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    PROJECTION OBJECTIVE FOR A MICROLITHOGRAPHIC EUV PROJECTION EXPOSURE APPARATUS
    1.
    发明申请
    PROJECTION OBJECTIVE FOR A MICROLITHOGRAPHIC EUV PROJECTION EXPOSURE APPARATUS 有权
    微波预处理曝光装置的投影目标

    公开(公告)号：US20110090559A1

    公开(公告)日：2011-04-21

    申请号：US12904513

    申请日：2010-10-14

    申请人： Siegfried Rennon ,  Hans-Juergen Mann ,  Thomas Schicketanz

    发明人： Siegfried Rennon ,  Hans-Juergen Mann ,  Thomas Schicketanz

    IPC分类号： G02B17/06

    CPC分类号： G02B1/10 ,  G02B5/00 ,  G02B5/08 ,  G02B5/085 ,  G02B5/0891 ,  G02B17/0657 ,  G03F7/70233 ,  G03F7/70958

    摘要： A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light.

    摘要翻译： 微光刻EUV投影曝光装置的投影物镜包括第一镜和第二镜。 第一反射镜包括镜面基板和由反射镜基板承载的反射涂层。 第二反射镜包括镜面基板和由反射镜基板承载的反射涂层。 第一和第二反射镜被配置为使得在EUV光的另外相等的照射下，在EUV光的作用下，第一反射镜的反射镜基板小于第二反射镜的反射镜基板。

    Projection objective for a microlithographic EUV projection exposure apparatus
    2.
    发明授权
    Projection objective for a microlithographic EUV projection exposure apparatus 有权
    微光EUV投影曝光设备的投影目标

    公开(公告)号：US08693098B2

    公开(公告)日：2014-04-08

    申请号：US12904513

    申请日：2010-10-14

    申请人： Siegfried Rennon ,  Hans-Juergen Mann ,  Thomas Schicketanz

    发明人： Siegfried Rennon ,  Hans-Juergen Mann ,  Thomas Schicketanz

    IPC分类号： G02B5/08 ,  G02B1/10 ,  G02B5/00

    CPC分类号： G02B1/10 ,  G02B5/00 ,  G02B5/08 ,  G02B5/085 ,  G02B5/0891 ,  G02B17/0657 ,  G03F7/70233 ,  G03F7/70958

    摘要： A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light.

    摘要翻译： 微光刻EUV投影曝光装置的投影物镜包括第一镜和第二镜。 第一反射镜包括镜面基板和由反射镜基板承载的反射涂层。 第二反射镜包括镜面基板和由反射镜基板承载的反射涂层。 第一和第二反射镜被配置为使得在EUV光的另外相等的照射下，在EUV光的作用下，第一反射镜的反射镜基板小于第二反射镜的反射镜基板。

    Microlithography projection exposure apparatus having at least two operating states
    3.
    发明授权
    Microlithography projection exposure apparatus having at least two operating states 有权
    具有至少两个操作状态的微光刻投影曝光装置

    公开(公告)号：US09529276B2

    公开(公告)日：2016-12-27

    申请号：US13040956

    申请日：2011-03-04

    申请人： Hans-Juergen Mann ,  Winfried Kaiser

    发明人： Hans-Juergen Mann ,  Winfried Kaiser

    IPC分类号： G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70475 ,  G03F7/70191 ,  G03F7/70283

    摘要： A microlithography projection exposure apparatus for producing microelectronic components has at least two operating states. The microlithography projection exposure apparatus includes a reflective mask in an object plane. In the first operating state, a first partial region of the mask is illuminated by a first radiation, which has an assigned first centroid direction having a first centroid direction vector at each point of the first partial region. In the second operating state, a second partial region of the mask is illuminated by a second radiation, which has an assigned second centroid direction having a second centroid direction vector at each point of the second partial region. The first and the second partial region have a common overlap region. Furthermore, the microlithography projection exposure apparatus can be configured in such a way that at each point of at least one partial region of the overlap region the scalar triple product of the normalized first centroid direction vector, the normalized second centroid direction vector and a normalized vector that is perpendicular to the mask is less than 0.05.

    摘要翻译： 用于生产微电子部件的微光刻投影曝光装置具有至少两个操作状态。 微光刻投影曝光装置包括物面内的反射掩模。 在第一操作状态下，掩模的第一部分区域由第一辐射照射，第一辐射具有在第一部分区域的每个点处具有第一质心方向矢量的分配的第一质心方向。 在第二操作状态下，掩模的第二部分区域被第二辐射照射，第二辐射具有在第二部分区域的每个点处具有第二质心方向向量的分配的第二质心方向。 第一和第二部分区域具有共同的重叠区域。 此外，微光刻投影曝光装置可以这样配置，使得在重叠区域的至少一个局部区域的每个点处，归一化的第一质心方向矢量的标量三乘积，归一化的第二质心方向矢量和归一化矢量 垂直于掩模的量小于0.05。

    Microlithographic projection exposure apparatus
    5.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号：US08982325B2

    公开(公告)日：2015-03-17

    申请号：US13333350

    申请日：2011-12-21

    申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

    摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Magnifying imaging optical system and metrology system with an imaging optical system of this type
    6.
    发明授权
    Magnifying imaging optical system and metrology system with an imaging optical system of this type 有权
    具有这种成像光学系统的放大成像光学系统和计量系统

    公开(公告)号：US08837041B2

    公开(公告)日：2014-09-16

    申请号：US13302147

    申请日：2011-11-22

    申请人： Hans-Juergen Mann ,  Heiko Feldmann

    发明人： Hans-Juergen Mann ,  Heiko Feldmann

    IPC分类号： G02B17/00 ,  G02B17/06

    CPC分类号： G02B17/0663

    摘要： A magnifying imaging optical system is disclosed that has precisely three mirrors, which image an object field in an object plane into an image field in an image plane. A ratio between a transverse dimension of the image field and a transverse dimension measured in the same direction of a useful face of the last mirror before the image field is greater than 3. In a further aspect, the magnifying imaging optical system is disclosed that has at least three mirrors, which image an object field in an object plane in an image field in an image plane. A first mirror in the beam path after the object field is concave, a second mirror is also concave and a third mirror is convex. An angle of incidence of imaging beams on the last mirror before the image field is less than 15°.

