公开(公告)号：US09337377B2

公开(公告)日：2016-05-10

申请号：US13720524

申请日：2012-12-19

Applicant: Soitec

Inventor： Chantal Arena ,  Robin Scott ,  Claudio Canizares

IPC: C30B25/16 ,  H01L31/18 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L27/15 ,  H01L33/32 ,  H01L33/08

CPC classification number: H01L31/184 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/08 ,  H01L33/32

Abstract: Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.

Abstract translation: 原子层沉积（ALD）或ALD样沉积工艺用于制造稀氮化物III-V半导体材料。 可以使工艺气体的第一组合物流入沉积室，并且除了氮和一个或多个III族元素之外的第V族元素可以被吸附在衬底上（原子或分子形式）。 之后，可以使工艺气体的第二组合物流入沉积室，并且可以在沉积室中将N和一个或多个III族元素吸附在衬底上。 稀释氮化物III-V半导体材料的外延层可以从沉积室中的顺序吸附元件形成在衬底上。

公开(公告)号：US09324911B2

公开(公告)日：2016-04-26

申请号：US13720284

申请日：2012-12-19

Applicant: Soitec

Inventor： Chantal Arena ,  Robin Scott ,  Claudio Canizares

IPC: H01L33/32 ,  H01L21/02 ,  H01L31/0687 ,  H01L27/15 ,  H01L31/0304 ,  H01L31/18 ,  H01S5/323 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02664 ,  H01L27/153 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/1848 ,  H01L33/0062 ,  H01L33/08 ,  H01S5/32341 ,  H01S5/32358 ,  Y02E10/544

Abstract: Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.

Abstract translation: 稀氮化物III-V半导体材料可以通过用先前形成的氮化物材料中的一些N原子取代As原子将至少一部分先前形成的氮化物材料转化成包括砷的稀氮化物III-V半导体材料来形成。 这种方法可以用于制造光电器件，例如光伏电池和光电放电器。 该方法可以在沉积室内进行，例如金属有机化学气相沉积（MOCVD）或氢化物气相外延（HVPE）室。