公开(公告)号：US09337377B2

公开(公告)日：2016-05-10

申请号：US13720524

申请日：2012-12-19

Applicant: Soitec

Inventor： Chantal Arena ,  Robin Scott ,  Claudio Canizares

IPC: C30B25/16 ,  H01L31/18 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L27/15 ,  H01L33/32 ,  H01L33/08

CPC classification number: H01L31/184 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/08 ,  H01L33/32

Abstract: Atomic layer deposition (ALD) or ALD-like deposition processes are used to fabricate dilute nitride III-V semiconductor materials. A first composition of process gases may be caused to flow into a deposition chamber, and a group V element other than nitrogen and one or more group III elements may be adsorbed over the substrate (in atomic or molecular form). Afterward, a second composition of process gases may be caused to flow into the deposition chamber, and N and one or more group III elements may be adsorbed over the substrate in the deposition chamber. An epitaxial layer of dilute nitride III-V semiconductor material may be formed over the substrate in the deposition chamber from the sequentially adsorbed elements.

Abstract translation: 原子层沉积（ALD）或ALD样沉积工艺用于制造稀氮化物III-V半导体材料。 可以使工艺气体的第一组合物流入沉积室，并且除了氮和一个或多个III族元素之外的第V族元素可以被吸附在衬底上（原子或分子形式）。 之后，可以使工艺气体的第二组合物流入沉积室，并且可以在沉积室中将N和一个或多个III族元素吸附在衬底上。 稀释氮化物III-V半导体材料的外延层可以从沉积室中的顺序吸附元件形成在衬底上。

公开(公告)号：US20150128860A1

公开(公告)日：2015-05-14

申请号：US14401261

申请日：2013-05-24

Applicant: Soitec

Inventor： Claudio Canizares ,  Ding Ding

IPC: C23C16/48 ,  C30B25/08 ,  C23C16/52

CPC classification number: C23C16/48 ,  C23C16/52 ,  C30B25/08 ,  C30B25/16 ,  Y10T29/49

Abstract: Deposition chambers (102) for use with deposition systems (100) include a chamber wall (112) comprising a transparent material. The chamber wall may include an outer metrology window (122) surface extending from and at least partially circumscribed by an outer major surface of the wall, and an inner metrology window surface extending from and at least partially circumscribed by an inner major surface of the wall. The window surfaces may be oriented at angles to the major surfaces. Deposition systems include such chambers. Methods include the formation of such deposition chambers. The depositions systems and chambers may be used to perform in-situ metrology.

Abstract translation: 用于沉积系统（100）的沉积室（102）包括包含透明材料的室壁（112）。 腔室壁可以包括从壁的外主表面延伸并且至少部分地由外壁的外表面延伸的外计量窗（122）表面，以及从壁的内主表面延伸并且至少部分地由壁的内主表面延伸的内计量窗表面 。 窗表面可以与主表面成角度定向。 沉积系统包括这样的室。 方法包括形成这样的沉积室。 沉积系统和室可用于执行原位测量。

公开(公告)号：US20150099065A1

公开(公告)日：2015-04-09

申请号：US14401386

申请日：2013-05-24

Applicant: Soitec

Inventor： Claudio Canizares ,  Ronald Thomas Bertram, Jr.

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45502 ,  C23C16/45514 ,  C23C16/45591 ,  C30B25/14 ,  C30B25/165 ,  C30B29/406

Abstract: Visor injectors include a gas injector port, internal sidewalls, and at least two ridges for directing gas flow through the visor injectors. Each of the ridges extends from a location proximate a hole in the gas injector port toward a gas outlet of the visor injector and is positioned between the internal sidewalls. Deposition systems include a base with divergently extending internal sidewalls, a gas injection port, a lid, and at least two divergently extending ridges for directing gas flow through a central region of a space at least partially defined by the internal sidewalls of the base and a bottom surface of the lid. Methods of forming a material on a substrate include flowing a precursor through such a visor injector and directing a portion of the precursor to flow through a central region of the visor injector with at least two ridges.

