公开(公告)号：US09653536B2

公开(公告)日：2017-05-16

申请号：US14646642

申请日：2013-12-02

Applicant: Soitec

Inventor： Alexandre Chibko ,  Isabelle Bertrand ,  Sylvain Peru ,  Sothachett Van ,  Patrick Reynaud

IPC: H01L21/324 ,  H01L29/04 ,  H01L21/762 ,  H01L21/02 ,  H01L29/16 ,  H01L21/265

CPC classification number: H01L29/04 ,  H01L21/02263 ,  H01L21/02524 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/76254 ,  H01L29/16

Abstract: A method for fabricating a structure comprising, in succession, a support substrate, a dielectric layer, an active layer, a separator layer of polycrystalline silicon, comprising the steps of: a) providing a donor substrate, b) forming an embrittlement area in the donor substrate, c) providing the support structure, d) forming the separator layer on the support substrate, e) forming the dielectric layer, f) assembling the donor substrate and the support substrate, g) fracturing the donor substrate along the embrittlement area, h) subjecting the structure to a strengthening annealing of at least 10 minutes, the fabrication method being noteworthy in that step d) is executed in such a way that the polycrystalline silicon of the separator layer exhibits an entirely random grain orientation, and in that the strengthening annealing is executed at a temperature strictly greater than 950° C. and less than 1200° C.

公开(公告)号：US20150303247A1

公开(公告)日：2015-10-22

申请号：US14646642

申请日：2013-12-02

Applicant: Soitec

Inventor： Alexandre Chibko ,  Isabelle Bertrand ,  Sylvain Peru ,  Sothachett Van ,  Patrick Reynaud

IPC: H01L29/04 ,  H01L29/16 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L29/04 ,  H01L21/02263 ,  H01L21/02524 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/76254 ,  H01L29/16

Abstract: This method for fabricating a structure comprising, in succession, a support substrate, a dielectric layer, an active layer, a separator layer of polycrystalline silicon, comprising the steps of: a) providing a donor substrate, b) forming an embrittlement area in the donor substrate, c) providing the support structure, d) forming the separator layer on the support substrate, e) forming the dielectric layer, f) assembling the donor substrate and the support substrate, g) fracturing the donor substrate along the embrittlement area, h) subjecting the structure to a strengthening annealing of at least 10 minutes, the fabrication method being noteworthy in that step d) is executed in such a way that the polycrystalline silicon of the separator layer exhibits an entirely random grain orientation, and in that the strengthening annealing is executed at a temperature strictly greater than 950° C. and less than 1200° C.

Abstract translation: 用于制造结构的方法包括依次包括支撑衬底，电介质层，有源层，多晶硅隔板层，其包括以下步骤：a）提供施主衬底，b）在所述衬底中形成脆化区域 供体衬底，c）提供支撑结构，d）在支撑衬底上形成隔离层，e）形成电介质层，f）组装供体衬底和支撑衬底，g）沿着脆化区域压裂供体衬底， h）对结构进行至少10分钟的强化退火，在步骤d）中制造方法值得注意的是，隔板层的多晶硅呈现完全随机的晶粒取向， 强化退火在严格高于950℃且小于1200℃的温度下进行。