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    Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control
    1.
    发明授权
    Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control 失效
    用于实时，原位端点检测和闭环蚀刻过程控制的方法和装置

    公开(公告)号：US5392124A

    公开(公告)日：1995-02-21

    申请号：US169876

    申请日：1993-12-17

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Ulrich Hofer ,  Leping Li ,  Victor J. Silvestri

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Ulrich Hofer ,  Leping Li ,  Victor J. Silvestri

    IPC分类号： G01B11/06 ,  G01N21/00 ,  G01N21/45 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

    CPC分类号： G01B11/0683

    摘要： A method and apparatus for detecting an etching endpoint of a film on a substrate whereby a first excitation beam of light having a prescribed wavelength is provided, the first light beam substantially containing only a first harmonic component of light at that wavelength. The first light beam is directed at a prescribed incident angle to an interface between the film and the substrate, the first light beam being reflected off the interface to thereby provide a second light beam, the second light beam containing the first harmonic component of the first light beam and a generated second harmonic component. The generated second harmonic component is detected and a first output signal representative thereof is provided. A generated second harmonic component reference of the first light beam is produced and a second output signal representative of a generated second harmonic component reference is provided. The detected second harmonic component of the first light beam is normalized, as a function of the first and second output signals, in real-time, and a third output signal representative of an occurrence of a prescribed change in the normalized detected second harmonic component is provided. The prescribed change corresponds to the etching endpoint of the film on the substrate.

    摘要翻译： 一种用于检测基板上的膜的蚀刻端点的方法和装置，由此提供具有规定波长的第一激发光束，所述第一光束基本上仅包含该波长的光的一次谐波分量。 第一光束以规定的入射角度指向膜和衬底之间的界面，第一光束从界面反射，从而提供第二光束，第二光束包含第一光束的第一谐波分量 光束和产生的二次谐波分量。 检测所产生的二次谐波分量，并提供代表其的第一输出信号。 产生第一光束的产生的二次谐波分量基准，并且提供表示产生的二次谐波分量基准的第二输出信号。 第一光束的检测到的二次谐波分量被实时地归一化为第一和第二输出信号的函数，并且表示归一化检测的二次谐波分量中的规定变化的发生的第三输出信号是 提供。 规定的变化对应于衬底上的膜的蚀刻终点。

    In situ, non-destructive CVD surface monitor
    2.
    发明授权
    In situ, non-destructive CVD surface monitor 失效
    原位，无损CVD表面监测

    公开(公告)号：US5386121A

    公开(公告)日：1995-01-31

    申请号：US173314

    申请日：1993-12-23

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Leping Li ,  Victor J. Silvestri

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Leping Li ,  Victor J. Silvestri

    IPC分类号： C23C16/52 ,  G01N21/55 ,  G01N21/09

    CPC分类号： C23C16/52 ,  G01N21/552

    摘要： A non-intrusive, in-situ monitoring technique and apparatus is used for evaluating the presence and extent of a critical contaminating or passivating layer on a transparent sample, prior to a subsequent process step. A multiple internal reflection apparatus and method without the need for aligning mirrors reduces the time to maximize the light intensity through the sample and to the detector and eliminates the intensity loss due to reflection from each mirror. The technique and apparatus can be used to monitor for a critical hydrogen passivation layer so that it is maintained on the silicon surface right up to the point at which the reactants are introduced for the deposition. The in-situ monitoring and process control technique uses Fourier Transform Infrared Spectroscopy with Multiple Internal Reflections (FTIRS-MIR) which looks at the Si--H bond vibration. Apparatus implementing the technique provides a means of insuring reproducibility in films through direct monitoring of the passivating layer. The technique can be utilized in UHV Chemical Vapor Deposition (CVD) Low Pressure CVD (LPCVD), mid-pressure and atmospheric Chemical Vapor Deposition (CVD) systems. The technique provides a powerful experimental technique for correlating imposed experimental conditions with the presence or destruction of the passivation and the subsequent film quality obtained. The method is applicable to any portion of the electromagnetic spectrum for which the sample is transparent and internally reflecting with the absorption of energy at the sample's surface attributable to any species of interest that can be detected.

