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公开(公告)号：US20180240922A1
公开(公告)日：2018-08-23
申请号：US15873135
申请日：2018-01-17
发明人： Daniel Derkacs , Zachary Bittner , Samantha Whipple , Alexander Haas , John Hart , Nathaniel Miller , Pravin Patel , Paul Sharps
IPC分类号： H01L31/041 , H01L31/0687 , H01L31/18 , B64G1/44
CPC分类号： H01L31/041 , B64G1/443 , H01L31/048 , H01L31/0504 , H01L31/0687 , H01L31/078 , H01L31/1844 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A four junction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to and lattice mismatched from said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV, and the average band gap of the solar cell is equal to or greater than 1.35 eV.
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公开(公告)号：US10770612B1
公开(公告)日：2020-09-08
申请号：US16352292
申请日：2019-03-13
发明人： Daniel Derkacs , Daniel Aiken , Samantha Whipple , Nathaniel Miller , Bed Pantha , Mark Stan
IPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/054 , H01L31/0735 , H01L31/0304 , H01L31/047
摘要： The present disclosure provides a multijunction solar cell comprising: an upper solar subcell having an indirect band gap semiconductor emitter layer composed of greater than 0.7 but less than 1.0 mole fraction aluminum and a base layer, the emitter layer and the base layer forming a heterojunction solar subcell; and a lower solar subcell disposed beneath the upper solar subcell, wherein the lower solar subcell has an emitter layer and a base layer forming a photoelectric junction. In some embodiments, the emitter layer of the upper solar subcell is an n-type AlxGa1-xAs layer with 0.7
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公开(公告)号：US20180226528A1
公开(公告)日：2018-08-09
申请号：US15938246
申请日：2018-03-28
发明人： John Hart , Zachary Bittner , Samantha Whipple , Nathaniel Miller , Daniel Derkacs , Paul Sharps
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/054 , H01L31/044 , H01L31/18
摘要： A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
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公开(公告)号：US11799049B2
公开(公告)日：2023-10-24
申请号：US17241336
申请日：2021-04-27
IPC分类号： H01L31/18 , H01L31/0735
CPC分类号： H01L31/1844 , H01L31/0735 , H01L31/1852
摘要： A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.
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公开(公告)号：US20200274016A1
公开(公告)日：2020-08-27
申请号：US16818258
申请日：2020-03-13
发明人： John Hart , Zachary Bittner , Samantha Whipple , Nathaniel Miller , Daniel Derkacs , Paul Sharps
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/18 , H01L31/054 , H01L31/044 , H01L31/074 , H01L31/078 , H01L31/0687
摘要： A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
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公开(公告)号：US20200259039A1
公开(公告)日：2020-08-13
申请号：US16736662
申请日：2020-01-07
IPC分类号： H01L31/18 , H01L31/0735
摘要： A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.
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公开(公告)号：US11380813B2
公开(公告)日：2022-07-05
申请号：US16736662
申请日：2020-01-07
IPC分类号： H01L31/18 , H01L31/0735
摘要： A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.
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公开(公告)号：US20210408320A1
公开(公告)日：2021-12-30
申请号：US17241336
申请日：2021-04-27
IPC分类号： H01L31/18 , H01L31/0735
摘要： A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.
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公开(公告)号：US10707366B2
公开(公告)日：2020-07-07
申请号：US15938246
申请日：2018-03-28
发明人： John Hart , Zachary Bittner , Samantha Whipple , Nathaniel Miller , Daniel Derkacs , Paul Sharps
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/18 , H01L31/054 , H01L31/044 , H01L31/074 , H01L31/078 , H01L31/0687 , H01L31/076 , H01L27/30 , H01L31/0693 , H01L31/073 , H01L31/0745 , H01L31/0368 , H01L21/28 , H01L29/737 , H01L31/0376 , H01L31/0352 , H01L31/20
摘要： A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
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公开(公告)号：US20180226532A1
公开(公告)日：2018-08-09
申请号：US15938266
申请日：2018-03-28
发明人： John Hart , Zachary Bittner , Samantha Whipple , Nathaniel Miller , Daniel Derkacs , Paul Sharps
IPC分类号： H01L31/18 , H01L31/0725 , H01L31/0735 , H01L31/054 , H01L31/044
CPC分类号： H01L31/1852 , H01L31/044 , H01L31/0547 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/078 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
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