公开(公告)号：US20150228685A1

公开(公告)日：2015-08-13

申请号：US14609601

申请日：2015-01-30

Applicant: Sony Corporation

Inventor： Shiro UCHIDA ,  Hideshi ABE ,  Tomomasa WATANABE ,  Hiroshi YOSHIDA

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/0224

CPC classification number: H01L31/022475 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14694 ,  H01L31/022466 ,  H01L31/105

Abstract: A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

Abstract translation: 光接收元件包括由入射光的第一化合物半导体构成的表面复合防止层; 由第二化合物半导体构成的光电转换层; 以及由第三化合物半导体构成的化合物半导体层，所述表面复合防止层的厚度为30nm以下。 此外，提供了包括光接收元件的图像捕获元件和包括图像捕获元件的图像捕获装置。

公开(公告)号：US20180374970A1

公开(公告)日：2018-12-27

申请号：US16102115

申请日：2018-08-13

Applicant: Sony Corporation ,  SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Tomomasa WATANABE ,  Hiroshi YOSHIDA ,  Masao IKEDA ,  Shiro UCHIDA ,  Ichiro NOMACHI ,  Masayuki ARIMOCHI ,  Hui YANG ,  Shulong LU ,  Xinhe ZHENG

IPC: H01L31/0224 ,  H01L33/00 ,  H01S5/343 ,  H01S5/18 ,  H01S5/042 ,  H01L33/42 ,  H01L33/38 ,  H01L33/32 ,  H01L33/30 ,  H01L31/18 ,  H01L31/0693 ,  H01L31/0304 ,  H01S5/183

Abstract: A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30A and a second surface 30B and made of a transparent conductive material, in which the second surface faces the first surface 30A, and the electrode is in contact, at the first surface 30A, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30A of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30B of the electrode 30.