公开(公告)号：US20160111857A1

公开(公告)日：2016-04-21

申请号：US14933664

申请日：2015-11-05

Applicant: Sony Corporation

Inventor： Shunsuke KONO ,  Masaru KURAMOTO ,  Rintaro KODA

IPC: H01S5/065 ,  H01S3/23

CPC classification number: H01S5/0657 ,  H01S3/08004 ,  H01S3/08009 ,  H01S3/2308 ,  H01S5/0057 ,  H01S5/0078 ,  H01S5/0602 ,  H01S5/065 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/141 ,  H01S5/143 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/40 ,  H01S5/50

Abstract: A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

Abstract translation: 半导体激光器件组件包括：锁模半导体激光元件组件，其包括锁模半导体激光器元件和色散补偿光学系统，激光从锁模半导体激光器元件发射出射入其上; 发射激光; 以及半导体光放大器，其具有包括III-V族氮化物基半导体层的分层结构体，所述半导体光放大器被配置为放大从锁模半导体激光元件组件发射的激光。

公开(公告)号：US20170141267A1

公开(公告)日：2017-05-18

申请号：US15317341

申请日：2015-04-17

Applicant: Sony Corporation

Inventor： Takashi TANGE ,  Tatsushi HAMAGUCHI ,  Masaru KURAMOTO

IPC: H01L33/32 ,  H01L33/16 ,  H01L33/00 ,  H01S5/343 ,  H01L33/06 ,  H01L33/42 ,  H01S5/042

CPC classification number: H01L33/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/40 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.

公开(公告)号：US20180190866A1

公开(公告)日：2018-07-05

申请号：US15893827

申请日：2018-02-12

Applicant: Sony Corporation

Inventor： Takashi TANGE ,  Tatsushi HAMAGUCHI ,  Masaru KURAMOTO

IPC: H01L33/32 ,  H01S5/343 ,  H01L33/06 ,  H01L33/42 ,  H01S5/042 ,  H01L33/00 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/40 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.

公开(公告)号：US20170033533A1

公开(公告)日：2017-02-02

申请号：US15303344

申请日：2015-04-17

Applicant: Sony Corporation

Inventor： Tatsushi HAMAGUCHI ,  Noriyuki FUTAGAWA ,  Shoichiro IZUMI ,  Masaru KURAMOTO

IPC: H01S5/183 ,  H01S5/10 ,  H01S5/323 ,  G02B27/48

CPC classification number: H01S5/183 ,  G02B27/48 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/1092 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4087 ,  H01S5/423 ,  H01S2304/04 ,  H04N9/3161

Abstract: A light emitting element includes at least a first light reflecting layer 41 formed on a surface of a substrate 11, a laminated structural body 20 made of a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 formed on the first light reflecting layer 41, and a second electrode 32 and a second light reflecting layer 42 formed on the second compound semiconductor layer 22, the laminated structural body 20 is configured from a plurality of laminated structural body units 20A, a light emitting element unit 10A is configured from each of the laminated structural body units 20A, and a resonator length in the light emitting element unit 10A is different in every light emitting element unit.

Abstract translation: 发光元件至少包括形成在基板11的表面上的第一光反射层41，由第一化合物半导体层21，活性层23和第二化合物半导体层22构成的层叠结构体20 第一光反射层41和形成在第二化合物半导体层22上的第二电极32和第二光反射层42，层叠结构体20由多个层叠结构体单元20A，发光元件单元10A 由每个层叠结构体单元20A构成，并且发光元件单元10A中的谐振器长度在每个发光元件单元中不同。

公开(公告)号：US20190148594A1

公开(公告)日：2019-05-16

申请号：US16227032

申请日：2018-12-20

Applicant: Sony Corporation

Inventor： Takashi TANGE ,  Tatsushi HAMAGUCHI ,  Masaru KURAMOTO

IPC: H01L33/32 ,  H01L21/28 ,  H01L33/06 ,  H01S5/343 ,  H01L33/40 ,  H01S5/042 ,  H01L33/42 ,  H01L33/16 ,  H01L33/00 ,  H01L21/205 ,  H01L21/20

CPC classification number: H01L33/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/40 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.

