公开(公告)号：US20110186815A1

公开(公告)日：2011-08-04

申请号：US13083990

申请日：2011-04-11

申请人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

发明人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC分类号： H01L29/15

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

摘要翻译： 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US20090146132A1

公开(公告)日：2009-06-11

申请号：US12188698

申请日：2008-08-08

申请人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

发明人： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

摘要翻译： 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US20100176374A1

公开(公告)日：2010-07-15

申请号：US12352941

申请日：2009-01-13

申请人： Jae Woong HAN ,  Hee Seok PARK ,  Seong Suk LEE ,  Soo Min LEE

发明人： Jae Woong HAN ,  Hee Seok PARK ,  Seong Suk LEE ,  Soo Min LEE

IPC分类号： H01L29/66

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor device according to an aspect of the invention may include: first and second conductive nitride semiconductor layers; and an active layer having a DH structure located between the first and second conductive nitride semiconductor layers, and including a single quantum well structure active layer having the single quantum well structure includes at least one polarization relaxation layer formed of a nitride single crystal having a higher energy band gap than the quantum well.

摘要翻译： 根据本发明的一个方面的氮化物半导体器件可以包括：第一和第二导电氮化物半导体层; 并且具有位于第一和第二导电氮化物半导体层之间的DH结构的有源层，并且包括具有单量子阱结构的单量子阱结构有源层包括至少一个偏振弛豫层，该偏振弛豫层由具有较高 能带隙比量子阱。

公开(公告)号：US20090278113A1

公开(公告)日：2009-11-12

申请号：US12333531

申请日：2008-12-12

申请人： Hun Jae CHUNG ,  Cheol Soo SONE ,  Sung Hwan JANG ,  Rak Jun CHOI ,  Soo Min LEE

发明人： Hun Jae CHUNG ,  Cheol Soo SONE ,  Sung Hwan JANG ,  Rak Jun CHOI ,  Soo Min LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0

摘要翻译： 提供了一种氮化物半导体发光器件。 根据本发明的一个方面的氮化物半导体发光器件可以包括：设置在衬底上的n型氮化物半导体层; 设置在n型氮化物半导体层上的有源层，并且包括量子势垒层和量子阱层; 以及设置在有源层上的p型氮化物半导体层，其中每个量子势垒层包括多个In x Ga（1-x）N层（0

公开(公告)号：US20090258453A1

公开(公告)日：2009-10-15

申请号：US12489819

申请日：2009-06-23

申请人： Soo Min LEE ,  Cheol Kyu KIM ,  Jaeun YOO ,  Sung Hwan JANG ,  Masayoshi KOIKE

发明人： Soo Min LEE ,  Cheol Kyu KIM ,  Jaeun YOO ,  Sung Hwan JANG ,  Masayoshi KOIKE

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079

摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

摘要翻译： 在制造氮化物类化合物层的方法中，首先制备GaN衬底。 在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。 然后在部分曝光的GaN衬底上形成缓冲层。 缓冲层由具有10％以下与GaN的晶格失配的材料制成。 此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。 此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。