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1.发明公开公开(公告)号：US20240297632A1
公开(公告)日：2024-09-05
申请号：US18441907
申请日：2024-02-14
发明人： Satoru Matsuda , Naoya Iwamoto , Hisatada Yasukawa
CPC分类号： H03H9/02086 , H03H3/04 , H03H9/132 , H03H9/568 , H03H2003/0428
摘要： An acoustic wave filter includes a plurality of acoustic wave resonators configured to filter a radio frequency signal, each of the plurality of acoustic wave resonators having a different frequency response and including a piezoelectric structure and a metal top electrode structure, one or more of the acoustic wave resonators having a mass loading portion that is a single seamless piece with the metal top electrode.
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公开(公告)号：US20220224308A1
公开(公告)日：2022-07-14
申请号：US17657533
申请日：2022-03-31
发明人： Satoru Matsuda , Tatsuya Fujii , Yoshiro Kabe , Kenji Nagano
摘要： Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.
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公开(公告)号：US11855603B2
公开(公告)日：2023-12-26
申请号：US17657533
申请日：2022-03-31
发明人： Satoru Matsuda , Tatsuya Fujii , Yoshiro Kabe , Kenji Nagano
CPC分类号： H03H9/02574 , H03H9/02559 , H03H9/02834 , H03H9/02842 , H03H9/14502 , H03H9/14541 , H03H9/25 , H03H9/6406 , H03H9/725
摘要： Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.
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公开(公告)号：US20230253942A1
公开(公告)日：2023-08-10
申请号：US18165423
申请日：2023-02-07
摘要： Disclosed herein are embodiments of a method of manufacturing film bulk acoustic wave resonators. The method comprises forming a sacrificial layer over a surface of a substrate to form a plurality of film bulk acoustic wave resonators on the surface of the substrate, forming a piezoelectric film on the surface of the substrate to cover the sacrificial layer, and removing the sacrificial layer to form an air gap between the surface of the substrate and the piezoelectric film that has covered the sacrificial layer, the air gap corresponding to each of the plurality of film bulk acoustic wave resonators. The step of forming the piezoelectric film includes controlling a concentration distribution of an additive added to the piezoelectric film across the surface of the substrate to suppress a variation of the acoustic velocity of the piezoelectric film depending on a position on the main surface of the substrate.
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5.发明授权公开(公告)号：US11522515B2
公开(公告)日：2022-12-06
申请号：US15922355
申请日：2018-03-15
发明人： Satoru Matsuda , Atsushi Nishimura , Yoshiro Kabe
摘要： An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film exhibits a temperature coefficient of velocity of substantially zero throughout an operating temperature range of the acoustic wave device of between −55° C. and 125° C.
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6.发明申请公开(公告)号：US20180269848A1
公开(公告)日：2018-09-20
申请号：US15922355
申请日：2018-03-15
发明人： Satoru Matsuda , Atsushi Nishimura , Yoshiro Kabe
CPC分类号： H03H9/02535 , H03H3/10 , H03H9/02007 , H03H9/02834 , H03H9/171
摘要： An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film exhibits a temperature coefficient of velocity of substantially zero throughout an operating temperature range of the acoustic wave device of between −55° C. and 125° C.
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公开(公告)号：US20200266796A1
公开(公告)日：2020-08-20
申请号：US16790408
申请日：2020-02-13
发明人： Satoru Matsuda , Tatsuya Fujii , Yoshiro Kabe , Kenji Nagano
摘要： An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.
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公开(公告)号：US20240088865A1
公开(公告)日：2024-03-14
申请号：US18511405
申请日：2023-11-16
发明人： Satoru Matsuda , Tatsuya Fujii , Yoshiro Kabe , Kenji Nagano
CPC分类号： H03H9/02574 , H03H9/02559 , H03H9/02834 , H03H9/02842 , H03H9/14502 , H03H9/14541 , H03H9/25 , H03H9/6406 , H03H9/725
摘要： An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.
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