    摘要翻译： 公开了一种放大成像光学系统，其具有精确的三个反射镜，其将物平面中的物场映像成图像平面中的图像场。 图像场的横向尺寸与在图像场大于3之前的最后一个反射镜的有用面的相同方向上测量的横向尺寸之间的比。在另一方面，公开了放大成像光学系统，其具有 至少三个镜子，其在图像平面中的图像场中对物体平面中的物体场进行成像。 在物场之后的光束路径中的第一镜是凹的，第二镜也是凹的，第三镜是凸的。 在图像场之前的最后一个镜子上的成像光束的入射角小于15°。

    Illumination optical system for projection lithography
    7.
    发明授权
    Illumination optical system for projection lithography 有权
    投影光刻照明光学系统

    公开(公告)号：US08817233B2

    公开(公告)日：2014-08-26

    申请号：US13040765

    申请日：2011-03-04

    申请人： Hans-Juergen Mann

    发明人： Hans-Juergen Mann

    IPC分类号： G03B27/54 ,  G03F7/20

    CPC分类号： G03F7/70075 ,  G02B19/0023 ,  G02B19/0047 ,  G02B19/0095 ,  G02B27/0905 ,  G02B27/0977 ,  G03F7/70091 ,  G03F7/702 ,  G03F7/70233

    摘要： An illumination optical system for projection lithography for the illumination of an illumination field has a facet mirror. An optical system, which follows the illumination optical system, has an object field which can be arranged in the illumination field of the illuminate optical system. The facet mirror has a plurality of facets to reflectively guide part bundles of a bundle of illumination light. Reflection faces of the facets are tiltable in each case. In a first illumination tilt position, the tiltable facets guide the part bundle impinging on them along a first object field illumination channel to the illumination field. In a different illumination tilt position, the tiltable facets guide the part bundle impinging on them along a different object field illumination channel to the illumination field. The reflection faces of the tiltable facets are configured so that the part bundle in the at least two illumination tilt positions is reflected with a degree of reflection R coinciding within a tolerance range of +/−10%. The result is an illumination optical system which avoids an undesired influence of the illumination tilt position of the tiltable facets on the illumination light throughput of the illumination optical system.

    摘要翻译： 用于照明场照明的投影光刻用照明光学系统具有小平面镜。 跟随照明光学系统的光学系统具有可以被布置在照明光学系统的照明场中的物体场。 小平面镜具有多个面以反射地引导一束照明光的部分束。 每个面的反射面在每种情况下都是倾斜的。 在第一照明倾斜位置中，可倾斜小平面将沿着第一物场照明通道照射到其上的部分束引导到照明场。 在不同的照明倾斜位置中，可倾斜小平面将沿着不同的物场照明通道照射到它们上的部分束引导到照明场。 可倾斜面的反射面被构造成使得至少两个照明倾斜位置中的部分束以+/- 10％的公差范围内的一定的反射度R反射。 结果是照明光学系统避免了可倾斜小面的照明倾斜位置对照明光学系统的照明光通过量的不期望的影响。

    Optical imaging device and imaging method for microscopy
    9.
    发明授权
    Optical imaging device and imaging method for microscopy 有权
    光学成像装置及显微镜成像方法

    公开(公告)号：US08711472B2

    公开(公告)日：2014-04-29

    申请号：US12568306

    申请日：2009-09-28

    申请人： Hans-Juergen Mann ,  Heiko Feldmann

    发明人： Hans-Juergen Mann ,  Heiko Feldmann

    IPC分类号： G02B21/04

    CPC分类号： G02B17/0631 ,  G02B21/04

    摘要： The present invention relates to an optical imaging device, in particular for microscopy, with a first optical element group and a second optical element group, wherein the first optical element group and the second optical element group, on an image plane, form an image of an object point of an object plane via at least one imaging ray having an imaging ray path. The first optical element group comprises a first optical element with a reflective first optical surface in the imaging ray path and a second optical element with a reflective second optical surface in the imaging ray path, wherein the first optical surface is concave. The second optical element group comprises a third optical element with a concave reflective third optical surface in the imaging ray path and a fourth optical element with a convex reflective fourth optical surface in the imaging ray path without light passage aperture.

    摘要翻译： 本发明涉及具有第一光学元件组和第二光学元件组的特别是显微镜的光学成像装置，其中第一光学元件组和第二光学元件组在图像平面上形成图像 经由具有成像光线路径的至少一个成像射线的物体平面的物体点。 第一光学元件组包括在成像光线路径中具有反射第一光学表面的第一光学元件和在成像光线路径中具有反射第二光学表面的第二光学元件，其中第一光学表面是凹形的。 第二光学元件组包括在成像光线路径中具有凹入反射第三光学表面的第三光学元件和在成像光线路径中具有凸起的反射第四光学表面的第四光学元件，而没有光通过孔。