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    Open-loop method and system for controlling growth of semiconductor crystal
    1.
    发明授权
    Open-loop method and system for controlling growth of semiconductor crystal 失效
    用于控制半导体晶体生长的开环方法和系统

    公开(公告)号：US5968263A

    公开(公告)日：1999-10-19

    申请号：US53164

    申请日：1998-04-01

    申请人： Sunil Grover ,  Steven L. Kimbel

    发明人： Sunil Grover ,  Steven L. Kimbel

    IPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22

    CPC分类号： C30B15/22 ,  C30B15/14 ,  C30B15/20

    摘要： An open loop control method for use with an apparatus for growing a silicon single crystal having a zero dislocation state and an improved diameter and growth rate uniformity in accordance with the Czochralski process. According to the invention, a heat and mass transfer model based on the silicon charged to a crucible is determined as a function of one or more reference parameters. The reference parameter values are determined from the growth of a reference silicon single crystal. A power profile is then determined as a function of the heat and mass transfer model for a given pull rate profile and model diameter profile. The power profile generated is representative of the power supplied to a heater for providing an amount of thermal energy to the crucible for substantially maintaining a thermal equilibrium at the interface between the melt and the crystal. Finally, the crystal growing apparatus is controlled during the growth of at least a portion of the silicon single crystal by adjusting the thermal energy provided to the crucible by the heater in accordance with the power profile.

    摘要翻译： 一种开环控制方法，用于根据切克劳斯基法生长具有零位错状态和改善的直径和生长速率均匀性的单晶硅的装置。 根据本发明，基于装载到坩埚的硅的热和质量传递模型被确定为一个或多个参考参数的函数。 参考参数值由参考硅单晶的生长确定。 然后根据给定的拉力曲线和模型直径轮廓的热和质量传递模型确定功率分布。 生成的功率曲线代表供应给加热器的功率，以向坩埚提供一定量的热能，以基本上保持熔体和晶体之间的界面处的热平衡。 最后，通过根据功率曲线调节由加热器提供给坩埚的热能，在至少部分硅单晶生长期间控制晶体生长装置。

    Method for rotating a crucible of a crystal pulling machine
    2.
    发明授权
    Method for rotating a crucible of a crystal pulling machine 失效
    用于旋转晶体拉制机的坩埚的方法

    公开(公告)号：US5766341A

    公开(公告)日：1998-06-16

    申请号：US725861

    申请日：1996-10-04

    申请人： Steven L. Kimbel ,  Harold W. Korb ,  Cynthia F. Hall

    发明人： Steven L. Kimbel ,  Harold W. Korb ,  Cynthia F. Hall

    IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B15/20

    CPC分类号： C30B29/06 ,  C30B15/30 ,  Y10T117/1004 ,  Y10T117/1032

    摘要： Apparatus and methods for pulling a semiconductor crystal according to a Czochralski method are disclosed. The apparatus includes a crucible containing a melt, a crystal pulling mechanism which pulls the semiconductor crystal from the melt, a motor coupled to the crucible, and a control circuit for energizing the motor to rotate the crucible at a variable speed. The control circuit may energize the motor to rotate the crucible at a continuously varying acceleration and continuously varying rotational speed while the crystal pulling mechanism is pulling at least a portion of the semiconductor crystal from the melt in the crucible. The control circuit may also energize the motor to rotate the crucible at a rotational speed which monotonically increases and decreases. A method for pulling a semiconductor crystal is also disclosed which includes the steps of performing a Fourier analysis on a periodic signal for variably rotating a crucible; generating a sine wave which corresponds to a fundamental Fourier frequency of the periodic signal; and energizing the crucible motor to rotate the crucible at a rotational speed which increases and decreases as a function of the generated sine wave. Other apparatus and methods for pulling crystals with the CZ method to achieve a desired oxygen concentration and gradient are also disclosed.

