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    SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL COMPONENTS
    1.
    发明申请
    SYSTEMS AND METHODS FOR ADDITIVE MANUFACTURING AND REPAIR OF METAL COMPONENTS 有权
    金属部件添加制造和修复的系统和方法

    公开(公告)号：US20140163717A1

    公开(公告)日：2014-06-12

    申请号：US14076101

    申请日：2013-11-08

    申请人： Suman DAS ,  Rohan Bansal ,  Justin Gambone

    发明人： Suman DAS ,  Rohan Bansal ,  Justin Gambone

    IPC分类号： B22F3/105

    CPC分类号： B22F7/062 ,  B22F3/1055 ,  B22F5/009 ,  B22F5/04 ,  B22F2003/1056 ,  B22F2003/1057 ,  B22F2007/068 ,  B23P6/007 ,  B29C64/153 ,  B29L2031/08 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B33Y70/00 ,  B33Y80/00 ,  C30B13/24 ,  C30B13/28 ,  C30B13/32 ,  C30B19/08 ,  C30B19/10 ,  C30B29/52 ,  Y02P10/295

    摘要： Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.

    摘要翻译： 扫描激光外延（SLE）是一种逐层添加剂制造工艺，其允许通过控制熔化和再固化放置在基底顶部的金属粉末来制造具有指定微结构的三维物体。 例如，SLE可用于修复单晶（SX）涡轮机翼型，以及制造功能梯度的涡轮机部件。 SLE过程能够产生等轴，定向凝固和SX结构。 基于离线模型的实时反馈控制方案可用于创建指定的无缺陷微结构并提高过程的重复性。 可以基于通过热成像相机以及熔池观察视频显微镜在高帧速率下提供的温度数据反馈来使用控制方案。 实时控制方案可以提供从原料粉末制造发动机准备好的网状涡轮机部件的能力。

    Laser treatment apparatus and method of manufacturing semiconductor device
    2.
    发明授权
    Laser treatment apparatus and method of manufacturing semiconductor device 有权
    激光治疗装置及半导体装置的制造方法

    公开(公告)号：US08035877B2

    公开(公告)日：2011-10-11

    申请号：US12719899

    申请日：2010-03-09

    申请人： Shunpei Yamazaki

    发明人： Shunpei Yamazaki

    IPC分类号： G02B26/08

    CPC分类号： H01L21/02691 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/08 ,  B23K26/082 ,  B23K26/0821 ,  C30B13/32 ,  G02B26/101 ,  G02B26/105 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01S5/4025

    摘要： A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an fθ lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed. The number of optical systems is not limited; any number of optical systems is allowed as long as a means for supplying a plurality of laser beams is provided.

    摘要翻译： 提供一种激光治疗装置，其能够在大基板的整个表面上将激光束照射到要形成TFT的位置以实现结晶，从而形成具有高晶粒直径的晶体半导体膜 吞吐量。 激光治疗装置包括激光振荡装置，用于会聚准直透镜或柱面透镜等激光束的透镜，用于改变激光束的光路的固定镜，用于径向扫描激光的第一可动镜 梁在二维方向，和一个f＆thetas; 用于在激光束扫描的情况下保持扫描速度恒定的透镜。 这些结构部件被统称为一个光学系统。 图1所示的激光治疗装置 1具有其中放置五个这样的光学系统的结构。 光学系统的数量不受限制; 只要提供用于供给多个激光束的装置，就允许任何数量的光学系统。

    Laser treatment apparatus and method of manufacturing semiconductor device
    3.
    发明申请
    Laser treatment apparatus and method of manufacturing semiconductor device 有权
    激光治疗装置及半导体装置的制造方法

    公开(公告)号：US20040201874A1

    公开(公告)日：2004-10-14

    申请号：US10834033

    申请日：2004-04-29

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki

    IPC分类号： G02B026/08

    CPC分类号： H01L21/02691 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/08 ,  B23K26/082 ,  B23K26/0821 ,  C30B13/32 ,  G02B26/101 ,  G02B26/105 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01S5/4025

    摘要： A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an fnull lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. 1 has a structure in which five such optical systems are placed. The number of optical systems is not limited; any number of optical systems is allowed as long as a means for supplying a plurality of laser beams is provided.