公开(公告)号：US20180248339A1

公开(公告)日：2018-08-30

申请号：US15758674

申请日：2016-08-18

Applicant: Sony Corporation

Inventor： Shoichiro IZUMI ,  Tatsushi HAMAGUCHI ,  Noriyuki FUTAGAWA ,  Masaru KURAMOTO

IPC: H01S5/187 ,  H01S5/183 ,  H01S5/34 ,  H01S5/026

CPC classification number: H01S5/187 ,  H01S5/026 ,  H01S5/183 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/34 ,  H01S5/343

Abstract: A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.

公开(公告)号：US20140376575A1

公开(公告)日：2014-12-25

申请号：US14264773

申请日：2014-04-29

Applicant: Sony Corporation

Inventor： Shunsuke KONO ,  Masaru KURAMOTO ,  Rintaro KODA

IPC: H01S5/065 ,  H01S3/23

CPC classification number: H01S5/0657 ,  H01S3/08004 ,  H01S3/08009 ,  H01S3/2308 ,  H01S5/0057 ,  H01S5/0078 ,  H01S5/0602 ,  H01S5/065 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/141 ,  H01S5/143 ,  H01S5/22 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/40 ,  H01S5/50

Abstract: A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

Abstract translation: 半导体激光器件组件包括：锁模半导体激光元件组件，其包括锁模半导体激光器元件和色散补偿光学系统，激光从锁模半导体激光器元件发射出射入其上; 发射激光; 以及半导体光放大器，其具有包括III-V族氮化物基半导体层的层状结构体，所述半导体光放大器被配置为放大从锁模半导体激光元件组件发射的激光。

公开(公告)号：US20190157842A1

公开(公告)日：2019-05-23

申请号：US16259226

申请日：2019-01-28

Applicant: Sony Corporation

Inventor： Tatsushi HAMAGUCHI ,  Noriyuki FUTAGAWA ,  Shoichiro IZUMI ,  Masaru KURAMOTO

IPC: H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  H01S5/10 ,  H01S5/32

Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

公开(公告)号：US20180212402A1

公开(公告)日：2018-07-26

申请号：US15860211

申请日：2018-01-02

Applicant: Sony Corporation

Inventor： Tatsushi HAMAGUCHI ,  Noriyuki FUTAGAWA ,  Shoichiro IZUMI ,  Masaru KURAMOTO

IPC: H01S5/183 ,  H01S5/32 ,  H01S5/42 ,  H01S5/323 ,  H01S5/10 ,  H01S5/042 ,  H01S5/02 ,  H01S5/343 ,  H01S5/40 ,  G02B27/48 ,  H04N9/31

CPC classification number: H01S5/183 ,  G02B27/48 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/1092 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4087 ,  H01S5/423 ,  H01S2304/04 ,  H04N9/3161

Abstract: A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.

公开(公告)号：US20150236474A1

公开(公告)日：2015-08-20

申请号：US14623223

申请日：2015-02-16

Applicant: Sony Corporation

Inventor： Shunsuke KONO ,  Masaru KURAMOTO ,  Takao MIYAJIMA ,  Rintaro KODA ,  Hideki WATANABE

IPC: H01S5/00 ,  H01S3/08 ,  H01S5/14 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/0085 ,  H01S3/08009 ,  H01S3/08059 ,  H01S3/105 ,  H01S3/1118 ,  H01S5/0057 ,  H01S5/0078 ,  H01S5/06253 ,  H01S5/0657 ,  H01S5/1025 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/143 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/50 ,  H01S2301/08

Abstract: Disclosed is a semiconductor laser device assembly including a semiconductor laser device; and a dispersion compensation optical system, where a laser light exited from the semiconductor laser device is incident and exits to control a group velocity dispersion value of the laser light exited from the semiconductor laser device per wavelength.

Abstract translation: 公开了一种包括半导体激光器件的半导体激光器件组件; 以及从半导体激光器件退出的激光入射并离开的色散补偿光学系统，以控制每半波长从半导体激光器件退出的激光的群速度色散值。