Method and system for providing a magnetic tunneling junction using thermally assisted switching
    1.
    发明授权
    Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
    使用热辅助切换提供磁隧道结的方法和系统

    公开(公告)号:US08698259B2

    公开(公告)日:2014-04-15

    申请号:US13332282

    申请日:2011-12-20

    IPC分类号: H01L27/22

    摘要: A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

    摘要翻译: 描述了磁连接。 磁结包括钉扎层,非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的,并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面,自由层包括与铁磁层交织的钉扎层,具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING
    2.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING 有权
    使用热辅助开关提供磁性隧道接头的方法和系统

    公开(公告)号:US20130154035A1

    公开(公告)日:2013-06-20

    申请号:US13332282

    申请日:2011-12-20

    摘要: A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

    摘要翻译: 描述了磁连接。 磁结包括钉扎层,非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的,并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面,自由层包括与铁磁层交织的钉扎层,具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE 有权
    提供使用偏置结构进行精密切换配置的磁连接的方法和系统

    公开(公告)号:US20120319221A1

    公开(公告)日:2012-12-20

    申请号:US13495830

    申请日:2012-06-13

    IPC分类号: H01L27/22 H01L43/12 H01L43/02

    摘要: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

    摘要翻译: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层,第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时,自由层可在多个稳定磁状态之间切换。

    Method and system for providing a magnetic junction configured for precessional switching using a bias structure
    6.
    发明授权
    Method and system for providing a magnetic junction configured for precessional switching using a bias structure 有权
    用于提供使用偏置结构配置为进动切换的磁结的方法和系统

    公开(公告)号:US09142758B2

    公开(公告)日:2015-09-22

    申请号:US13495830

    申请日:2012-06-13

    IPC分类号: G11C11/16 H01L43/08 H01L27/22

    摘要: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

    摘要翻译: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层,第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时,自由层可在多个稳定磁状态之间切换。

    Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
    9.
    发明授权
    Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权
    用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统

    公开(公告)号:US08704319B2

    公开(公告)日:2014-04-22

    申请号:US13332328

    申请日:2011-12-20

    IPC分类号: H01L29/82

    摘要: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层,非磁性间隔层,自由层和至少一个阻尼减小层。 自由层具有固有阻尼常数。 非磁性间隔层位于被钉扎层和自由层之间。 所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。 磁结被配置为使得当写入电流通过磁结时,自由层可在多个稳定磁状态之间切换。

    Method and system for providing magnetic junctions having improved characteristics
    10.
    发明授权
    Method and system for providing magnetic junctions having improved characteristics 有权
    提供具有改进特性的磁结的方法和系统

    公开(公告)号:US08710602B2

    公开(公告)日:2014-04-29

    申请号:US13332305

    申请日:2011-12-20

    IPC分类号: H01L43/08

    摘要: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

    摘要翻译: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层,非磁性间隔层,自由层,至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面,绝缘层包括氧化镁,氧化铝,氧化钽,氧化钌,氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。