公开(公告)号：US08735946B2

公开(公告)日：2014-05-27

申请号：US14027528

申请日：2013-09-16

Applicant: Soitec

Inventor： Mohamad A Shaheen ,  Frederic Allibert ,  Gweltaz Gaudin ,  Fabrice Lallement ,  Didier Landru ,  Karine Landry ,  Carlos Mazure

IPC: H01L27/148

CPC classification number: H01L29/78603 ,  H01L29/32 ,  H01L29/7841 ,  H01L31/0248

Abstract: Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.

Abstract translation: 本发明的实施例涉及包括基底晶片，绝缘层和顶部半导体层的基板，其中绝缘层至少包括电荷密度高于1010电荷/ cm 2的绝对值的区域。 本发明还涉及制造这种基材的方法。