meets the target specification described in (a), and executing the following steps when the judgment is “no”, e) replacing part of the diagram generated by the procedure described in (b) with another diagram, f) allocating a new binary decision diagram to the control inputs of the nodes of the replaced diagram prepared at (e), and g) repeating the steps (c) and (d) for the diagram prepared at (f).

摘要翻译： 用于自动设计用于设计传输晶体管电路的方法的逻辑电路的程序，由此降低了所需晶体管的数量，延迟时间，功耗以及传输晶体管电路的芯片面积。 该程序执行以下步骤：a）接收定义输入和输出之间的逻辑关系的输入逻辑功能以及输入的目标规范，b）从（a）中接收的部分逻辑函数生成二进制判定图， c）用传统晶体管电路代替（b）形成的图形节点，d）判断（c）中描述的传输晶体管电路的仿真特性是否满足（a）中描述的目标规范，并执行以下步骤 当判断为“否”时，e）用另一个图替换由（b）中描述的过程产生的图的一部分，f）将新的二进制决策图分配给在 e），g）对（f）制备的图重复步骤（c）和（d）。

公开(公告)号：US06260185B1

公开(公告)日：2001-07-10

申请号：US08930219

申请日：1997-10-20

申请人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

发明人： Yasuhiko Sasaki ,  Kazuo Yano ,  Shunzo Yamashita ,  Koichi Seki

IPC分类号： G06G748

CPC分类号： G06F17/505 ,  H03K19/1736 ,  H03K19/1737

摘要： A program for automatically designing a logic circuit used for a method of designing a pass transistor circuit, by which the number of required transistors, delay time, power consumption and chip area of the pass transistor circuit is reduced. The program executes the following steps: a) receiving inputted logic functions which define the logical relationship between the inputs and the outputs, and an inputted target specification, b) generating a binary decision diagram from part of the logic functions received at (a), c) replacing the diagram nodes formed at (b) with pass transistor circuit, d) judging whether or not the simulation characteristics of the pass transistor circuit described in (c) meets the target specification described in (a), and executing the following steps when the judgment is “no”, e) replacing part of the diagram generated by the procedure described in (b) with another diagram, f) allocating a new binary decision diagram to the control inputs of the nodes of the replaced diagram prepared at (e), and g) repeating the steps (c) and (d) for the diagram prepared at (f).

摘要翻译： 用于自动设计用于设计传输晶体管电路的方法的逻辑电路的程序，由此降低了所需晶体管的数量，延迟时间，功耗以及传输晶体管电路的芯片面积。 该程序执行以下步骤：a）接收定义输入和输出之间的逻辑关系的输入逻辑功能以及输入的目标规范，b）从（a）中接收的部分逻辑函数生成二进制判定图， c）用传统晶体管电路代替（b）形成的图形节点，d）判断（c）中描述的传输晶体管电路的仿真特性是否满足（a）中描述的目标规范，并执行以下步骤 当判断为“否”时，e）用另一个图替换由（b）中描述的过程产生的图的一部分，f）将新的二进制决策图分配给在 e），g）对（f）制备的图重复步骤（c）和（d）。

公开(公告)号：US06337293B1

公开(公告)日：2002-01-08

申请号：US09332445

申请日：1999-06-14

申请人： Tomoyuki Ishii ,  Kazuo Yano ,  Koichi Seki ,  Toshiyuki Mine ,  Takashi Kobayashi

发明人： Tomoyuki Ishii ,  Kazuo Yano ,  Koichi Seki ,  Toshiyuki Mine ,  Takashi Kobayashi

IPC分类号： H01L2100

CPC分类号： H01L29/7887 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/685 ,  H01L29/7883 ,  Y10S438/962

摘要： A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noise. In order to accomplish this a control electrode is formed so as to cover the entirety of thin film regions connecting low-resistance regions. As a result, the element can have a small size and can store information with high density. Thus, a highly integrated, low power consumption non-volatile memory device can be realized with reduced size. A method of forming a memory element is also disclosed including performing the following steps of forming a first insulating layer, a second insulating layer, a first conductive layer and a layer of amorphous silicon. The amorphous silicon layer is crystallized to a polycrystalline silicon film. Semiconductor drains are deposited to form charge trapping and storage regions. A fourth insulating layer is deposited over the drains and a second conductive layer is deposited over a layer of silicon dioxide to form a control electrode of the memory element.

