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公开(公告)号：US20220264052A1
公开(公告)日：2022-08-18
申请号：US17738340
申请日：2022-05-06
发明人： Takashi Moue , Hiroaki Yatsuda
IPC分类号： H04N5/3745 , H01L27/146 , H04N5/357 , H04N5/378
摘要： It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.
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公开(公告)号：US20230353907A1
公开(公告)日：2023-11-02
申请号：US18018694
申请日：2021-07-14
发明人： Takashi Moue , Takuro Kosaka
摘要： Provided are an imaging device capable of suppressing an error in inversion timing of a comparison result when an analog pixel signal is compared with a predetermined reference signal, and an electronic apparatus including the imaging device. An imaging device of the present disclosure includes: a load current source; a comparator that has an input transistor connected between the load current source and a signal line transmitting a signal read from a pixel; a first capacitor that inputs a predetermined reference signal to a gate electrode of the input transistor; and a second capacitor connected between the gate electrode of the input transistor and a reference potential node. Furthermore, an electronic apparatus of the present disclosure includes the imaging device having the above-described configuration.
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公开(公告)号：US20230336893A1
公开(公告)日：2023-10-19
申请号：US18195114
申请日：2023-05-09
发明人： Takashi Moue , Yosuke Ueno
IPC分类号： H04N25/772 , H04N25/57 , H04N25/75 , H04N25/709
CPC分类号： H04N25/772 , H04N25/57 , H04N25/709 , H04N25/75
摘要： A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.
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公开(公告)号：US20230247329A1
公开(公告)日：2023-08-03
申请号：US18132346
申请日：2023-04-07
发明人： Atsumi Niwa , Tomonori Yamashita , Takashi Moue , Yosuke Ueno
IPC分类号： H04N25/772 , H03K5/24 , H03M1/34 , H04N25/75
CPC分类号： H04N25/772 , H03K5/2481 , H03M1/34 , H04N25/75
摘要： Provided is an image sensor including: a pixel section configured to include a plurality of pixels arranged therein; and an AD conversion unit configured to perform analog-to-digital (AD) conversion on a pixel signal on the basis of a result of comparison between a first voltage of a signal, which is obtained by adding, via capacitances, the pixel signal of the pixel and a reference signal that linearly changes in a direction opposite to the pixel signal, with a second voltage serving as a reference.
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公开(公告)号：US20210368125A1
公开(公告)日：2021-11-25
申请号：US17326242
申请日：2021-05-20
发明人： Atsumi Niwa , Tomonori Yamashita , Takashi Moue , Yosuke Ueno
IPC分类号： H04N5/3745 , H03K5/24 , H03M1/34 , H04N5/378
摘要： Provided is an image sensor including: a pixel section configured to include a plurality of pixels arranged therein; and an AD conversion unit configured to perform analog-to-digital (AD) conversion on a pixel signal on the basis of a result of comparison between a first voltage of a signal, which is obtained by adding, via capacitances, the pixel signal of the pixel and a reference signal that linearly changes in a direction opposite to the pixel signal, with a second voltage serving as a reference.
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公开(公告)号：US12126925B2
公开(公告)日：2024-10-22
申请号：US17783707
申请日：2020-09-15
发明人： Yoshio Awatani , Yosuke Ueno , Takashi Moue
IPC分类号： H04N25/75 , H01L27/146 , H04N25/709 , H04N25/772
CPC分类号： H04N25/75 , H01L27/14612 , H01L27/14643 , H04N25/709 , H04N25/772
摘要： Provided is a solid-state imaging element including a pixel circuit and a comparison transistor. In the solid-state imaging element, the pixel circuit generates a pixel signal and outputs the pixel signal to a vertical signal line. Further, the comparison transistor has a source connected to a constant current source configured to supply a constant current to the vertical signal line. The comparison transistor has a gate to which a predetermined reference signal is input. Further, the comparison transistor has a drain from which a comparison result between the pixel signal and the reference signal is output.
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公开(公告)号：US11962927B2
公开(公告)日：2024-04-16
申请号：US18195114
申请日：2023-05-09
发明人： Takashi Moue , Yosuke Ueno
IPC分类号： H04N25/772 , H04N25/57 , H04N25/709 , H04N25/75
CPC分类号： H04N25/772 , H04N25/57 , H04N25/709 , H04N25/75
摘要： A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.
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公开(公告)号：US11418749B2
公开(公告)日：2022-08-16
申请号：US16647048
申请日：2018-09-04
发明人： Takashi Moue , Yosuke Ueno , Tomonori Yamashita , Kazunori Hasebe
IPC分类号： H04N5/378 , H01L27/146 , H04N5/374 , H04N5/369
摘要： A solid-state image pick-up device of the present disclosure includes a pixel array unit obtained by disposing a plurality of unit pixels, each of which includes a photoelectric conversion unit, in a matrix form, an amplifier unit that adjusts a level of a pixel signal output from a unit pixel through a vertical signal line provided to correspond to column arrangement of the pixel array unit, a sample and hold unit that samples and holds a pixel signal passing through the amplifier unit, and an analog-digital conversion unit that converts the pixel signal output from the sample and hold unit into a digital signal. Further, the sample and hold unit includes at least three capacitors that hold pixel signals and performs fetching of a pixel signal to one capacitor and outputting of an image signal fetched to another capacitor in advance to the analog-digital conversion unit in parallel.
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公开(公告)号：US20220166949A1
公开(公告)日：2022-05-26
申请号：US17430842
申请日：2019-11-14
发明人： Takashi Moue , Yosuke Ueno
IPC分类号： H04N5/3745 , H04N5/355 , H04N5/378 , H04N5/369
摘要： A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.
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公开(公告)号：US20210258532A1
公开(公告)日：2021-08-19
申请号：US17261319
申请日：2019-06-27
发明人： Takashi Moue , Hiroaki Yatsuda
IPC分类号： H04N5/3745 , H04N5/357 , H01L27/146
摘要： It is an object of the present technology to provide an image sensor capable of reducing crosstalk in an AD conversion unit. The image sensor includes: capacitors in an even-numbered column region; and a capacitor in an odd-numbered column region disposed facing the capacitors in the even-numbered column region with different areas.
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