Semiconductor module with a supporting structure on the bottom side

    公开(公告)号:US10699984B2

    公开(公告)日:2020-06-30

    申请号:US16471472

    申请日:2017-12-15

    IPC分类号: H01L23/367 H01L23/373

    摘要: A semiconductor module includes a substrate composed of electrically insulating material. A structured metal layer for contact with an electrical component is applied to a top side of the substrate. The structured metal layer is applied to the substrate only in a central region of the substrate, so that an edge region which surrounds the central region and in which the structured metal layer is not applied to the substrate remains on the top side of the substrate. A contact layer for making contact with a cooling body is situated opposite the structured metal layer and applied to a bottom side of the substrate in the central region. A structured supporting structure is further applied to the bottom side of the substrate in the edge region and has a thickness which corresponds to a thickness of the contact layer.

    Thermally conductive insulator
    5.
    发明授权

    公开(公告)号:US11129301B2

    公开(公告)日:2021-09-21

    申请号:US16332676

    申请日:2017-08-24

    IPC分类号: H05K7/20 H01L23/367

    摘要: A thermally conductive insulator includes a first part having first fins arranged on a surface of the first part, and a second part having second fins arranged on a surface of the second part. The first fins and the second fins are arranged in such a way that they mesh with one another. Arranged between the first and second parts in a region of the first and second fins is an insulating layer.