公开(公告)号：US20170141267A1

公开(公告)日：2017-05-18

申请号：US15317341

申请日：2015-04-17

Applicant: Sony Corporation

Inventor： Takashi TANGE ,  Tatsushi HAMAGUCHI ,  Masaru KURAMOTO

IPC: H01L33/32 ,  H01L33/16 ,  H01L33/00 ,  H01S5/343 ,  H01L33/06 ,  H01L33/42 ,  H01S5/042

CPC classification number: H01L33/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/40 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.

公开(公告)号：US20180190866A1

公开(公告)日：2018-07-05

申请号：US15893827

申请日：2018-02-12

Applicant: Sony Corporation

Inventor： Takashi TANGE ,  Tatsushi HAMAGUCHI ,  Masaru KURAMOTO

IPC: H01L33/32 ,  H01S5/343 ,  H01L33/06 ,  H01L33/42 ,  H01S5/042 ,  H01L33/00 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/40 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.

公开(公告)号：US20190148594A1

公开(公告)日：2019-05-16

申请号：US16227032

申请日：2018-12-20

Applicant: Sony Corporation

Inventor： Takashi TANGE ,  Tatsushi HAMAGUCHI ,  Masaru KURAMOTO

IPC: H01L33/32 ,  H01L21/28 ,  H01L33/06 ,  H01S5/343 ,  H01L33/40 ,  H01S5/042 ,  H01L33/42 ,  H01L33/16 ,  H01L33/00 ,  H01L21/205 ,  H01L21/20

CPC classification number: H01L33/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/40 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.