ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 失效
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号:US20110014736A1

    公开(公告)日:2011-01-20

    申请号:US12889613

    申请日:2010-09-24

    IPC分类号: H01L51/56

    摘要: An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.

    摘要翻译: 有机薄膜晶体管(“TFT”)阵列面板包括基板,沿第一方向延伸的栅极线,与第二方向延伸并与栅极线绝缘的绝缘的数据线,连接到数据的源电极 线路,面对源电极的漏电极,连接到漏电极的像素电极和连接到源电极和漏电极的有机半导体,由具有感光性的有机材料制成的有机半导体。

    THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
    用于液晶显示器的薄膜晶体管阵列及其制造方法

    公开(公告)号:US20080035971A1

    公开(公告)日:2008-02-14

    申请号:US11750630

    申请日:2007-05-18

    IPC分类号: H01L29/76 H01L21/00

    摘要: Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.

    摘要翻译: 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。

    THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND A METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
    用于液晶显示器的薄膜晶体管阵列板及其制造方法

    公开(公告)号:US20090179202A1

    公开(公告)日:2009-07-16

    申请号:US12364736

    申请日:2009-02-03

    IPC分类号: H01L33/00

    摘要: Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.

    摘要翻译: 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。

    THIN FILM TRANSISTOR ARRAY PANEL USING ORGANIC SEMICONDUCTOR AND A METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL USING ORGANIC SEMICONDUCTOR AND A METHOD FOR MANUFACTURING THE SAME 有权
    使用有机半导体的薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US20110084260A1

    公开(公告)日:2011-04-14

    申请号:US12971872

    申请日:2010-12-17

    IPC分类号: H01L51/05 H01L21/84

    CPC分类号: H01L51/0545 H01L51/0021

    摘要: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.

    摘要翻译: 本发明公开了一种有机薄膜晶体管,有机薄膜晶体管阵列基板和有机薄膜晶体管显示器。 本发明公开了适用于大屏幕显示器的有机材料。 本发明还公开了制造这种有机薄膜晶体管,有机薄膜晶体管阵列基板和有机薄膜晶体管显示器的结构和方法。