公开(公告)号：US20100181289A1

公开(公告)日：2010-07-22

申请号：US12749552

申请日：2010-03-30

申请人： Sidlgata V. Sreenivasan ,  Michael P.C. Watts

发明人： Sidlgata V. Sreenivasan ,  Michael P.C. Watts

IPC分类号： C23F1/00 ,  B28B1/14

CPC分类号： G03F7/0002 ,  B29C59/02 ,  B82Y10/00 ,  B82Y40/00

摘要： The present invention is directed to a method of forming an imprinting layer on a substrate including high resolution features, and transferring the features into a solidified region of the substrate. Desired thickness of the residual layer may be minimized in addition to visco-elastic behavior of the material.

摘要翻译： 本发明涉及一种在包括高分辨率特征的基板上形成压印层的方法，并将特征转移到基板的固化区域中。 除了材料的粘弹性行为之外，残留层的期望厚度可以最小化。

公开(公告)号：US20100201042A1

公开(公告)日：2010-08-12

申请号：US12762658

申请日：2010-04-19

申请人： Sidlgata V. Sreenivasan ,  Byung J. Choi ,  Norman E. Schumaker ,  Ronald D. Voisin ,  Michael P.C. Watts ,  Mario J. Meissl

发明人： Sidlgata V. Sreenivasan ,  Byung J. Choi ,  Norman E. Schumaker ,  Ronald D. Voisin ,  Michael P.C. Watts ,  Mario J. Meissl

IPC分类号： B29C59/16 ,  B29C59/02 ,  B29C59/00

CPC分类号： B81C1/0046 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002

摘要： Methods of forming continuous layers on regions of a substrate are described. Generally, an imprint lithography template may contact liquid positioned on the substrate. The liquid may be cured forming a masking layer, and the imprint lithography template separated from the masking layer. Prior to separation, pressurized gas and/or vacuum may be applied between the template and the substrate. Additionally, during separation, pressurized gas and/or vacuum may be applied between the template and the substrate.

摘要翻译： 描述了在衬底区域上形成连续层的方法。 通常，压印光刻模板可接触位于基底上的液体。 液体可以固化形成掩模层，并且压印光刻模板与掩模层分离。 在分离之前，加压气体和/或真空可以施加在模板和基底之间。 此外，在分离期间，加压气体和/或真空可以施加在模板和基底之间。

公开(公告)号：US20080097065A1

公开(公告)日：2008-04-24

申请号：US11508765

申请日：2006-08-23

申请人： Frank Y. Xu ,  Michael N. Miller ,  Michael P.C. Watts

发明人： Frank Y. Xu ,  Michael N. Miller ,  Michael P.C. Watts

IPC分类号： C08G77/04

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

摘要翻译： 本发明包括用作下层的蚀刻掩模的含硅材料用组合物。 更具体地，含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。 为此，在本发明的一个实施方案中，组合物包括羟基官能的硅氧烷组分，交联组分，催化剂组分和溶剂。 该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻，同时最小化与凹陷叠加的段的蚀刻，并且因此允许形成原位硬化的掩模 通过含硅材料，硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

公开(公告)号：US20110140306A1

公开(公告)日：2011-06-16

申请号：US13029805

申请日：2011-02-17

申请人： Frank Y. Xu ,  Michael N. Miller ,  Michael P.C. Watts

发明人： Frank Y. Xu ,  Michael N. Miller ,  Michael P.C. Watts

IPC分类号： B29C59/02 ,  C08L83/06 ,  C08K5/101 ,  C08K5/06 ,  C08K5/05 ,  C08K5/103 ,  C08K5/07

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile.

摘要翻译： 本发明包括用作下层的蚀刻掩模的含硅材料用组合物。 更具体地，含硅材料可以用作包括突起和凹陷的图案化印记层的蚀刻掩模。 为此，在本发明的一个实施方案中，组合物包括羟基官能的硅氧烷组分，交联组分，催化剂组分和溶剂。 该组合物允许含硅材料与图案化压印层的突起和段的叠加选择性地蚀刻，同时最小化与凹陷叠加的段的蚀刻，并且因此允许形成原位硬化的掩模 通过含硅材料，硬化的掩模和图案化的压印层形成基本平坦化的轮廓。

公开(公告)号：US20080303187A1

公开(公告)日：2008-12-11

申请号：US11965802

申请日：2007-12-28

申请人： Nicholas A. Stacey ,  Edward Brian Fletcher ,  Michael N. Miller ,  Michael P.C. Watts

发明人： Nicholas A. Stacey ,  Edward Brian Fletcher ,  Michael N. Miller ,  Michael P.C. Watts

IPC分类号： B29C59/00 ,  B44C1/22

CPC分类号： B29C43/021 ,  B29C43/003 ,  B29C2043/025 ,  B29C2043/142 ,  B29C2043/3438 ,  B29C2043/5833 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24802

摘要： An imprint lithography template with an active area arranged to receive imprinting material during an imprint lithography process and a non-active area adjacent the active area is described. At least a portion of the non-active area is treated to inhibit flow of the imprinting material from the active area to the non-active area during the imprint lithography process.

摘要翻译： 具有布置成在压印光刻工艺期间接收压印材料的有源区域和与有源区域相邻的非有源区域的压印光刻模板被描述。 处理非活性区域的至少一部分以在压印光刻工艺期间抑制压印材料从有源区域流向非有源区域。

公开(公告)号：US20110256355A1

公开(公告)日：2011-10-20

申请号：US13172350

申请日：2011-06-29

申请人： Frank Y. Xu ,  Jun Sung Chun ,  Michael P.C. Watts

发明人： Frank Y. Xu ,  Jun Sung Chun ,  Michael P.C. Watts

IPC分类号： H05K3/00 ,  B32B3/30 ,  B32B15/00 ,  C01B33/12

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76817 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/24545 ,  Y10T428/24612

摘要： A polymerizable composition includes an organic modified silicate selected from the group consisting of silsesquioxanes having the composition RSiO1.5, partially condensed alkoxysilanes, organically modified silicates having the composition RSiO3 and R2SiO2, and partially condensed orthosilicates having the composition SiOR4, where R is an organic substituent; a decomposable organic compound; a photoinitiator; and a release agent. The composition polymerizes upon exposure to UV radiation to form an inorganic silica network, and the decomposable organic compound decomposes upon exposure to heat to form pores in the inorganic silica network. The composition may be used to form a patterned dielectric layer in an integrated circuit device. A metallic film may be disposed on the patterned dielectric layer and then planarized.

摘要翻译： 可聚合组合物包括选自组成为RSiO 1.5的倍半硅氧烷，部分缩合的烷氧基硅烷，具有组成为RSiO 3和R 2 SiO 2的有机改性硅酸盐和具有组成SiOR 4的部分缩合的原硅酸盐的有机改性硅酸盐，其中R是有机 取代基; 可分解的有机化合物; 光引发剂; 和脱模剂。 组合物在暴露于UV辐射下聚合以形成无机二氧化硅网络，并且可分解有机化合物在暴露于热量时分解，以在无机二氧化硅网络中形成孔隙。 组合物可以用于在集成电路器件中形成图案化的介电层。 金属膜可以设置在图案化的介电层上，然后平坦化。