摘要:
A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.
摘要:
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要:
A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要:
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要:
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要:
A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要:
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要:
A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要:
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要:
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.