公开(公告)号：US07482057B2

公开(公告)日：2009-01-27

申请号：US10731818

申请日：2003-12-09

申请人： Stephen Y. Chou ,  Lei Zhuang

发明人： Stephen Y. Chou ,  Lei Zhuang

IPC分类号： B32B7/12

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T156/1002 ,  Y10T428/1157 ,  Y10T428/268

摘要： The present invention is directed to a lithographic method and apparatus for creating micrometer sub-micrometer patterns in a thin film coated on a substrate. The invention utilizes the self-formation of periodic, supramolecular pillar arrays (49) in a melt to form the patterns. The self-formation is induced by placing a plate or mask (35) a distance above the polymer films (33). The pillars bridge the plate and the mask, having a height equal to the plate-mask separation and preferably 2-7 times that of the film's initial thickness. If the surface of the mask has a protruding pattern, the pillar array is formed with the edge of the pillar array aligned to the boundary of the mask pattern.

摘要翻译： 本发明涉及一种用于在涂覆在基底上的薄膜中产生微米亚微米图案的光刻方法和装置。 本发明利用周期性超分子柱阵列（49）在熔体中的自形成以形成图案。 通过将板或掩模（35）放置在聚合物膜（33）上方一段距离来诱导自形成。 柱子桥接板和面具，其高度等于平板掩模分离，优选为膜初始厚度的2-7倍。 如果掩模的表面具有突出图案，则柱阵列形成为与阵列图案的边界对准的柱阵列的边缘。

公开(公告)号：US06713238B1

公开(公告)日：2004-03-30

申请号：US09807266

申请日：2001-06-11

申请人： Stephen Y. Chou ,  Lei Zhuang

发明人： Stephen Y. Chou ,  Lei Zhuang

IPC分类号： G03F700

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T156/1002 ,  Y10T428/1157 ,  Y10T428/268

摘要： The formation of self-assembled patterns in a substrate through deformation induce by a mask placed above the substrate are disclosed. Methods of the present invention may be used to form arrays of nanometer sized pillars as well as mesas from a thin deformable layer of the substrate or a thin film of material deposited on the substrate.

摘要翻译： 公开了通过由放置在衬底上方的掩模引起的变形而在衬底中形成自组装图案。 本发明的方法可以用于形成纳米尺寸的柱的阵列以及来自基底的薄的可变形层的台面或沉积在基底上的材料的薄膜。

公开(公告)号：US20090084492A1

公开(公告)日：2009-04-02

申请号：US12136964

申请日：2008-06-11

申请人： Stephen Y. Chou ,  Lei Zhuang

发明人： Stephen Y. Chou ,  Lei Zhuang

IPC分类号： B32B37/04

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T156/1002 ,  Y10T428/1157 ,  Y10T428/268

摘要： The present invention is directed to a lithographic method and apparatus for creating micrometer sub-micrometer patterns in a thin film coated on a substrate. The invention utilizes the self-formation of periodic, supramolecular pillar arrays (49) in a melt to form the patterns. The self-formation is induced by placing a plate or mask (35) a distance above the polymer films (33). The pillars bridge the plate and the mask, having a height equal to the plate-mask separation and preferably 2-7 times that of the film's initial thickness. If the surface of the mask has a protruding pattern, the pillar array is formed with the edge of the pillar array aligned to the boundary of the mask pattern.

摘要翻译： 本发明涉及一种用于在涂覆在基底上的薄膜中产生微米亚微米图案的光刻方法和装置。 本发明利用周期性超分子柱阵列（49）在熔体中的自形成以形成图案。 通过将板或掩模（35）放置在聚合物膜（33）上方一段距离来诱导自形成。 柱子桥接板和面具，其高度等于平板掩模分离，优选为膜初始厚度的2-7倍。 如果掩模的表面具有突出图案，则柱阵列形成为与阵列图案的边界对准的柱阵列的边缘。

公开(公告)号：US20130270709A1

公开(公告)日：2013-10-17

申请号：US13443963

申请日：2012-04-11

申请人： Chiahsun Tseng ,  Jin Liu ,  Lei Zhuang

发明人： Chiahsun Tseng ,  Jin Liu ,  Lei Zhuang

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L23/481 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/743 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

摘要翻译： 第一光致抗蚀剂层被图案化，第一图案包括在要形成的两个相邻通孔的区域之间的区域中的开口。 将第一光致抗蚀剂中的开口转移到模板层中以在其中形成线沟槽。 通过沉积不完全填充沟槽的连续间隔层来减小沟槽的横向尺寸。 保形地沉积耐蚀刻材料层并填充沟槽，随后凹入以形成填充沟槽的耐蚀刻材料部分。 施加第二光致抗蚀剂层并用第二图案图案化，其包括包括两个通孔的区域和其间的区域的开口。 第二图案与耐蚀刻材料部分的图案的互补点的复合图案通过模板层传送。

公开(公告)号：US09245788B2

公开(公告)日：2016-01-26

申请号：US13443963

申请日：2012-04-11

申请人： Chiahsun Tseng ,  Jin Liu ,  Lei Zhuang

发明人： Chiahsun Tseng ,  Jin Liu ,  Lei Zhuang

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L21/74 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L23/481 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/743 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76897 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

摘要翻译： 第一光致抗蚀剂层被图案化，第一图案包括在要形成的两个相邻通孔的区域之间的区域中的开口。 将第一光致抗蚀剂中的开口转移到模板层中以在其中形成线沟槽。 通过沉积不完全填充沟槽的连续间隔层来减小沟槽的横向尺寸。 保形地沉积耐蚀刻材料层并填充沟槽，随后凹入以形成填充沟槽的耐蚀刻材料部分。 施加第二光致抗蚀剂层并用第二图案图案化，其包括包括两个通孔的区域和其间的区域的开口。 第二图案与耐蚀刻材料部分的图案的互补点的复合图案通过模板层传送。