    摘要翻译： 提供一种激光治疗装置，其能够在大基板的整个表面上将激光束照射到要形成TFT的位置以实现结晶，从而形成具有高晶粒直径的晶体半导体膜 吞吐量。 激光治疗装置包括激光振荡装置，用于会聚准直透镜或柱面透镜等激光束的透镜，用于改变激光束的光路的固定镜，用于径向扫描激光的第一可动镜 在二维方向上的光束，以及用于在激光束扫描的情况下保持扫描速度恒定的透镜。 这些结构部件被统称为一个光学系统。 图1所示的激光治疗装置 1具有其中放置五个这样的光学系统的结构。 光学系统的数量不受限制; 只要提供用于供给多个激光束的装置，就允许任何数量的光学系统。

    Apparatus for floating melt zone processing of a semiconductor rod
    5.
    发明授权
    Apparatus for floating melt zone processing of a semiconductor rod 失效
    用于半导体棒的浮动熔融区加工的装置

    公开(公告)号：US4092124A

    公开(公告)日：1978-05-30

    申请号：US707957

    申请日：1976-07-23

    申请人： Hans Stut

    发明人： Hans Stut

    IPC分类号： C30B13/20 ,  C30B13/32 ,  H01L21/208 ,  B01J17/10

    CPC分类号： C30B13/32 ,  Y10T117/1088

    摘要： An apparatus for floating melt zone processing of a semiconductor rod including an axially fixed induction heating coil wherein the heating coil is attached to a horizontal shift means having an amplitude sufficiently great to move the coil away from the rod during insertion and/or removal of the rod in the apparatus.

    摘要翻译： 一种用于包括轴向固定的感应加热线圈的半导体棒的浮动熔融区处理的装置，其中加热线圈附接到具有足够大的振幅的水平移动装置，以在插入和/或移除线圈期间使线圈远离杆移动 杆在设备中。

    Apparatus for imparting combined centrosymmetric and noncentro-symmetric rotation to semiconductor bodies
    6.
    发明授权
    Apparatus for imparting combined centrosymmetric and noncentro-symmetric rotation to semiconductor bodies 失效
    用于将中心对称和非中心对称旋转组合到半导体体的装置

    公开(公告)号：US4087239A

    公开(公告)日：1978-05-02

    申请号：US733239

    申请日：1976-10-18

    申请人： Harvey E. Cline ,  Thomas R. Anthony

    发明人： Harvey E. Cline ,  Thomas R. Anthony

    IPC分类号： C30B13/24 ,  C30B13/32 ,  F27B9/14

    CPC分类号： C30B13/24 ,  C30B13/32 ,  Y10S117/90 ,  Y10S414/135

    摘要： An apparatus for imparting combined centro-symmetric and noncentro-symmetric rotation to semiconductor bodies comprises a liquid-cooled sun gear, a stationary liquid-cooled ring gear coaxial with and radially spaced outwardly from the sun gear, and at least one planet gear disposed between and driven in engagement with the sun and ring gears. Means are provided for supporting a semiconductor body on each of the planet gears while minimizing the conduction of heat from the semiconductor body to the planet gear. Means are also provided for guiding a semiconductor body onto the supporting means and centering the semiconductor body on the planet gear. Thermal distortion of the apparatus is minimized when heated to extreme temperatures making the apparatus ideally suited for processing the semiconductor bodies with heat as in processing by temperature gradient zone melting.

    摘要翻译： 用于将中心对称和非中心对称旋转组合到半导体主体的装置包括液体冷却的太阳齿轮，与太阳齿轮同轴并与其径向间隔开的静止液冷环形齿轮，以及至少一个行星齿轮， 并与太阳和环形齿轮啮合。 提供了用于在每个行星齿轮上支撑半导体本体的装置，同时最小化从半导体主体到行星齿轮的热传导。 还提供了用于将半导体主体引导到支撑装置上并将半导体主体对准在行星齿轮上的装置。 当加热到极端温度时，设备的热变形最小化，使得该设备理想地适合于加热半导体体，如在温度梯度区熔化的加工中。

    Apparatus for producing rod-shaped members of crystalline material
    7.
    发明授权
    Apparatus for producing rod-shaped members of crystalline material 失效
    用于生产晶体材料的R形形状成员的装置

    公开(公告)号：US3620682A

    公开(公告)日：1971-11-16

    申请号：US3620682D

    申请日：1969-10-31

    申请人： SIEMENS AG

    发明人： KELLER WOLFGANG

    IPC分类号： C30B13/32 ,  B01J17/00

    CPC分类号： C30B13/32 ,  Y10T117/1064 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： Combination in apparatus for producing rod-shaped members of crystalline material includes a sealed receptacle having a top wall, bottom wall and lateral wall portions, a pair of rod holders located in the receptacle substantially along the vertical central axis of the receptacle for supporting a rodshaped member of crystalline material therebetween, heating means mounted in the receptacle for producing a melting zone in the rod-shaped crystalline member, the heating means and the holders being displaceable relative to one another for passing the melting zone along the rod-shaped crystalline member, and drive means extending into the receptacle through a wall portion other than the bottom wall portion from a location outside the receptacle for moving the holders and the heating means relative to one another.