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    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
    固态成像装置及其制造方法及电子装置

    公开(公告)号：US20160112614A1

    公开(公告)日：2016-04-21

    申请号：US14891947

    申请日：2014-06-20

    Applicant: SONY CORPORATION

    Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

    IPC: H04N5/225

    CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

    Abstract translation: 本公开内容涉及固态成像装置，其制造方法以及能够在抑制混色劣化的同时提高灵敏度的电子装置。 固态成像装置包括具有设置在二维布置的每个像素的光电转换区域的受光面侧的边界面上的飞蛾眼结构的防反射部， 阻挡部分设置在防反射部分的边界表面下方以阻挡入射光。 另外，光电转换区域是半导体区域，并且像素间阻挡部分具有通过在像素边界沿深度方向挖掘半导体区域而获得的沟槽结构。 根据本公开的技术可以应用于例如后表面照射型的固态成像装置。

    SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME
    10.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    固态图像拾取装置及其制造方法

    公开(公告)号：US20140231948A1

    公开(公告)日：2014-08-21

    申请号：US14259494

    申请日：2014-04-23

    Applicant: Sony Corporation

    Inventor： Keiji TATANI ,  Hideshi ABE ,  Masanori OHASHI ,  Atsushi MASAGAKI ,  Atsuhiko YAMAMOTO ,  Masakazu FURUKAWA

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14643

    Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

    Abstract translation: 固态图像拾取装置包括电隔离阱区表面上的像素的元件隔离绝缘膜; 电隔离元件隔离绝缘膜下面的像素的第一隔离扩散层; 以及第二隔离扩散层，电隔离第一隔离扩散层下方的像素，其中电荷累积区域设置在由第一和第二隔离扩散层围绕的阱区域中，第一隔离扩散层的内周部分形成 投影区域，具有第一隔离扩散层的导电类型的杂质和具有电荷累积区域的导电类型的杂质在投影区域中混合，并且电荷累积区域和第二隔离区域之间的电荷累积区域的一部分 隔离扩散层与突出区域下方的第二隔离扩散层抵接或靠近。

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