公开(公告)号：US07297453B2

公开(公告)日：2007-11-20

申请号：US11394900

申请日：2006-03-31

申请人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

发明人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F1/84 ,  G03F1/36 ,  Y10S430/146

摘要： Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

摘要翻译： 公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。 通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

公开(公告)号：US07303842B2

公开(公告)日：2007-12-04

申请号：US11394901

申请日：2006-03-31

申请人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin ,  Larry S. Zurbrick

发明人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin ,  Larry S. Zurbrick

IPC分类号： G03F9/00

CPC分类号： G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

摘要： Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

摘要翻译： 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：US07300729B2

公开(公告)日：2007-11-27

申请号：US11394145

申请日：2006-03-29

申请人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

发明人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

IPC分类号： G03F9/00 ,  G06K9/00

CPC分类号： G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

摘要： Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may “heal” the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.

摘要翻译： 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技​​术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

公开(公告)号：US07300725B2

公开(公告)日：2007-11-27

申请号：US11394177

申请日：2006-03-29

申请人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

发明人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

IPC分类号： G03F9/00

CPC分类号： G03F1/84 ,  Y10S430/146

摘要： Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

摘要翻译： 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。 在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。 在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

公开(公告)号：US07440093B1

公开(公告)日：2008-10-21

申请号：US11838139

申请日：2007-08-13

申请人： Yalin Xiong ,  Zain K. Saidin ,  Sterling G. Watson

发明人： Yalin Xiong ,  Zain K. Saidin ,  Sterling G. Watson

IPC分类号： G01N21/88 ,  G06K9/00

CPC分类号： G01N21/9501 ,  G03F1/84 ,  H01L21/67242

摘要： Disclosed are techniques and apparatus for accounting for differing levels of defect susceptibility in different pattern areas of a reticle in an inspection of such reticle or in inspection of a semiconductor device fabricated from such reticle. In general terms, two or more areas of a reticle are analyzed to quantify each area's susceptibility to defects on the final semiconductor product. That is, each reticle area is analyzed and given a quantified defect susceptibility value, such as a MEEF (mask error enhancement factor) value. Such analysis includes analysis of an image that is estimated to result from the lithography tool which is to be utilized to expose semiconductor devices with the reticle. The defect susceptibility value generally depends on the reticle area's density and whether the correspond area of the estimated lithography image has intensity values which are proximate to an exposure threshold for a particular resist material to be used on the final semiconductor device. The quantified defect susceptibility for each reticle area is then used to selectively set the inspection sensitivity for each reticle area or its corresponding semiconductor device region. The reticle and/or resulting semiconductor device may then be inspected based on the selected sensitivity levels for the different areas of the sample under test.

摘要翻译： 公开了用于在对这种掩模版进行检查或检查由该掩模版制造的半导体器件的掩模版的不同图案区域中不同级别的缺陷敏感性的技术和装置。 一般来说，分析光栅的两个或更多个区域以量化每个区域对最终半导体产品上的缺陷的敏感性。 也就是说，对每个掩模版区域进行分析并给出量化的缺陷敏感性值，例如MEEF（掩模误差增强因子）值。 这样的分析包括对由光刻工具估算出的图像的分析，该图像工具将用于将掩模版露出半导体器件。 缺陷敏感性值通常取决于掩模版面积的密度，以及估计的光刻图像的对应面积是否具有接近用于最终半导体器件的特定抗蚀剂材料的曝光阈值的强度值。 然后使用每个标线片区域的量化的缺陷敏感度来选择性地设置每个掩模版区域或其对应的半导体器件区域的检查灵敏度。 然后可以基于所测试的样品的不同区域的选择的灵敏度水平检查掩模版和/或所得到的半导体器件。

