公开(公告)号：US12074246B2

公开(公告)日：2024-08-27

申请号：US18216633

申请日：2023-06-30

Applicant: Solarlab Aiko Europe GmbH

Inventor： Yongqian Wang ,  Ning Zhang ,  Wenli Xu ,  Gang Wang ,  Gang Chen

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/05

CPC classification number: H01L31/186 ,  H01L31/022425 ,  H01L31/05

Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.

公开(公告)号：US12009440B2

公开(公告)日：2024-06-11

申请号：US18374819

申请日：2023-09-29

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang Chen ,  Wenli Xu ,  Kaifu Qiu ,  Yongqian Wang ,  Xinqiang Yang

IPC: H01L31/0216 ,  H01L31/0236 ,  H01L31/0352

CPC classification number: H01L31/02167 ,  H01L31/02363 ,  H01L31/035281

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

公开(公告)号：US11837671B2

公开(公告)日：2023-12-05

申请号：US18110915

申请日：2023-02-17

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang Chen ,  Wenli Xu ,  Kaifu Qiu ,  Yongqian Wang ,  Xinqiang Yang

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0236

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/035281

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

公开(公告)号：US11749761B2

公开(公告)日：2023-09-05

申请号：US17509049

申请日：2021-10-24

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang Chen ,  Wenli Xu ,  Kaifu Qiu ,  Yongqian Wang ,  Xinqiang Yang

IPC: H01L31/0216 ,  H01L31/068 ,  H01L31/0745

CPC classification number: H01L31/02167 ,  H01L31/0682 ,  H01L31/0745

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

公开(公告)号：US12218258B2

公开(公告)日：2025-02-04

申请号：US18645370

申请日：2024-04-25

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang Chen ,  Wenli Xu ,  Kaifu Qiu ,  Yongqian Wang ,  Xinqiang Yang

IPC: H01L31/0216 ,  H01L31/0236 ,  H01L31/0352

Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

公开(公告)号：US12211950B2

公开(公告)日：2025-01-28

申请号：US17862359

申请日：2022-07-11

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang Chen ,  Wenli Xu ,  Kaifu Qiu ,  Yongqian Wang ,  Xinqiang Yang

IPC: H01L31/18 ,  H01L31/05

Abstract: The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.

公开(公告)号：US11929441B2

公开(公告)日：2024-03-12

申请号：US17844709

申请日：2022-06-20

Applicant: Solarlab Aiko Europe GmbH

Inventor： Yongqian Wang ,  Wenli Xu ,  Jianjun Zhang ,  Jianbo Hong ,  Gang Chen

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/054

CPC classification number: H01L31/022425 ,  H01L31/05 ,  H01L31/0543

Abstract: A conductive contact structure of a solar cell is provided, includes a substrate; a semiconductor region; and an electrode. The semiconductor region is disposed on or in the substrate. The electrode is disposed in the semiconductor region. The electrode includes a seed layer in contact with the semiconductor region. The seed layer includes an alloy material, and includes a main component and an improved component. The main component is one or more metals having an average refractive index lower than 2 and a wavelength in a range of 850-1200 nm, and the improved component includes any one or more of Mo, Ni, Ti, W, Cr, Mn, Pd, Bi, Nb, Ta, Pa, Si, and V.

公开(公告)号：US11728454B1

公开(公告)日：2023-08-15

申请号：US17845962

申请日：2022-06-21

Applicant: Solarlab Aiko Europe GmbH

Inventor： Yongqian Wang ,  Ning Zhang ,  Wenli Xu ,  Gang Wang ,  Gang Chen

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/05

CPC classification number: H01L31/186 ,  H01L31/022425 ,  H01L31/05

Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.

公开(公告)号：US11489080B1

公开(公告)日：2022-11-01

申请号：US17509060

申请日：2021-10-24

Applicant: Solarlab Aiko Europe GmbH

Inventor： Gang Chen ,  Wenli Xu ,  Kaifu Qiu ,  Yongqian Wang ,  Xinqiang Yang

IPC: H01L31/0216 ,  H01L31/0236

Abstract: The disclosure provides a passivated contact structure and a solar cell including the same, a cell assembly and a photovoltaic system. The passivated contact structure includes a first passivated contact region on a silicon substrate and a second passivated contact region on the first passivated contact region. The second passivated contact region has an opening connecting a conductive layer to the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The first passivation layer is a porous structure inlaid with the first doped layer and/or the second doped layer in a hole region. Utilizing the passivated contact structure provided in this invention, mitigates the serious recombination caused by metal directly contacting with silicon substrate.