Photoelectric conversion element and imaging device

    公开(公告)号:US11581370B2

    公开(公告)日:2023-02-14

    申请号:US16964010

    申请日:2019-01-17

    Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

    OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS
    5.
    发明申请
    OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS 有权
    光学调制器,成像设备和显示设备

    公开(公告)号:US20150168747A1

    公开(公告)日:2015-06-18

    申请号:US14405709

    申请日:2013-05-15

    Abstract: There is provided an optical modulator capable of electrically controlling intensity of transmitted light in a desired wavelength range at a high speed and reducing the size of a device containing the optical modulator. The optical modulator includes first electrode; a second electrode; and a dielectric layer provided between the first and second electrodes. At least one of the first electrode and the second electrode comprises at least one layer of graphene. There are also provided an imaging device and a display apparatus each containing the optical modulator.

    Abstract translation: 提供了一种光调制器,其能够以高速电控制期望波长范围内的透射光的强度并且减小包含光学调制器的器件的尺寸。 光调制器包括第一电极; 第二电极; 以及设置在第一和第二电极之间的电介质层。 第一电极和第二电极中的至少一个包括至少一层石墨烯。 还提供了每个包含光学调制器的成像装置和显示装置。

    Imaging element, laminated imaging element, and solid-state imaging device

    公开(公告)号:US11430833B2

    公开(公告)日:2022-08-30

    申请号:US16637378

    申请日:2018-05-18

    Abstract: An imaging element includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a first semiconductor material layer 23B1 and a second semiconductor material layer 23B2 are formed from the first electrode side, and the second semiconductor material layer 23B2 is in contact with the photoelectric conversion layer 23A. The photoelectric conversion unit further includes an insulating layer 82 and a charge accumulation electrode 24 disposed apart from the first electrode 21 so as to face the first semiconductor material layer 23B1 via the insulating layer 82. When the carrier mobility of the first semiconductor material layer 23B1 is represented by μ1, and the carrier mobility of the second semiconductor material layer 23B2 is represented by μ2, μ2

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