    摘要翻译： 公开了根据切克劳斯基（Czochralski）法拉制半导体晶体的装置和方法。 该装置包括一个含有熔体的坩埚，一个从熔体中拉出半导体晶体的晶体拉动机构，一个耦合到该坩埚的马达，以及一个控制电路，用于给马达提供能量，以便以可变的速度转动坩埚。 当晶体拉动机构从坩埚中的熔体中拉出半导体晶体的至少一部分时，控制电路可以激励电动机以连续变化的加速度和连续变化的转速旋转坩埚。 控制电路还可以给电动机供电以使其以单调增加和减小的转速旋转坩埚。 还公开了一种用于拉制半导体晶体的方法，其包括以下步骤：对用于可变地旋转坩埚的周期信号执行傅立叶分析; 产生对应于周期信号的基本傅立叶频率的正弦波; 并且使得坩埚电动机以使产生的正弦波的函数的增加和减小的转速旋转坩埚。 还公开了用CZ方法提取晶体以达到期望的氧浓度和梯度的其它装置和方法。

    Methods and systems for grain size evaluation of multi-cystalline solar wafers
    3.
    发明授权
    Methods and systems for grain size evaluation of multi-cystalline solar wafers 有权
    多晶硅太阳能晶圆粒度评估方法与系统

    公开(公告)号：US09136185B2

    公开(公告)日：2015-09-15

    申请号：US13329914

    申请日：2011-12-19

    申请人： Gang Shi ,  Thomas E. Doane ,  Steven L. Kimbel ,  Robert H. Fuerhoff

    发明人： Gang Shi ,  Thomas E. Doane ,  Steven L. Kimbel ,  Robert H. Fuerhoff

    IPC分类号： G06K9/00 ,  G06K9/40 ,  G06K9/32 ,  H01L21/66 ,  G01N21/95 ,  G01N21/88

    CPC分类号： H01L22/12 ,  G01N21/8806 ,  G01N21/9501 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.

    摘要翻译： 公开了用于评估晶片的方法和系统。 一个示例性方法包括根据多个照明参数照射多晶片，捕获多晶片的多个图像，堆叠和投影多个图像以生成合成图像，分析合成图像以识别一个 或多晶粒，并且基于合成图像的分析生成报告。 根据多个图像中的至少两个中的多个照明参数中的不同的照明参数照亮多晶片。

    Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
    7.
    发明授权
    Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth 有权
    控制半导体晶体的生长自动从锥形生长转变为目标直径生长的方法

    公开(公告)号：US06203611B1

    公开(公告)日：2001-03-20

    申请号：US09421187

    申请日：1999-10-19

    申请人： Steven L. Kimbel ,  Robert R. Wyand, III

    发明人： Steven L. Kimbel ,  Robert R. Wyand, III

    IPC分类号： C30B1526

    CPC分类号： C30B15/20 ,  C30B15/26 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： A control method for use with a Czochralski crystal puller. The method includes pulling the growing crystal from the melt at a first target pull rate to grow a taper portion of the crystal and measuring the crystal diameter of the taper. The method also includes estimating a slope of the diameter as a function of a change in crystal diameter relative to time and the first target pull rate. The method further includes predicting a crystal diameter Di at which to initiate body growth from the taper as a function of the estimated slope. By increasing the pull rate to a second target pull rate when the measured crystal diameter reaches the predicted crystal diameter Di, the method controls growth of the crystal for transitioning from taper growth to body growth. The method also determines the second target pull rate as a function of the estimated slope when using a predefined diameter Di at which to initiate growth of the crystal body.

    摘要翻译： 一种用于Czochralski晶体拉拔器的控制方法。 该方法包括以第一目标拉伸速率从熔体中拉伸生长的晶体，以生长晶体的锥形部分并测量锥形的晶体直径。 该方法还包括估计作为晶体直径相对于时间的变化和第一目标拉伸速率的函数的直径的斜率。 该方法还包括根据估计的斜率预测从锥度开始身体生长的晶体直径Di。 当测量的晶体直径达到预测的晶体直径Di时，通过将拉伸速率提高到第二目标拉伸速率，该方法控制晶体从锥形增长转变为身体生长的生长。 当使用预定直径Di以引发晶体生长时，该方法还确定第二目标拉拔率作为估计斜率的函数。