    摘要翻译： 在随后的处理步骤之前，使用非侵入式原位监测技术和装置来评估透明样品上临界污染或钝化层的存在和程度。 不需要对准反射镜的多重内反射装置和方法减少了通过样品和检测器使光强度最大化的时间，并消除了由于每个反射镜的反射引起的强度损失。 该技术和装置可用于监测临界氢钝化层，使得其保持在硅表面上直到引入反应物用于沉积的点。 原位监测和过程控制技术使用具有多重内部反射（FTIRS-MIR）的傅里叶变换红外光谱，其观察Si-H键振动。 实施该技术的装置提供了通过直接监测钝化层来确保膜再现性的方法。 该技术可用于特高压化学气相沉积（CVD）低压CVD（LPCVD），中压和大气化学气相沉积（CVD）系统。 该技术提供了强大的实验技术，用于将施加的实验条件与钝化的存在或破坏以及获得的随后的膜质量相关联。 该方法适用于电磁谱的任何部分，其中样品是透明的并且内部反射，其中能够在样品表面处吸收可归因于可以检测的任何感兴趣的物质。

    Method and apparatus for real-time film surface detection for large area wafers
    3.
    发明授权
    Method and apparatus for real-time film surface detection for large area wafers 失效
    用于大面积晶圆实时膜表面检测的方法和装置

    公开(公告)号：US5381234A

    公开(公告)日：1995-01-10

    申请号：US173390

    申请日：1993-12-23

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Richard J. Lebel ,  Leping Li ,  Victor J. Silvestri

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Richard J. Lebel ,  Leping Li ,  Victor J. Silvestri

    IPC分类号： G01N21/21 ,  G01N21/35 ,  G01N21/55 ,  G01N21/94 ,  G01J4/00

    CPC分类号： G01N21/552 ,  G01N2021/3595 ,  G01N21/21 ,  G01N21/94

    摘要： A method and apparatus for measuring with monolayer sensitivity in real-time the condition of a sample, includes a device for producing a modulated and collimated, p-polarized excitation light beam, a device for directing the p-polarized beam to a surface of the sample such that an angle of incidence of the p-polarized light beam with respect to the normal of the surface is at the Brewster angle, first and second reflecting devices between which the sample is positioned, a mechanism for adjusting a distance between the first and second reflecting devices to adjust a number of interactions of the p-polarized excitation light beam with the sample surfaces, and a detector for detecting the p-polarized light beam output intensity distribution with respect to frequency front the sample surfaces. The reflecting devices and the sample are adjustably maintained parallel to one another to thereby maintain the Brewster angle of the input excitation light beam with respect to the normal of the sample surface. As a result, loss of light intensity due to reflections at the sample surfaces is minimized, interference or noise can be minimized, and a high signal-to-noise ratio is achieved. With the structure and method of the invention, a real time non-destructive device and method for the detection of species on the sample surface are provided which enable the determination of a critical endpoint with monolayer resolution and the presence (or absence) of impurities detrimental to the process yield in a fabrication process. The obtained real-time information of the surface condition can be used to control the wafer processing control devices, thereby achieving closed-loop wafer process control.

    摘要翻译： 用于实时测量样品状态的单层灵敏度的方法和装置包括用于产生调制和准直的p偏振激发光束的装置，用于将p偏振光束引导到 样品，使得p偏振光束相对于表面法线的入射角处于布鲁斯特角度，样品所在的第一和第二反射装置，用于调节第一和第二反射装置之间的距离的机构 用于调节p偏振激发光束与样本表面的多个相互作用的第二反射装置，以及用于检测相对于样品表面前方的频率的p偏振光束输出强度分布的检测器。 反射装置和样品彼此平行地可调节地保持，从而保持输入激发光束的布鲁斯特角相对于样品表面的法线。 结果，由于样品表面处的反射导致的光强度的损失最小化，可以使干扰或噪声最小化，并且实现高的信噪比。 利用本发明的结构和方法，提供了用于检测样品表面上的物质的实时非破坏性装置和方法，其能够用单层分辨率确定临界终点，并且存在（或不存在）杂质有害 在制造过程中的工艺产量。 获得的表面状态的实时信息可以用于控制晶片处理控制装置，从而实现闭环晶片工艺控制。