公开(公告)号：US07271891B1

公开(公告)日：2007-09-18

申请号：US10928585

申请日：2004-08-26

申请人： Yalin Xiong ,  Zain K. Saidin ,  Sterling G. Watson

发明人： Yalin Xiong ,  Zain K. Saidin ,  Sterling G. Watson

IPC分类号： G01N21/88 ,  G06K9/00

CPC分类号： G01N21/9501 ,  G03F1/84 ,  H01L21/67242

摘要： Disclosed are techniques and apparatus for accounting for differing levels of defect susceptibility in different pattern areas of a reticle in an inspection of such reticle or in inspection of a semiconductor device fabricated from such reticle. In general terms, two or more areas of a reticle are analyzed to quantify each area's susceptibility to defects on the final semiconductor product. That is, each reticle area is analyzed and given a quantified defect susceptibility value, such as a MEEF (mask error enhancement factor) value. Such analysis includes analysis of an image that is estimated to result from the lithography tool which is to be utilized to expose semiconductor devices with the reticle. The defect susceptibility value generally depends on the reticle area's density and whether the correspond area of the estimated lithography image has intensity values which are proximate to an exposure threshold for a particular resist material to be used on the final semiconductor device. The quantified defect susceptibility for each reticle area is then used to selectively set the inspection sensitivity for each reticle area or its corresponding semiconductor device region. The reticle and/or resulting semiconductor device may then be inspected based on the selected sensitivity levels for the different areas of the sample under test.

摘要翻译： 公开了用于在对这种掩模版进行检查或检查由该掩模版制造的半导体器件的掩模版的不同图案区域中不同级别的缺陷敏感性的技术和装置。 一般来说，分析光栅的两个或更多个区域以量化每个区域对最终半导体产品上的缺陷的敏感性。 也就是说，对每个掩模版区域进行分析并给出量化的缺陷敏感性值，例如MEEF（掩模误差增强因子）值。 这样的分析包括对由光刻工具估算出的图像的分析，该图像工具将用于将掩模版露出半导体器件。 缺陷敏感性值通常取决于掩模版面积的密度，以及估计的光刻图像的对应面积是否具有接近用于最终半导体器件的特定抗蚀剂材料的曝光阈值的强度值。 然后使用每个标线片区域的量化的缺陷敏感度来选择性地设置每个掩模版区域或其对应的半导体器件区域的检查灵敏度。 然后可以基于所测试的样品的不同区域的选择的灵敏度水平检查掩模版和/或所得到的半导体器件。

公开(公告)号：US07904845B2

公开(公告)日：2011-03-08

申请号：US11950961

申请日：2007-12-05

申请人： Christophe Fouquet ,  Gordon Abbott ,  Ellis Chang ,  Zain K. Saidin

发明人： Christophe Fouquet ,  Gordon Abbott ,  Ellis Chang ,  Zain K. Saidin

IPC分类号： G06F17/50

CPC分类号： G03F1/84 ,  G03F7/7065

摘要： Various methods, designs, defect review tools, and systems for determining locations on a wafer to be reviewed during defect review are provided. One computer-implemented method includes acquiring coordinates of defects detected by two or more inspection systems. The defects do not include defects detected on the wafer. The method also includes determining coordinates of the locations on the wafer to be reviewed during the defect review by translating the coordinates of the defects into the coordinates on the wafer such that results of the defect review performed at the locations can be used to determine if the defects cause systematic defects on the wafer.

摘要翻译： 提供了各种方法，设计，缺陷评估工具和用于在缺陷评估期间确定待检查的晶片上的位置的系统。 一种计算机实现的方法包括获取由两个或更多个检查系统检测到的缺陷的坐标。 缺陷不包括在晶片上检测到的缺陷。 该方法还包括通过将缺陷的坐标转换为晶片上的坐标来确定在缺陷审查期间待审查的晶片上的位置的坐标，使得可以使用在位置处执行的缺陷评估的结果来确定是否 缺陷导致晶片上的系统缺陷。

公开(公告)号：US20080163140A1

公开(公告)日：2008-07-03

申请号：US11950961

申请日：2007-12-05

申请人： Christophe Fouquet ,  Gordon Abbott ,  Ellis Chang ,  Zain K. Saidin

发明人： Christophe Fouquet ,  Gordon Abbott ,  Ellis Chang ,  Zain K. Saidin

IPC分类号： G06F17/50

CPC分类号： G03F1/84 ,  G03F7/7065

摘要： Various methods, designs, defect review tools, and systems for determining locations on a wafer to be reviewed during defect review are provided. One computer-implemented method includes acquiring coordinates of defects detected by two or more inspection systems. The defects do not include defects detected on the wafer. The method also includes determining coordinates of the locations on the wafer to be reviewed during the defect review by translating the coordinates of the defects into the coordinates on the wafer such that results of the defect review performed at the locations can be used to determine if the defects cause systematic defects on the wafer.

