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    Vertical cavity surface emitting laser
    1.
    再颁专利
    Vertical cavity surface emitting laser 有权

    公开(公告)号：USRE48577E1

    公开(公告)日：2021-06-01

    申请号：US15895384

    申请日：2018-02-13

    Applicant: Sony Corporation

    Inventor： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/042

    Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

    LASER DIODE ARRAY, METHOD OF MANUFACTURING THE SAME, PRINTER, AND OPTICAL COMMUNICATION DEVICE
    4.
    发明申请
    LASER DIODE ARRAY, METHOD OF MANUFACTURING THE SAME, PRINTER, AND OPTICAL COMMUNICATION DEVICE 审中-公开
    激光二极管阵列，其制造方法，打印机和光通信设备

    公开(公告)号：US20160308333A1

    公开(公告)日：2016-10-20

    申请号：US15186932

    申请日：2016-06-20

    Applicant: Sony Corporation

    Inventor： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

    IPC: H01S5/42 ,  H01S5/042 ,  H01S5/02 ,  H01S5/343 ,  H01S5/187 ,  H01S5/183

    CPC classification number: H01S5/423 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/1838 ,  H01S5/187 ,  H01S5/34313 ,  H01S2304/04 ,  Y10S438/977

    Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

    Abstract translation: 提供一种制造能够抑制串扰的激光二极管阵列的方法。 制造激光二极管阵列的方法包括以下步骤：通过晶体生长从第一衬底侧顺序地在第一衬底上形成含有可氧化材料和垂直谐振器结构的剥离层，然后选择性地蚀刻剥离层和垂直 谐振器结构，从而处理成柱状，从侧面氧化剥离层的剥离步骤，然后从第一基板剥离柱状的垂直共振器结构，以及重新连接步骤，连接多个 将通过剥离步骤获得的柱状垂直共振器结构施加到在表面上形成有金属层的第二基板的金属层的表面上。

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