    Interferometer for in situ measurement of thin film thickness changes
    4.
    发明授权
    Interferometer for in situ measurement of thin film thickness changes 失效
    干涉仪用于原位测量薄膜厚度变化

    公开(公告)号：US5220405A

    公开(公告)日：1993-06-15

    申请号：US811506

    申请日：1991-12-20

    申请人： Steven G. Barbee ,  Leping Li ,  Victor J. Silvestri

    发明人： Steven G. Barbee ,  Leping Li ,  Victor J. Silvestri

    IPC分类号： G01B9/02 ,  G01B11/00 ,  G01B11/06 ,  H01L21/306 ,  H01L21/66 ,  H01S3/00

    CPC分类号： G01B11/0675

    摘要： An interferometer 10 for measuring the position of the process surface 21 of a substrate 20 includes a coherent light source 12 for providing a light beam 14 which is partially transmitted and partially reflected by a beam splitter 16. The reflected light beam 18 is reflected off of the process surface 21 and the transmitted light beam 30 is reflected off of a translator 32 which vibrates a predetermined distance at a predetermined frequency. The phase shift between the light beams 22, 31 reflected off of translator 32 and the process surface 21 is measured using a photodetector 24, which provides an output signal 26 to a feedback servo unit 28. The servo unit 28 provides an output signal 38 which controls the vibration of translator 32. The output signal 38 of servo unit 28 is also indicative of the position of the process surface 21.

    摘要翻译： 用于测量衬底20的处理表面21的位置的干涉仪10包括相干光源12，用于提供被分束器16部分透射和部分反射的光束14.反射光束18被反射离开 处理表面21和透射光束30从以预定频率振动预定距离的平移器32反射。 使用光电检测器24测量从平移器32和处理表面21反射的光束22,31之间的相移，光电检测器24向反馈伺服单元28提供输出信号26.伺服单元28提供输出信号38， 控制转换器32的振动。伺服单元28的输出信号38也指示处理表面21的位置。

    Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
    6.
    发明授权
    Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process 失效
    用于无接触实时原位监测化学蚀刻工艺的方法和装置

    公开(公告)号：US5456788A

    公开(公告)日：1995-10-10

    申请号：US414404

    申请日：1995-03-31

    申请人： Steven G. Barbee ,  Madhav Datta ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff ,  Ravindra V. Shenoy

    发明人： Steven G. Barbee ,  Madhav Datta ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff ,  Ravindra V. Shenoy

    IPC分类号： H01L21/66 ,  H01L21/306 ,  H01L21/3213 ,  C23F1/02

    CPC分类号： H01L21/32135

    摘要： A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base member; providing at least two sensors disposed on the base member to be proximate to but not in contact with the outer perimeter of the workpiece surface; and monitoring an electrical characteristic between said at least two sensors, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.

    摘要翻译： 公开了一种用于在用湿化学蚀刻剂蚀刻工件期间蚀刻工艺的原位化学蚀刻监测的非接触式方法和装置。 该方法包括提供具有参考表面的基底构件的步骤; 将工件可释放地固定到基座构件上; 提供设置在所述基座构件上的至少两个传感器以接近但不与所述工件表面的外周接触; 以及监测所述至少两个传感器之间的电特性，其中电特性的规定变化表示蚀刻处理的规定条件。

    Minimizing overetch during a chemical etching process
    7.
    发明授权
    Minimizing overetch during a chemical etching process 失效
    在化学蚀刻过程中最小化过蚀刻

    公开(公告)号：US5501766A

    公开(公告)日：1996-03-26

    申请号：US269864

    申请日：1994-06-30

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    IPC分类号： G01N27/02 ,  G01N27/46 ,  H01L21/00

    CPC分类号： G01N27/02

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

    摘要翻译： 公开了一种用于实时地原位监测化学蚀刻工艺的非接触式方法和装置，以使湿化学蚀刻剂浴中的至少一个晶片的过蚀刻最小化。 该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小值和最大值的时间以确定过蚀值。 将过蚀刻值与期望值进行比较以控制蚀刻工艺。 这种方法及其装置在湿化学蚀刻站中特别有用。