摘要翻译： 公开了一种半导体量子存储器元件，其可以容易地在多个存储元件之间共享端子，并且可以通过高电流并且抵抗噪声。 为了实现这一点，形成控制电极以覆盖连接低电阻区域的整个薄膜区域。 因此，该元件可以具有小尺寸并且可以高密度地存储信息。 因此，可以以减小的尺寸实现高度集成的低功耗非易失性存储器件。 还公开了一种形成存储元件的方法，包括执行以下步骤：形成第一绝缘层，第二绝缘层，第一导电层和非晶硅层。 非晶硅层结晶成多晶硅膜。 沉积半导体漏极以形成电荷捕获和存储区域。 在漏极上沉积第四绝缘层，并且在二氧化硅层上沉积第二导电层以形成存储元件的控制电极。

公开(公告)号：US5960266A

公开(公告)日：1999-09-28

申请号：US878206

申请日：1997-06-18

申请人： Tomoyuki Ishii ,  Kazuo Yano ,  Koichi Seki ,  Toshiyuki Mine ,  Takashi Kobayashi

发明人： Tomoyuki Ishii ,  Kazuo Yano ,  Koichi Seki ,  Toshiyuki Mine ,  Takashi Kobayashi

IPC分类号： H01L27/115 ,  H01L27/12 ,  H01L29/68 ,  H01L29/788 ,  H01L21/00 ,  H01L21/31 ,  H01L21/469 ,  H01L21/84

CPC分类号： H01L29/7887 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/685 ,  H01L29/7883 ,  Y10S438/962

摘要： A quantum semiconductor memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is resistant to interference from noises. In order to accomplish this a control electrode is formed to cover the entirety of thin film regions connecting low-resistance regions. As a result, the element can have a small size and can store information with high density. Thus, a highly integrated, low power consumption non-volatile quantum memory device can be realized with reduced size.

摘要翻译： 公开了一种量子半导体存储元件，其可以容易地在多个存储元件之间共享端子，并且可以通过高电流并且能够抵抗来自噪声的干扰。 为了实现这一点，形成控制电极以覆盖连接低电阻区域的整个薄膜区域。 因此，该元件可以具有小尺寸并且可以高密度地存储信息。 因此，可以以减小的尺寸实现高度集成的低功耗非易失性量子存储器件。

公开(公告)号：US20050032276A1

公开(公告)日：2005-02-10

申请号：US10936481

申请日：2004-09-09

申请人： Tomoyuki Ishii ,  Kazuo Yano ,  Koichi Seki ,  Toshiyuki Mine ,  Takashi Kobayashi

发明人： Tomoyuki Ishii ,  Kazuo Yano ,  Koichi Seki ,  Toshiyuki Mine ,  Takashi Kobayashi

IPC分类号： H01L27/115 ,  H01L27/12 ,  H01L29/68 ,  H01L29/788 ,  H01L21/00 ,  H01L21/82 ,  H01L21/8236

CPC分类号： H01L29/7887 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/685 ,  H01L29/7883 ,  Y10S438/962

摘要： A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noises. In order to accomplish this a control electrode is formed so as to cover the entirety of thin film regions connecting low-resistance regions. As a result, the element can have a small size and can store information with high density. Thus, a highly integrated, low power consumption non-volatile memory device can be realized with reduced size. A method of forming a memory element is also disclosed including performing the following steps of forming a first insulating layer, a second insulating layer, a first conductive layer and a layer of amorphous silicon. The amorphous silicon layer is crystallized to a polycrystalline silicon film. Semiconductor drains are deposited to form charge trapping and storage regions. A fourth insulating layer is deposited over the drains and a second conductive layer is deposited over a layer of silicon dioxide to form a control electrode of the memory element.

摘要翻译： 公开了一种半导体量子存储器元件，其可以容易地在多个存储元件之间共享端子，并且可以通过高电流并且抵抗噪声。 为了实现这一点，形成控制电极以覆盖连接低电阻区域的整个薄膜区域。 因此，该元件可以具有小尺寸并且可以高密度地存储信息。 因此，可以以减小的尺寸实现高度集成的低功耗非易失性存储器件。 还公开了一种形成存储元件的方法，包括执行以下步骤：形成第一绝缘层，第二绝缘层，第一导电层和非晶硅层。 非晶硅层结晶成多晶硅膜。 沉积半导体漏极以形成电荷捕获和存储区域。 在漏极上沉积第四绝缘层，并且在二氧化硅层上沉积第二导电层以形成存储元件的控制电极。