摘要翻译： 提供了各种方法，设计，缺陷评估工具和用于在缺陷评估期间确定待检查的晶片上的位置的系统。 一种计算机实现的方法包括获取由两个或更多个检查系统检测到的缺陷的坐标。 缺陷不包括在晶片上检测到的缺陷。 该方法还包括通过将缺陷的坐标转换为晶片上的坐标来确定在缺陷审查期间待审查的晶片上的位置的坐标，使得可以使用在位置处执行的缺陷检查的结果来确定是否 缺陷导致晶片上的系统缺陷。

公开(公告)号：US07646906B2

公开(公告)日：2010-01-12

申请号：US11048630

申请日：2005-01-31

申请人： Zain K. Saidin ,  Yalin Xiong ,  Lance Glasser ,  Carl Hess ,  Moshe E. Preil

发明人： Zain K. Saidin ,  Yalin Xiong ,  Lance Glasser ,  Carl Hess ,  Moshe E. Preil

IPC分类号： G06K9/00

CPC分类号： G03F1/84 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70533 ,  G03F7/70616 ,  G03F7/7065 ,  G03F7/70666 ,  G06Q30/0206

摘要： Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.

摘要翻译： 提供了用于检测标线设计数据缺陷的计算机实现方法。 一种方法包括生成第一模拟图像，其示出如何使用标线制造工艺将掩模版设计数据印刷在掩模版上。 该方法还包括使用第一模拟图像生成第二模拟图像。 第二模拟图像示出了在晶片印刷过程的一个或多个参数的不同值下如何将掩模版印刷在晶片上。 该方法还包括使用第二模拟图像检测掩模版设计数据中的缺陷。 除了确定作为不同值的函数的第二模拟图像的特性的变化率之外，另一种方法包括上述生成步骤。 该方法还包括基于变化率检测掩模版设计数据中的缺陷。

公开(公告)号：US5563702A

公开(公告)日：1996-10-08

申请号：US274310

申请日：1994-07-13

申请人： David G. Emery ,  Zain K. Saidin ,  Mark J. Wihl ,  Tao-Yi Fu ,  Marek Zywno ,  Damon F. Kvamme ,  Michael E. Fein

发明人： David G. Emery ,  Zain K. Saidin ,  Mark J. Wihl ,  Tao-Yi Fu ,  Marek Zywno ,  Damon F. Kvamme ,  Michael E. Fein

IPC分类号： G01B11/30 ,  G01N21/88 ,  G01N21/93 ,  G01N21/94 ,  G01N21/956 ,  G03F1/00 ,  H01L21/027 ,  H01L21/66

CPC分类号： G03F1/84 ,  G01N21/95607 ,  G01N2021/95676

摘要： A method and apparatus for inspecting patterned transmissive substrates, such as photomasks, for unwanted particles and features occurring on the transmissive, opaque portions and at the transition regions of the opaque and transmissive portions of the substrate. A transmissive substrate is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and reflected light collection optics and detectors collect and generate signals representative of the light transmitted and reflected by the substrate as the substrate is scanned repeatedly in one axis in a serpentine pattern by a laser beam which is focused on the patterned substrate surface. The defect identification of the substrate is performed using only those transmitted and reflected light signals, and other signals derived from them, such as the second derivative of each of them. The actual defect identification is then performed by comparing combinations of at least two of those measured and derived signals. Simultaneously, defect and particle inspection using the same measured transmitted and reflected light signals. Additionally, phase shift and line widths on the substrate can also be performed simultaneously using the same transmitted light signal that is collected for defect analysis.

摘要翻译： 一种用于检查图案化的透射基底（例如光掩模）用于不期望的颗粒和特征的方法和装置，其出现在基底的不透明部分和透射部分的透射性不透明部分和过渡区域上。 透射基板由激光器通过包括激光扫描系统，单独的透射和反射光收集光学器件的光学系统照射，并且检测器收集并产生代表由衬底透射和反射的光的信号，因为衬底被一次扫描 通过聚焦在图案化衬底表面上的激光束以蛇形图案。 仅使用透射和反射光信号以及从它们得到的其他信号（例如它们的二次导数）来执行衬底的缺陷识别。 然后通过比较这些测量和导出的信号中的至少两个的组合来执行实际的缺陷识别。 同时，使用相同测量的透射和反射光信号进行缺陷和粒子检测。 此外，基板上的相移和线宽也可以使用用于缺陷分析收集的相同的透射光信号同时进行。