-
公开(公告)号:US20110006033A1
公开(公告)日:2011-01-13
申请号:US12502180
申请日:2009-07-13
申请人: Xilin Peng , Stacey Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
发明人: Xilin Peng , Stacey Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
IPC分类号: B44C1/22
CPC分类号: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/1278 , G11B5/3932 , G11B5/3967
摘要: A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要翻译: 描述制造磁性装置的方法。 在层叠感测堆叠上形成掩模移除层,并且在掩模移除层上形成硬掩模层。 使用非氧基化学法进行第一反应离子蚀刻,以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。 使用氧基化学法进行第二反应离子蚀刻,以使用限定的硬掩模层作为掩模来限定掩模去除停止层。 执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。 第三反应离子蚀刻包括蚀刻化学品,其在硬掩模层上的蚀刻速率低于分层感测叠层。
-
公开(公告)号:US08318030B2
公开(公告)日:2012-11-27
申请号:US12502180
申请日:2009-07-13
申请人: Xilin Peng , Stacey C. Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin R. Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
发明人: Xilin Peng , Stacey C. Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin R. Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
IPC分类号: B44C1/22
CPC分类号: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/1278 , G11B5/3932 , G11B5/3967
摘要: A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要翻译: 描述制造磁性装置的方法。 在层叠感测堆叠上形成掩模移除层,并且在掩模移除层上形成硬掩模层。 使用非氧基化学法进行第一反应离子蚀刻,以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。 使用氧基化学法进行第二反应离子蚀刻,以使用限定的硬掩模层作为掩模来限定掩模去除停止层。 执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。 第三反应离子蚀刻包括蚀刻化学品,其在硬掩模层上的蚀刻速率低于分层感测叠层。
-
公开(公告)号:US20130001721A1
公开(公告)日:2013-01-03
申请号:US13613006
申请日:2012-09-13
CPC分类号: H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译: 磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。 第一参考层侧具有比第二参考层侧更高的硼浓度。 氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。 氧化镁隧道势垒层具有晶体结构。 非晶铁磁自由层设置在氧化镁隧道势垒层上。
-
公开(公告)号:US20120217598A1
公开(公告)日:2012-08-30
申请号:US13465182
申请日:2012-05-07
IPC分类号: H01L29/82 , H01L21/8246
CPC分类号: H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译: 磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。 第一参考层侧具有比第二参考层侧更高的硼浓度。 氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。 氧化镁隧道势垒层具有晶体结构。 非晶铁磁自由层设置在氧化镁隧道势垒层上。
-
公开(公告)号:US20110006384A1
公开(公告)日:2011-01-13
申请号:US12501535
申请日:2009-07-13
CPC分类号: H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译: 磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。 第一参考层侧具有比第二参考层侧更高的硼浓度。 氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。 氧化镁隧道势垒层具有晶体结构。 非晶铁磁自由层设置在氧化镁隧道势垒层上。
-
公开(公告)号:US08294228B2
公开(公告)日:2012-10-23
申请号:US13465182
申请日:2012-05-07
CPC分类号: H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
-
公开(公告)号:US08183653B2
公开(公告)日:2012-05-22
申请号:US12501535
申请日:2009-07-13
CPC分类号: H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译: 磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。 第一参考层侧具有比第二参考层侧更高的硼浓度。 氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。 氧化镁隧道势垒层具有晶体结构。 非晶铁磁自由层设置在氧化镁隧道势垒层上。
-
公开(公告)号:US08513752B2
公开(公告)日:2013-08-20
申请号:US13613006
申请日:2012-09-13
IPC分类号: H01L29/82
CPC分类号: H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译: 磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。 第一参考层侧具有比第二参考层侧更高的硼浓度。 氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。 氧化镁隧道势垒层具有晶体结构。 非晶铁磁自由层设置在氧化镁隧道势垒层上。
-
公开(公告)号:US20110194213A1
公开(公告)日:2011-08-11
申请号:US12702045
申请日:2010-02-08
申请人: Kaizhong Gao , Xilin Peng , Zhongyan Wang , Yonghua Chen
发明人: Kaizhong Gao , Xilin Peng , Zhongyan Wang , Yonghua Chen
IPC分类号: G11B5/33
CPC分类号: G11B5/398 , G11B5/3912 , H01L43/08
摘要: In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.
摘要翻译: 在一些示例中,包括包括磁存储介质的数据存储构件的系统,所述磁存储介质具有在至少一个数据轨道上对准的多个磁位域,其中各个磁位域之间的过渡边界限定了转变曲率。 该系统还可以包括磁读取头,其包括靠近第一和第二屏蔽层设置的第一屏蔽层,第二屏蔽层和读取传感器堆叠,其中磁性读取头感测多个 根据读取播放灵敏度功能的磁性位域。 在一些示例中,屏蔽层和读取传感器堆叠可以被配置为提供基本对应于各个磁性位域的形状的读取器重放灵敏度功能。
-
公开(公告)号:US08896972B2
公开(公告)日:2014-11-25
申请号:US12702045
申请日:2010-02-08
申请人: Kaizhong Gao , Xilin Peng , Zhongyan Wang , Yonghua Chen
发明人: Kaizhong Gao , Xilin Peng , Zhongyan Wang , Yonghua Chen
CPC分类号: G11B5/398 , G11B5/3912 , H01L43/08
摘要: In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.
摘要翻译: 在一些示例中,包括包括磁存储介质的数据存储构件的系统,所述磁存储介质具有在至少一个数据轨道上对准的多个磁位域,其中各个磁位域之间的过渡边界限定了转变曲率。 该系统还可以包括磁读取头,其包括靠近第一和第二屏蔽层设置的第一屏蔽层,第二屏蔽层和读取传感器堆叠,其中磁性读取头感测多个 根据读取播放灵敏度功能的磁性位域。 在一些示例中,屏蔽层和读取传感器堆叠可以被配置为提供基本对应于各个磁性位域的形状的读取器重放灵敏度功能。
-
-
-
-
-
-
-
-
-