    Measuring film etching uniformity during a chemical etching process
    8.
    发明授权
    Measuring film etching uniformity during a chemical etching process 失效
    在化学蚀刻过程中测量膜蚀刻均匀性

    公开(公告)号：US5489361A

    公开(公告)日：1996-02-06

    申请号：US354567

    申请日：1994-12-13

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin W. Wong

    IPC分类号： G01N29/34 ,  G01N29/42 ,  G03F7/30 ,  H01L21/66 ,  H01L21/00

    CPC分类号： B24B37/013 ,  G01N29/348 ,  G01N29/42 ,  G03F7/3028 ,  H01L22/26 ,  G01N2291/0231 ,  G01N2291/2694 ,  H01L2924/0002

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

    摘要翻译： 公开了一种用于在湿式化学蚀刻剂浴中蚀刻至少一个晶片期间对化学蚀刻工艺进行实时原位监测的非接触式方法和装置。 该方法包括以下步骤：在湿化学浴中提供两个导电电极，其中两个电极接近但不与晶片接触; 在所述至少一个晶片的蚀刻液浴中监测所述两个电极之间的电特性作为时间的函数，其中所述电特性的规定变化表示所述蚀刻工艺的规定条件; 检测蚀刻期间的电特性的最小值和最大值; 确定最小和最大值的时间; 并比较最小和最大值的时间以确定膜蚀刻均匀度值。 这种方法及其装置在湿化学蚀刻站中特别有用，并且可用于膜沉积工艺质量控制。

    Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint
    9.
    发明授权
    Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint 失效
    用于无源晶片约束的湿化学蚀刻的原位非接触监测的夹具

    公开(公告)号：US5451289A

    公开(公告)日：1995-09-19

    申请号：US269859

    申请日：1994-06-30

    申请人： Steven G. Barbee ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff

    发明人： Steven G. Barbee ,  Tony F. Heinz ,  Leping Li ,  Eugene H. Ratzlaff

    IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/673 ,  H01L21/687 ,  H01L21/306

    CPC分类号： H01L21/67313 ,  B24B37/013 ,  H01L21/67086 ,  H01L21/67253 ,  H01L22/26 ,  H01L2924/0002

    摘要： A fixture for in-situ chemical etch monitoring of an etching process during etching of at least one wafer contained in a wafer carrier is disclosed. The fixture comprises a set of primary guide members for engaging and guiding a front portion of the wafer carrier. A set of rear guide members engages and guides a rear portion of the wafer carrier. A set of electrode arms is included for receiving a respective electrode and corresponding electrode wire thereon. A mounting plate establishes a prescribed spacing of the set of primary guide members with respect to the set of electrode arms. A means for self-locking the first wafer contained in the wafer boat is connected to the mounting plate and further positioned in a prescribed manner with respect to the set of primary guide members and the set of electrode arms. Lastly, a connecting means connects the mounting plate, the set of primary guide members, and the set of electrode arms to the set of rear guide members, whereby insertion of the wafer boat into the fixture establishes a prescribed distance between the set of electrode arms and the first wafer, and further wherein the first wafer is passively fixed by the self-locking means.

    摘要翻译： 公开了一种用于在蚀刻包含在晶片载体中的至少一个晶片的蚀刻过程中进行原位化学蚀刻监测的夹具。 夹具包括一组用于接合和引导晶片载体的前部的主导向构件。 一组后引导构件接合并引导晶片载体的后部。 包括一组电极臂用于在其上接收相应的电极和相应的电极线。 安装板相对于一组电极臂确定一组主导向构件的规定间隔。 用于自锁所述晶片舟皿中包含的第一晶片的装置被连接到所述安装板，并且相对于所述一组主引导构件和所述一组电极臂以规定的方式进一步定位。 最后，连接装置将安装板，一组主引导构件和一组电极臂连接到一组后引导构件，由此将晶片舟皿插入固定装置中在该组电极臂之间建立规定的距离 和所述第一晶片，并且其中所述第一晶片被所述自锁装置被动地固定。