Abstract translation: 遮阳喷射器包括气体喷射器端口，内部侧壁和用于引导气体流过遮阳板喷射器的至少两个脊。 每个脊从靠近气体注射器端口中的孔的位置朝向面板喷射器的气体出口延伸并且位于内侧壁之间。 沉积系统包括具有分散延伸的内部侧壁的基部，气体注入端口，盖子和至少两个分开延伸的脊部，用于引导气体流动通过至少部分地由基部的内侧壁限定的空间的中心区域，以及 盖底面。 在基材上形成材料的方法包括使前体流过这种面板注射器，并引导一部分前体以至少两个脊流过面罩注射器的中心区域。

公开(公告)号：US09324911B2

公开(公告)日：2016-04-26

申请号：US13720284

申请日：2012-12-19

Applicant: Soitec

Inventor： Chantal Arena ,  Robin Scott ,  Claudio Canizares

IPC: H01L33/32 ,  H01L21/02 ,  H01L31/0687 ,  H01L27/15 ,  H01L31/0304 ,  H01L31/18 ,  H01S5/323 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02664 ,  H01L27/153 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/1848 ,  H01L33/0062 ,  H01L33/08 ,  H01S5/32341 ,  H01S5/32358 ,  Y02E10/544

Abstract: Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.

Abstract translation: 稀氮化物III-V半导体材料可以通过用先前形成的氮化物材料中的一些N原子取代As原子将至少一部分先前形成的氮化物材料转化成包括砷的稀氮化物III-V半导体材料来形成。 这种方法可以用于制造光电器件，例如光伏电池和光电放电器。 该方法可以在沉积室内进行，例如金属有机化学气相沉积（MOCVD）或氢化物气相外延（HVPE）室。

公开(公告)号：US20150167161A1

公开(公告)日：2015-06-18

申请号：US14401352

申请日：2013-05-24

Applicant: Soitec

Inventor： Claudio Canizares ,  Dan Gura ,  Ronald Thomas Bertram, JR.

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45514 ,  C23C16/45574 ,  C30B25/14

Abstract: A gas injector includes a base plate, a middle plate, and a top plate. The base plate, middle plate, and top plate are configured to flow a purge gas between the base plate and the middle plate and to flow a precursor gas between the middle plate and the top plate. Another gas injector includes a precursor gas inlet, a lateral precursor gas flow channel, and a plurality of precursor gas flow channels. The plurality of precursor gas flow channels extend from the at least one lateral precursor gas flow channel to an outlet of the gas injector. Methods of forming a material on a substrate include flowing a precursor between a middle plate and a top plate of a gas injector and flowing a purge gas between a base plate and the middle plate of the gas injector.

Abstract translation: 气体喷射器包括基板，中间板和顶板。 基板，中间板和顶板构造成在基板和中间板之间流动净化气体，并使前体气体在中间板和顶板之间流动。 另一气体喷射器包括前体气体入口，侧向前体气体流动通道和多个前体气体流动通道。 多个前体气体流动通道从至少一个侧向前体气体流动通道延伸到气体注入器的出口。 在基板上形成材料的方法包括使前体在气体注射器的中间板和顶板之间流动，并且将吹扫气体在基板和气体注入器的中间板之间流动。

公开(公告)号：US20150292088A1

公开(公告)日：2015-10-15

申请号：US14443202

申请日：2013-11-20

Applicant: Claudio CANIZARES ,  SOITEC

Inventor： Claudio Canizares

IPC: C23C16/455 ,  H01L21/02 ,  B23P19/04

CPC classification number: C23C16/45563 ,  B23P19/04 ,  C23C16/45504 ,  C23C16/45591 ,  C30B25/14 ,  C30B29/403 ,  C30B35/00 ,  H01L21/0262

Abstract: A deposition system includes two or more gas injectors that may be interchangeably used in a chamber of the deposition system. Each of the gas injectors may be configured to generate a sheet of flowing gas over a substrate support structure. The sheets may have differing widths, such that the gas injectors may be used with substrates having different diameters, which may enable use of the system with different substrates while maintaining efficient use of precursor gas. A method of forming such a deposition system includes forming and configuring such gas injectors to be interchangeably used at a common location within the deposition chamber. A method of using such a deposition system includes using two or more such gas injectors to deposit material on substrates having different sizes.

Abstract translation: 沉积系统包括可以在沉积系统的腔室中互换使用的两个或更多个气体喷射器。 每个气体喷射器可以被配置成在衬底支撑结构上方产生流动气体片。 片材可以具有不同的宽度，使得气体注入器可以与具有不同直径的基底一起使用，这可以使得能够在保持有效使用前体气体的同时使用不同的基底的系统。 形成这种沉积系统的方法包括形成和配置这样的气体喷射器，以在沉积室内的公共位置可互换地使用。 使用这种沉积系统的方法包括使用两个或更多个这种气体注入器将材料沉积在具有不同尺寸的基底上。