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    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 失效
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号：US20110014736A1

    公开(公告)日：2011-01-20

    申请号：US12889613

    申请日：2010-09-24

    申请人： Bo-Sung KIM ,  Mun-Pyo HONG ,  Woo-Jae LEE

    发明人： Bo-Sung KIM ,  Mun-Pyo HONG ,  Woo-Jae LEE

    IPC分类号： H01L51/56

    CPC分类号： H01L51/428 ,  H01L27/307 ,  H01L27/3244 ,  H01L51/0545 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

    摘要： An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.

    摘要翻译： 有机薄膜晶体管（“TFT”）阵列面板包括基板，沿第一方向延伸的栅极线，与第二方向延伸并与栅极线绝缘的绝缘的数据线，连接到数据的源电极 线路，面对源电极的漏电极，连接到漏电极的像素电极和连接到源电极和漏电极的有机半导体，由具有感光性的有机材料制成的有机半导体。

    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号：US20110039363A1

    公开(公告)日：2011-02-17

    申请号：US12911621

    申请日：2010-10-25

    申请人： Bo-Sung KIM ,  Yong-Uk Lee ,  Mun-Pyo Hong

    发明人： Bo-Sung KIM ,  Yong-Uk Lee ,  Mun-Pyo Hong

    IPC分类号： H01L51/40

    CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator.

    摘要翻译： 根据本发明实施例的有机薄膜晶体管阵列面板包括：基板; 设置在所述基板上的数据线; 绝缘层，设置在所述数据线上并具有暴露所述数据线的接触孔; 第一电极，设置在绝缘层上并通过接触孔连接到数据线; 设置在所述绝缘层上的第二电极; 布置在第一和第二电极上的有机半导体; 设置在所述有机半导体上的栅极绝缘体; 以及设置在栅极绝缘体上的栅电极。

    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 失效
    有机薄膜晶体管阵列及其制造方法

    公开(公告)号：US20110248255A1

    公开(公告)日：2011-10-13

    申请号：US13164906

    申请日：2011-06-21

    申请人： Bo-Sung KIM ,  Woo-Jae LEE ,  Min-Seong RYU

    发明人： Bo-Sung KIM ,  Woo-Jae LEE ,  Min-Seong RYU

    IPC分类号： H01L27/28

    CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/5237

    摘要： A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.

    摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线，漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层，数据线和漏电极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极，所述像素电极通过所述接触孔连接到所述漏电极。

    METHOD AND APPARATUS FOR MANAGING AN APPLICATION BEING EXECUTED IN A PORTABLE TERMINAL
    5.
    发明申请
    METHOD AND APPARATUS FOR MANAGING AN APPLICATION BEING EXECUTED IN A PORTABLE TERMINAL 有权
    用于管理便携式终端中执行的应用程序的方法和装置

    公开(公告)号：US20110296418A1

    公开(公告)日：2011-12-01

    申请号：US13115881

    申请日：2011-05-25

    申请人： Bo-Sung KIM ,  Jong-Kyun SHIN ,  Hee-Deog KIM ,  Hyung-Chul JUNG

    发明人： Bo-Sung KIM ,  Jong-Kyun SHIN ,  Hee-Deog KIM ,  Hyung-Chul JUNG

    IPC分类号： G06F9/46

    CPC分类号： G06F3/04842 ,  G06F3/04817 ,  G06F11/328 ,  G06F11/3409 ,  Y02D10/34

    摘要： A method and an apparatus are provided for preventing battery power consumption and degradation of system performance due to the system resources being utilized by applications being executed, while providing a multi-tasking function through a plurality of applications. In the method, when a plurality of applications are executed, such execution of the plurality of applications is reported to the user, so as to enable the user to terminate one or more applications, thereby preventing unnecessary consumption of battery power.

    摘要翻译： 提供了一种方法和装置，用于防止电池电力消耗和系统性能的恶化，这是由于正被执行的应用程序正在利用的系统资源，同时通过多个应用提供多任务功能。 在该方法中，当执行多个应用时，向用户报告多个应用的​​执行，以使用户能够终止一个或多个应用，从而防止不必要的电池电力消耗。

    FLAT PANEL DISPLAY AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY
    6.
    发明申请
    FLAT PANEL DISPLAY AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY 有权
    平板显示器的平板显示和制造方法

    公开(公告)号：US20090111211A1

    公开(公告)日：2009-04-30

    申请号：US12325951

    申请日：2008-12-01

    申请人： Bo-Sung KIM ,  Joon-hak Oh ,  Yoag-uk Lee

    发明人： Bo-Sung KIM ,  Joon-hak Oh ,  Yoag-uk Lee

    IPC分类号： H01L51/40 ,  H01J9/00 ,  H01L21/70

    CPC分类号： H01L51/0533

    摘要： The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

    摘要翻译： 本公开涉及包括绝缘基板的显示装置; 绝缘基板上的源电极和漏极，并由沟道区分离; 有机半导体层，其形成在所述沟道区域中以及所述源电极和所述漏电极的至少一部分的至少一部分上; 以及具有设置在有机半导体层和源电极之间的第一部分的自组装单层和设置在有机半导体层和漏电极之间的第二部分，以减小电极和有机半导体层之间的接触电阻。 因此，本发明的实施例提供了一种显示装置，其包括增强其性能的TFT。

    METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE, AND DISPLAY SUBSTRATE
    8.
    发明申请
    METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE, AND DISPLAY SUBSTRATE 有权
    制造薄膜晶体管的方法，制造显示基板的方法和显示基板

    公开(公告)号：US20130234169A1

    公开(公告)日：2013-09-12

    申请号：US13619075

    申请日：2012-09-14

    申请人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

    发明人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

    摘要： In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

    摘要翻译： 在制造薄膜晶体管的方法中，在具有栅电极的基底基板的快速表面上，在基底基板的第一表面，氧化物半导体层，绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图，以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上，并且蚀刻停止器，源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此，当形成活性图案和蚀刻停止物时，可以通过省略掩模来降低制造成本。